IRHF58130

PD - 93789A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF57130 100K Rads (Si) IRHF53130 300K Rads (Si) IRHF54130 IRHF58130 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.08Ω 0.08Ω 0.08Ω 0.10Ω ID 11.7A 11.7A 11.7A 11.7A IRHF57130 100V, N-CHANNEL R5 TECHNOLOGY ™ TO-39 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current Œ Repetitive Avalanche Energy Œ Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 11.7 7.4 47 25 0.2 ±20 173 11.7 2.5 4.9 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063 in./1.6mm from case for 10s) 0.98 (Typical) g www.irf.com 1 3/2/00 IRHF57130 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — 2.0 8.7 — — — — — — — — — — — — Typ Max Units — 0.12 — — — — — — — — — — — — — — 7.0 — — 0.08 4.0 — 10 25 100 -100 50 7.4 20 25 100 35 30 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 7.4A  VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.4A  VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 11.7A VDS = 50V VDD = 50V, ID = 11.7A RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1038 362 45 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Œ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 11.7 47 1.5 202 982 Test Conditions A V ns µC Tj = 25°C, IS = 11.7A, VGS = 0V  Tj = 25°C, IF = 11.7A, di/dt ≥ 100A/µs VDD ≤ 25V  Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 5.0 175 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHF57130 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ‘ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage  Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source  On-State Resistance (TO-3) Static Drain-to-Source  On-State Resistance (TO-39) Diode Forward Voltage  Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 100 2.0 — — — — — — — 4.0 100 -100 10 0.064 0.08 1.5 100 1.5 — — — — — — — 4.0 100 -100 10 0.08 0.10 1.5 V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 80V, VGS =0V VGS = 12V, ID =7.4A VGS = 12V, ID =7.4A VGS = 0V, IS = 11.7A 1. Part numbers IRHF57130, IRHF53130 and IRHF54130 2. Part number IRHF58130 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 100 100 100 100 100 32.5 100 100 100 35 25 28.4 100 100 80 25 — 120 100 80 VGS 60 40 20 0 0 -5 -10 VDS -15 -20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHF57130 Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 10 10 5.0V 5.0V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 1 20µs PULSE WIDTH TJ = 150 °C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 TJ = 25 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 11.7A I D , Drain-to-Source Current (A) 2.0 100 TJ = 150 ° C 1.5 1.0 10 0.5 1 5 7 9 V DS = 15 50V 20µs PULSE WIDTH 11 13 15 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHF57130 2000 1600 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 11.7A 16 VDS = 80V VDS = 50V VDS = 20V C, Capacitance (pF) 1200 Ciss 12 800 Coss 8 400 4 Crss 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 TJ = 25 ° C ISD , Reverse Drain Current (A) 10 ID, Drain Current (A) TJ = 150 ° C 100 OPERATION IN THIS AREA LIMITED BY RDS(ON) 10 1 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10ms 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHF57130 Pre-Irradiation 12 VDS VGS RG RD 10 D.U.T. + I D , Drain Current (A) 8 -VDD 12V 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit VDS 90% 2 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHF57130 400 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 320 ID 5.2A 7.4A BOTTOM 11.7A TOP VD S L D R IV E R 240 RG D .U .T. IA S + - VD D A 160 12V 20V tp 0 .0 1 Ω 80 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHF57130 Pre-Irradiation Footnotes: Œ Repetitive Rating; Pulse width limited by maximum junction temperature.  VDD = 50V, starting TJ = 25°C, L= 2.53 mH Peak IL = 11.7A, VGS = 12V Ž ISD ≤ 11.7A, di/dt ≤ 216A/µs, VDD ≤ 100V, TJ ≤ 150°C  Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ‘ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 3/00 8 www.irf.com