IRHG3214

PD - 91711B RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level IRHG7214 100K Rads (Si) IRHG3214 300K Rads (Si) IRHG4214 600K Rads (Si) IRHG8214 1000K Rads (Si) R DS(on) 2.25Ω 2.25Ω 2.25Ω 2.25Ω IRHG7214 250V,QUAD N-CHANNEL RAD Hard HEXFET TECHNOLOGY HEXFET TECHNOLOGY ™ ® ID 0.5A 0.5A 0.5A 0.5A MO-036AB International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Absolute Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 0.5 0.3 2.0 1.4 0.011 ±20 75 — — 5.5 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (1.6mm from case for 10s) 1.5 (Typical ) g www.irf.com 1 8/14/01 IRHG7214 Pre-Irradiation @ Tjj = 25°C (Unless Otherwise Specified) T Min Typ Max Units — 0.29 — — — — — — — — — — — — — — — 10 — — 2.25 2.4 4.0 — 25 250 100 -100 15 2.5 4.5 20 25 50 50 — V V/°C Ω V S( ) µA Ω Electrical Characteristics Parameter Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 0.3A ➃ VGS = 12V, ID = 0.5A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 0.3A ➃ VDS= 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 0.5A VDS = 125V VDD =125V, ID = 0.5A VGS =12V, RG = 7.5Ω BVDSS Drain-to-Source Breakdown Voltage 250 ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance — VGS(th) Gate Threshold Voltage 2.0 g fs Forward Transconductance 0.47 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Measur ed from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from Package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 280 67 16 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 0.5 2.0 1.7 250 370 Test Conditions A V nS µC Tj = 25°C, IS = 0.5A, VGS = 0V ➃ Tj = 25°C, IF = 0.5A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 17 90 °C/W Test Conditions Soldered to a Copper clad PB board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHG7214 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter Min Min 250 2.0 — — — — — — 100K Rads(Si) Max 300 - 1000K Rads (Si) Min Max Units V nA µA Ω Ω V Test Conditions Test BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" ➃ On-State Resistance (TO-3) Static Drain-to-Source" ➃ On-State Resistance (MO-036AB) Diode Forward Voltage" ➃ — 4.0 100 -100 25 2.25 2.25 1.70 250 1.25 — — — — — — — 4.5 100 -100 50 3.0 3.0 1.70 VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=200V, VGS =0V VGS = 12V, ID =0.3A VGS = 12V, ID =0.3A VGS = 0V, IS = 0.5A 1. Part numbers IRHG7214 2. Part number IRHG3214, IRHG4214 and IRHG8214 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET Energy MeV/(mg/cm )) (MeV) 28.0 285 36.8 305 Range VDS(V) (µm) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V @VGS=-20V 43 250 250 250 250 250 39 250 250 250 225 210 300 250 200 150 100 50 0 0 -5 -10 VGS -15 -20 Cu Br VDS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHG7214 Pre-Irradiation 10 10 I D , Drain-to-Source Current (A) 1 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 4.5V 0.1 4.5V 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.5 I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150° C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 0.5A 2.0 1.5 1 1.0 0.5 0.1 V DS = 50V 20µs PULSE WIDTH 4 6 8 10 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHG7214 600 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 0.5A 16 V DS= 200V V DS= 125V V DS= 50V C, Capacitance (pF) 400 Ciss 12 200 Coss Crss 8 4 0 0 FOR TEST CIRCUIT SEE FIGURE 13 0 3 6 10 13 16 1 10 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 10 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100us 1 1ms 1 TJ = 150 ° C 10ms 0.1 TJ = 25 ° C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 0.01 TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHG7214 Pre-Irradiation 0.6 VDS VGS RG RD 0.5 D.U.T. + ID , Drain Current (A) 0.4 -VDD VGS 0.3 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.2 Fig 10a. Switching Time Test Circuit VDS 90% 0.1 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJC ) 10 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHG7214 EAS , Single Pulse Avalanche Energy (mJ) 200 15V 150 ID 0.22A 0.32A BOTTOM 0.5A TOP VDS L DRIVER 100 RG D.U.T IAS tp + - VDD A V/5 20V 0.01Ω 50 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V(BR)DSS tp Starting T , Junction Temperature( °C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHG7214 Pre-Irradiation Foot Notes: F oot ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L=600mH Peak IL = 0.5A, VGS =12V ➂ ISD ≤ 0.5A, di/dt ≤ 150A/µs, VDD ≤ 250V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. Total 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with V DS Bias. T otal 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — MO-036AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 08/01 8 www.irf.com