IRHG9110

PD - 93819B IRHG9110 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) IRHG9110 100K Rads (Si) 1.1Ω IRHG93110 300K Rads (Si) 1.1Ω ID -0.75A -0.75A 100V, QUAD P-CHANNEL RAD-Hard HEXFET ™ ® MOSFET TECHNOLOGY MO-036AB International Rectifier’s RAD-Hard MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TM HEXFET® Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -0.75 -0.5 -3.0 1.4 0.011 ±20 75 -0.75 0.14 2.4 ➂ -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g 300 (0.63in./1.6mm from case for 10s) 1.3 (Typical) www.irf.com 1 02/20/03 IRHG9110 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -100 — — — -2.0 0.6 — — — — — — — — — — — — Typ Max Units — -0.11 — — — — — — — — — — — — — — — 10 — — 1.2 1.1 -4.0 — -25 -250 -100 100 15 4.0 4.3 22 19 66 51 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -0.75A➃ VGS = -12V, ID =- 0.5A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -0.5A ➃ VDS= -80V, VGS= 0V VDS = -80V, VGS = 0V, TJ =125°C VGS = - 20V VGS = 20V VGS = -12V, ID = -0.75A, VDS = -50V VDD = -50V, ID = -0.75A, VGS = -12V, RG = 24Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 335 100 22 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics (Per Die) Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -0.75 -3.0 -2.5 90 257 Test Conditions A V nS nC Tj = 25°C, IS = -0.75A, VGS = 0V ➃ Tj = 25°C, IF = -0.75A, di/dt ≥ -100A/µs VDD ≤ -25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 17 90 Units °C/W Test Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHG9110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ (Per Die) Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Static Drain-to-Source ➃ On-State Resistance (MO-036AB) Diode Forward Voltage ➃ 100K Rads(Si)1 300K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS =-80V, VGS =0V VGS = -12V, ID =-0.5A VGS = -12V, ID =-0.5A VGS = 0V, IS = -0.75A Min -100 - 2.0 — — — — — — Max — - 4.0 -100 100 -25 1.06 1.1 -2.5 Min -100 -2.0 — — — — — — Max — -5.0 -100 100 -25 1.06 1.1 -2.5 1. Part number IRHG9110 2. Part number IRHG93110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area (Per Die) Ion Cu Br I LET MeV/(mg/cm 2)) 28.0 36.8 59.8 Energy (MeV) 285 305 343 Range (µm) @VGS=0V @VGS=5V 43.0 -100 -100 39.0 -100 -100 32.6 -60 — VDS (V) @VGS=10V -100 -70 — @V GS=15V -70 -50 — @VGS=20V -60 -40 — -120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHG9110 Pre-Irradiation 100 -I D , Drain-to-Source Current (A) 10 -I D, Drain-to-Source Current (A)  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 100 10  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -5.0V 1 -5.0V 1 0.1 0.1 0.01 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 0.01 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -0.75A  -I D , Drain-to-Source Current (A) 2.5 TJ = 25 ° C  10 2.0 1.5 TJ  = 150 ° C 1.0 0.5 1 5 7 9  V DS = -50V 20µs PULSE WIDTH 11 13 15 0.0 -60 -40 -20 VGS = -12V  0 20 40 60 80 100 120 140 160 -VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHG9110 600 500 -VGS , Gate-to-Source Voltage (V)  VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = -0.75A  16 C, Capacitance (pF)  VDS = -80V VDS = -50V VDS = -20V 400 Ciss  300 12 8 200 C oss C rss 100 4 0 1 10 100 0 0 2 4 6  FOR TEST CIRCUIT SEE FIGURE 13 8 10 12 14 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 10 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on) 10 TJ = 150 ° C  -I D , Drain Current (A) I  1ms 1 TJ = 25 ° C  1  10ms 0.1 0.0 V GS = 0 V  1.0 2.0 3.0 4.0 5.0 0.1  TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 1000 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHG9110 Pre-Irradiation 0.8 V DS VGS RD 0.6 D.U.T. + -I D , Drain Current (A) 0.5 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.3 Fig 10a. Switching Time Test Circuit 0.2 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 0.01 1  SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 10 100 0.1 1 1000  P DM t1 t2 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com - RG V DD Pre-Irradiation IRHG9110 VDS L 200 EAS , Single Pulse Avalanche Energy (mJ) RG D .U .T. IA S D R IV E R 0 .0 1 Ω VD D A 160 VGS -2 0 V  ID -0.34A -0.47A BOTTOM -0.75A TOP tp 120 15V 80 Fig 12a. Unclamped Inductive Test Circuit 40 IAS 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V ( BR ) DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF -12V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - VDS 7 IRHG9110 Pre-Irradiation ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = - 25V, starting TJ = 25°C, L= 267mH, Peak IL = - 0.75A, VGS = -12V ➂ ISD ≤ - 0.75A, di/dt ≤ - 132A/µs, VDD ≤ -100V, TJ ≤ 150°C ➅ Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions — MO-036AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 8 www.irf.com