IRHF597110

PD - 94176C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF597110 100K Rads (Si) IRHF593110 300K Rads (Si) RDS(on) 1.0Ω 1.0Ω ID -2.6A -2.6A IRHF597110 100V, P-CHANNEL 4#  TECHNOLOGY c TO-39 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -2.6 -1.6 -10.4 15 0.12 ±20 30 -2.6 1.5 6.6 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063 in./1.6mm from case for 10s) 0.98 (Typical) g www.irf.com 1 12/03/03 IRHF597110 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -100 — — — -2.0 1.3 — — — — — — — — — — — — Typ Max Units — -0.13 — — — — — — — — — — — — — — — 7.0 — — 1.2 1.0 -4.0 — -10 -25 -100 100 11 3.0 4.0 20 20 30 95 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -2.6A ➃ VGS = -12V, ID = -1.6A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -1.6A ➃ VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -2.6A VDS = -50V VDD = -50V, ID = -2.6A VGS =-12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 370 100 7.0 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -2.6 -10.4 -5.0 100 250 Test Conditions A V ns nC Tj = 25°C, IS = -2.6A, VGS = 0V ➃ Tj = 25°C, IF = -2.6A, di/dt ≤−100A/µs VDD ≤ -25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 8.3 175 Units °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHF597110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Diode Forward Voltage ➃ 100K Rads(Si)1 Min Max -100 -2.0 — — — — — — -4.0 -100 100 -10 0.916 -5.0 300K Rads (Si)2 Units Min Max -100 — -2.0 -5.0 — -100 — 100 — -10 — 0.916 — -5.0 V nA µA Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -80V, VGS =0V VGS = -12V, ID =-1.6A VGS = 0V, IS = -2.6A 1. Part number IRHF597110 2. Part number IRHF593110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br I LET MeV/(mg/cm2) 28.0 36.8 59.8 Energy (MeV) 285 305 343 Range (µm) @VGS=0V @VGS=5V 43.0 -100 -100 39.0 -100 -100 32.6 -60 — VDS (V) @ VGS=10V @VGS=15V -100 -70 -70 - 50 — — @VGS=20V -60 -40 — -120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHF597110 Pre-Irradiation 10 -I D , Drain-to-Source Current (A) -5.0V -I D , Drain-to-Source Current (A)  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 10  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -5.0V 1 1 0.1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 0.1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -2.6A  -I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C  10 1.5 TJ = 150 ° C  1.0 0.5 1 5 6 7 8 15  V DS = -50V 20µs PULSE WIDTH 9 10 11 0.0 -60 -40 -20 VGS = -12V  0 20 40 60 80 100 120 140 160 -VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHF597110 600 500 -VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID  = -2.6A 16  VDS = -80V VDS = -50V VDS = -20V C, Capacitance (pF) 400 Ciss  12 300 8 200 C oss 100 4 C rss 0 1 10 100 0 0 2 4  FOR TEST CIRCUIT SEE FIGURE 13 8 10 6 12 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) -I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 10 TJ = 150 ° C  1 TJ = 25 ° C  1 Tc = 25°C Tj = 150°C Single Pulse 1 10 1ms 10ms 100 1000 0.1 0.0 V GS = 0 V  1.0 2.0 3.0 4.0 5.0 0.1 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHF597110 Pre-Irradiation 3.0 VDS VGS RG RD 2.5 D.U.T. + -ID , Drain Current (A) 2.0 1.5 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 0.5 VGS 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 1  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1  PDM t1 t2 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - V DD Pre-Irradiation IRHF597110 VDS L 60 EAS , Single Pulse Avalanche Energy (mJ) RG D .U .T IA S D R IV E R 0 .0 1 Ω VD D A 50 -2 0 V VGS  ID -1.2A -1.6A BOTTOM -2.6A TOP tp 40 30 15V 20 Fig 12a. Unclamped Inductive Test Circuit 10 IAS 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V ( BR ) DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF -12V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - VDS 7 IRHF597110 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD =-25V, starting TJ = 25°C, L= 8.9 mH Peak IL = -2.6A, VGS = -12V ➂ ISD ≤ -2.6A, di/dt ≤ -120A/µs, VDD ≤ -100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/03 8 www.irf.com