IRHE9230

PD - 91804D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9230 100K Rads (Si) IRHE93230 300K Rads (Si) RDS(on) 0.80 Ω 0.80 Ω ID -4.0A -4.0A IRHE9230 200V, P-CHANNEL REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY QPL Part Number JANSR2N7390U JANSF2N7390U International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. LCC - 18 Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current Œ Repetitive Avalanche Energy Œ Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -4.0 -2.4 -16 25 0.2 ±20 171 -4.0 2.5 -27 -55 to 150 300 ( for 5s) 0.42 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 3/1/00 IRHE9230 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units — -0.25 — — — — — — — — — — — — — — — 6.1 — — 0.80 0.92 -4.0 — -25 -250 -100 100 45 10 25 30 30 75 65 — V V/°C Ω V S( ) µA Ω Test Conditions VGS =0 V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -2.4A „ VGS = -12V, ID = -4.0A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -2.4A „ VDS= -160V,VGS=0V VDS = -160V VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = -4.0A VDS = -50V VDD = -100V, ID = -4.0A, RG = 7.5Ω BVDSS Drain-to-Source Breakdown Voltage -200 ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source — On-State Resistance — VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 2.5 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 190 45 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Œ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -4.0 -16 -5.0 400 1.6 Test Conditions A V nS µC Tj = 25°C, IS = -4.0A, VGS = 0V  Tj = 25°C, IF = -4.0A, di/dt ≥ -100A/µs VDD ≤ -25V  Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJPCB Junction-to-Case Junction-to-PC Board Min Typ Max Units — — — 19 5.0 — °C/W Test Conditions Solder to a copper clad PC Board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHE9230 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ‘ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage  Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source  On-State Resistance (TO-3) Static Drain-to-Source  On-State Resistance (LCC-18) Diode Forward Voltage  100K Rads(Si)1 300K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V V GS = 20 V VDS=-160V, VGS =0V VGS = -12V, ID =-2.4A VGS = -12V, ID =-2.4A VGS = 0V, IS = -4.0A Min -200 - 2.0 — — — — — — Max — - 4.0 -100 100 -25 ??? 0.80 -5.0 Min -200 -2.0 — — — — — — Max — -5.0 -100 100 -25 ??? 0.80 -5.0 1. Part number IRHE9230 (JANSR2N7390U) 2. Part number IRHE93230 (JANSF2N7390U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 Range VDS(V) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 -200 -200 -200 -200 — 39 -200 -200 -160 -75 — -250 -200 VDS -150 -100 -50 0 0 5 10 VGS 15 20 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHE9230 Pre-Irradiation 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 10 10 -5.0V -5.0V 1 1 10 20µs PULSE WIDTH TJ = 25 °C 100 1 1 10 20µs PULSE WIDTH TJ = 150 °C 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -4.0A -I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C 10 1.5 TJ = 150 ° C 1.0 0.5 1 5.0 V DS = -50V 20µs PULSE WIDTH 5.5 6.0 6.5 7.0 7.5 8.0 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHE9230 2000 1600 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = -4.0A VDS = -160V VDS = -100V VDS = -40V 16 C, Capacitance (pF) C iss 1200 12 800 8 400 C oss Crss 4 0 1 10 100 0 0 10 20 30 FOR TEST CIRCUIT SEE FIGURE 13 40 50 60 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) -ID , Drain Current (A) I 10us 10 100us 10 TJ = 150 ° C 1ms 1 10ms 1 TJ = 25 ° C TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 0.1 0.5 V GS = 0 V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1000 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHE9230 Pre-Irradiation 4.0 V DS VGS RD D.U.T. + -ID , Drain Current (A) -12V 2.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 1.0 td(on) tr t d(off) tf VGS 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - 3.0 RG V DD Pre-Irradiation IRHE9230 VDS L 400 EAS , Single Pulse Avalanche Energy (mJ) RG D .U .T IA S VD D A D R IV E R ID -1.8A -2.5A BOTTOM -4.0A TOP -20V -12V 300 tp 0.0 1Ω 200 15V Fig 12a. Unclamped Inductive Test Circuit 100 IAS 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF -12V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - VDS 7 IRHE9230 Pre-Irradiation Footnotes: Œ Repetitive Rating; Pulse width limited by maximum junction temperature.  VDD = -25V, starting TJ = 25°C, L= 21.4mH Peak IL = -4.0A, VGS = -12V Ž ISD ≤ -4.0A, di/dt ≤ -150A/µs, VDD ≤ -200V, TJ ≤ 150°C  Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ‘ Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — LCC-18 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 3/00 8 www.irf.com