IRHF593130

PD-96963 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF597130 100K Rads (Si) IRHF593130 300K Rads (Si) RDS(on) ID 0.24Ω -6.7A 0.24Ω -6.7A IRHF597130 100V, P-CHANNEL 5 TECHNOLOGY ™ TO-39 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC=25°C ID @ VGS = -12V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -6.7 -4.3 -26.8 25 0.2 ±20 240 -6.7 2.5 -17 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063 in./1.6 mm from case for 10s) 0.98 (Typical ) g www.irf.com 1 09/26/05 IRHF597130 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Min -100 Typ Max Units — -0.13 — — — — — — — — — — — — — — 7.0 — — 0.24 -4.0 — -10 -25 -100 100 40 16 11 25 50 45 125 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -4.3A à VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -4.3A à VDS = -80V ,VGS = 0V VDS = -80V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS =-12V, ID = -6.7A VDS = -50V VDD = -50V, ID = -6.7A VGS =-12V, RG = 7.5Ω ∆BV DSS /∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 4.3 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 1250 318 28 8.0 — — — — pF Ω VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -6.7 -26.8 -5.0 150 408 Test Conditions A V ns nC T j = 25°C, IS = -6.7A, VGS = 0V à Tj = 25°C, IF = -6.7A, di/dt ≤ -100A/µs VDD ≤ -50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 5.0 175 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHF597130 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance(TO-39) Diode Forward Voltage à 100K Rads(Si)1 Min Max -100 -2.0 — — — — — — — -4.0 -100 100 -10 0.205 0.24 -5.0 300KRads(Si)2 Min Max -100 -2.0 — — — — — — — -4.0 -100 100 -10 0.205 0.24 -5.0 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA V GS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS = -80V, VGS =0V VGS = -12V, ID = -4.3A VGS = -12V, ID = -4.3A VGS = 0V, IS = -6.7A 1. Part number IRHF597130 2. Part number IRHF593130 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 Energy (MeV) 252.6 314 350 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V 33.1 -100 -100 -100 -100 -100 -100 30.5 -100 -100 -100 -100 -75 -25 28.4 -100 -100 -100 -30 — — -120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 25 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHF597130 Pre-Irradiation 100 -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 10 10 -5.0V -5.0V 1 1 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -6.7A 2.0 -I D, Drain-to-Source Current (A) T J = 25°C T J = 150°C 10 1.5 1.0 VDS = -25V 15 60µs PULSE WIDTH 1 5 6 7 8 9 10 -VGS, Gate-to-Source Voltage (V) VGS = -12V 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHF597130 2000 -VGS, Gate-to-Source Voltage (V) 1600 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = -6.7A 16 VDS= -80V VDS= -50V VDS= -20V C, Capacitance (pF) 1200 Ciss 12 800 Coss 8 400 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 5 10 15 20 25 30 35 40 0 1 Crss 10 100 -VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -I SD , Reverse Drain Current (A) 10 TJ = 150°C -ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 1 00µs 1ms T J = 25°C 1 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 10ms VGS = 0V 0.1 0 1 2 3 4 5 6 7 -V SD , Source-to-Drain Voltage (V) 0.1 100 1000 -V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHF597130 Pre-Irradiation 7 6 -I D, Drain Current (A) V GS RG V GS V DS RD D.U.T. + 4 3 2 1 0 25 50 75 100 125 150 90% Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% T C , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 1 0.01 0.00001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - 5 V DD Pre-Irradiation IRHF597130 VDS L 600 EAS , Single Pulse Avalanche Energy (mJ) RG D.U.T IAS + DRIVER V DD VDD A 500 VGS -20V tp 0.01Ω ID -3.0A -4.2A BOTTOM -6.7A TOP 400 300 15V 200 Fig 12a. Unclamped Inductive Test Circuit I AS 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - -12 V -12V 12V .2µF .3µF QGS QGD VDS 7 IRHF597130 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -25V, starting TJ = 25°C, L =10.6mH Peak IL = -6.7A, VGS = -12V  ISD ≤ -6.7A, di/dt ≤ -530A/ µs, VDD ≤ -100V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-205AF(Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/05 8 www.irf.com