IRHF53034

PD - 93791D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number IRHF57034 IRHF53034 IRHF54034 Radiation Level RDS(on) 100K Rads (Si) 0.048Ω 300K Rads (Si) 0.048Ω 500K Rads (Si) 0.048Ω 0.060Ω IRHF57034 JANSR2N7492T2 60V, N-CHANNEL REF: MIL-PRF-19500/701 5 TECHNOLOGY ™ ID QPL Part Number 12A* JANSR2N7492T2 12A* JANSF2N7492T2 12A* JANSG2N7492T2 12A* JANSH2N7492T2 IRHF58034 1000K Rads (Si) International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-39 Features: n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 12* 9.5 48 25 0.2 ±20 270 12 2.5 9.6 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 ( 0.063 in./1.6mm from case for 10s) 0.98 (Typical) g www.irf.com 1 04/27/06 IRHF57034, JANSR2N7492T2 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 — — 2.0 12 — — — — — — — — — — — — Typ Max Units — 0.062 — — — — — — — — — — — — — — 7.0 — — 0.048 4.0 — 10 25 100 -100 40 10 15 25 100 35 30 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, I D = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 9.5A à VDS = VGS, ID = 1.0mA VDS >= 15V, IDS = 9.5A à VDS= 48V ,VGS=0V VDS = 48V, V GS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, I D = 12A VDS = 30V VDD = 30V, ID = 12A VGS =12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1160 530 18 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 12* 48 1.5 100 300 Test Conditions A V ns nC Tj = 25°C, IS = 12A, VGS = 0V à Tj = 25°C, IF = 12A, di/dt ≤100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 5.0 175 Units °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHF57034, JANSR2N7492T2 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (TO-39) Diode Forward Voltage à Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 60 2.0 — — — — — — — 4.0 100 -100 10 0.034 0.048 1.5 60 1.5 — — — — — — — 4.0 100 -100 25 0.043 0.060 1.5 V nA µA Ω Ω V Test Conditions V GS = 0V, I D = 1.0mA V GS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS= 48V, VGS =0V VGS = 12V, I D = 9.5A VGS = 12V, ID = 9.5A VGS = 0V, IS = 12A 1. Part numbers IRHF57034 (JANSR2N7492T2), IRHF53034 (JANSF2N7492T2) and IRHF54034 (JANSG2N7492T2) 2. Part number IRHF58034 (JANSH2N7492T2) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br Xe Au LET (MeV/(mg/cm2)) 37.3 63 86.6 Energy (MeV) 285 300 2068 VDS (V) Range (µm) @VGS =0V @VGS= -5V @V GS= -10V @VGS=-15V @VGS=-20V 36.8 60 60 60 60 40 29 46 46 35 25 15 106 35 35 27 20 14 70 60 50 40 30 20 10 0 0 -5 -10 VGS -15 -20 Br I Au For footnotes refer to the last page www.irf.com VDS Fig a. Single Event Effect, Safe Operating Area 3 IRHF57034, JANSR2N7492T2 Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 10 5.0V 1 5.0V 1 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 TJ = 25 ° C 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 12A I D , Drain-to-Source Current (A) 2.0 1.5 TJ = 150 ° C 1.0 10 0.5 1 5 7 9 V DS = 15 25V 20µs PULSE WIDTH 11 13 15 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHF57034, JANSR2N7492T2 2500 2000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 12A VDS = 48V VDS = 30V VDS = 12V 16 C, Capacitance (pF) 1500 12 Ciss 1000 Coss 8 500 4 Crss 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 10 TJ = 150 ° C 100µs 10 1ms 1 TJ = 25 ° C 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 Tc = 25°C Tj = 150°C Single Pulse 1 1 10 10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHF57034, JANSR2N7492T2 Pre-Irradiation 16 LIMITED BY PACKAGE VDS VGS RD I D , Drain Current (A) 12 RG D.U.T. + -V DD VGS 8 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHF57034, JANSR2N7492T2 600 EAS , Single Pulse Avalanche Energy (mJ) TOP 500 15V BOTTOM ID 5.4A 7.6A 12A VDS L DRIVER 400 RG D.U.T. IAS 300 + - VDD A VGS 20V tp 0.01Ω 200 Fig 12a. Unclamped Inductive Test Circuit 100 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHF57034, JANSR2N7492T2 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 3.74mH Peak IL = 12A, VGS = 12V  I SD ≤ 12A, di/dt ≤ 244A/ µs, VDD ≤ 60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006 8 www.irf.com