IRHLA7670Z4

PD-97251 2N7633M2 IRHLA7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE (14-LEAD FLAT PACK) Product Summary Part Number IRHLA7670Z4 IRHLA7630Z4 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.60Ω 1.36Ω 0.60Ω 1.36Ω ID 0.8A -0.56A 0.8A -0.56A CHANNEL N P N P 14-Lead Flat Pack International Rectifier’s R7TM L ogic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n n 5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings (Per Die) Parameter ID@ VGS = ±4.5V, TC= 25°C ID@ VGS = ±4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page Pre-Irradiation N-Channel 0.8 0.5 3.2 0.6 0.005 ±10 16 Á 0.8 0.06 10.2  -55 to 150 oC P-Channel -0.56 -0.35 -2.24 0.6 0.005 Units A W W/°C ±10 26 ² -0.56 0.06 -5.79 ³ V mJ A mJ V/ns 300 (0.63 in./1.6 mm from case for 10s) 0.52 (Typical) g www.irf.com 1 03/17/08 IRHLA7670Z4, 2N7633M2 Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Pre-Irradiation Min 60 — — 1.0 — 0.23 — — — — — — — — — — — — Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified) Typ Max Units — 0.067 — — -4.7 — — — — — — — — — — — — 20 — — 0.60 2.0 — — 1.0 10 100 -100 2.8 0.6 1.6 6.5 2.5 35 13 — V V/°C Ω V mV/°C S µA nA nC Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 0.5A VDS = VGS, ID = 250µA VDS = 10V, IDS = 0.5A à VDS = 48V ,VGS = 0V VDS = 48V, VGS = 0V, TJ =125°C VGS = 10V VGS = -10V VGS = 4.5V, ID = 0.8A VDS = 30V VDD = 30V, ID = 0.8A, VGS = 5.0V, RG = 24Ω à IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance ns nH Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad C iss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — — 141 38 1.4 8.0 — — — — pF Ω VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics (Per Die) Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 0.8 3.2 1.2 55 63 Test Conditions A V ns nC Tj = 25°C, IS = 0.8A, VGS = 0V à Tj = 25°C, IF = 0.8A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 210 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHLA7670Z4, 2N7633M2 Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Min -60 Typ Max Units — -0.063 — — 3.2 — — — — — — — — — — — — 20 — — 1.36 V V/°C Ω Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = -4.5V, ID = -0.35A VDS = VGS, ID = -250µA VDS = -10V, IDS = -0.35A à VDS = -48V ,VGS = 0V VDS = -48V, VGS = 0V, TJ =125°C VGS = -10V VGS = 10V VGS = -4.5V, ID = -0.56A VDS = -30V VDD = -30V, ID = -0.56A, VGS = -5.0V, RG = 24Ω à ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -1.0 — ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 0.7 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — -2.0 V — mV/°C — S -1.0 -10 µA -100 100 2.8 1.7 1.2 22 22 40 32 — nA nC ns nH Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad C iss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — — 144 41 6.6 55 — — — — pF Ω VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics (Per Die) Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -0.56 -2.24 -5.0 35 9.6 Test Conditions A V ns nC Tj = 25°C, IS = -0.56A, VGS = 0V à Tj = 25°C, IF = -0.56A, di/dt ≤ -100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 210 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page www.irf.com 3 IRHLA7670Z4, 2N7633M2 Radiation Characteristics Pre-Irradiation International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-39) Static Drain-to-Source On-state „ Resistance (14-Lead Flat Pack) Diode Forward Voltage „ Up to 300K Rads (Si)1 Min 60 1.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA VGS = 10V VGS = -10V VDS= 48V, VGS= 0V VGS = 4.5V, ID = 0.5A VGS = 4.5V, ID = 0.5A VGS = 0V, ID = 0.8A — 2.0 100 -100 1.0 0.60 0.60 1.2 1. Part numbers IRHLA7670Z4, IRHLA7630Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) Ion LET (MeV/(mg/cm )) Br I Au 37 60 84 2 Energy (MeV) 305 370 390 Range (µm) 39 34 30 0V 60 60 60 -2V 60 60 60 -4V 60 60 60 -5V 60 60 60 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= -6V 60 60 - -7V 35 20 - -8V 30 15 - -10V 20 - 70 60 50 40 30 20 10 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 VGS Br I Au Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page 4 VDS www.irf.com Radiation Characteristics Pre-Irradiation IRHLA7670Z4, 2N7633M2 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-39) Static Drain-to-Source On-state „ Resistance (14-Lead Flat Pack) Diode Forward Voltage„ Up to 300K Rads (Si)1 Min -60 -1.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -250µA VGS = VDS, ID = -250µA VGS = -10V VGS = 10V VDS= -48V, VGS= 0V VGS = -4.5V, ID = -0.35A VGS = -4.5V, ID = -0.35A VGS = 0V, ID = -0.56A — -2.0 -100 100 -1.0 1.25 1.36 -5.0 1. Part numbers IRHLA7670Z4, IRHLA7630Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) Ion LET (MeV/(mg/cm )) Br I Au 37 60 84 2 Energy Range (MeV) 305 370 390 (µm) 39 34 30 0V -60 -60 -60 2V -60 -60 -60 4V -60 -60 -60 5V -60 -60 -60 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 6V -60 -60 - 7V -50 -20 - 8V -35 - 10V -25 - -70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 VGS 6 7 8 9 10 Br I Au Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com VDS 5 IRHLA7670Z4, 2N7633M2 N-Channel Q1, Q3 10 VGS TOP 10V 5.0V 4.5V 3.5V 3.0V 2.5V 2.25V BOTTOM 2.0V Pre-Irradiation 10 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.5V 2.25V BOTTOM 2.0V TOP 1 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1 0.1 60µs PULSE WIDTH -T j = 25°C 2.0V 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 2.0V 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 T J = 150°C 1 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 0.8A 1.5 ID, Drain-to-Source Current (A) T J = 25°C 0.1 VDS = 25V 60µs PULSE WIDTH 0.01 2 2.5 3 3.5 4 VGS, Gate-to-Source Voltage (V) 1.0 0.5 VGS = 4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 6 www.irf.com Pre-Irradiation N-Channel Q1,Q3 ID = 0.8A 2.5 2.0 1.5 1.0 0.5 T J = 25°C 0 2 3 4 5 6 7 8 9 10 11 12 T J = 150°C IRHLA7670Z4, 2N7633M2 RDS(on), Drain-to -Source On Resistance ( Ω) RDS(on), Drain-to -Source On Resistance (Ω) 3.0 1.1 1.0 0.9 0.8 0.7 T J = 25°C 0.6 0.5 Vgs = 4.5V 0.4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ID, Drain Current (A) T J = 150°C VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 80 3.5 VGS(th) Gate threshold Voltage (V) ID = 1.0mA 3.0 2.5 2.0 1.5 1.0 0.5 0.0 70 60 ID ID ID ID = 50µA = 250µA = 1.0mA = 150mA 0 20 40 60 80 100 120 140 160 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 7 IRHLA7670Z4, 2N7633M2 N-Channel Q1,Q3 280 240 200 160 120 80 40 0 1 10 100 VGS = 0V, f = 1 MHz C iss = C gs + Cgd, C ds SHORTED C rss = C gd C oss = Cds + Cgd Pre-Irradiation 12 ID = 0.8A VGS, Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 0.5 1 1.5 VDS = 48V VDS = 30V VDS = 12V C, Capacitance (pF) Ciss Coss Crss FOR TEST CIRCUIT SEE FIGURE 17 2 2.5 3 3.5 4 4.5 5 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage 10 Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 0.8 ISD, Reverse Drain Current (A) T J = 150°C 1 T J = 25°C ID, Drain Current (A) 1.6 0.6 0.4 0.2 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V) 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Typical Source-to-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature 8 www.irf.com Pre-Irradiation N-Channel Q1,Q3 10 EAS , Single Pulse Avalanche Energy (mJ) 40 IRHLA7670Z4, 2N7633M2 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 32 TOP BOTTOM ID 0.36A 0.51A 0.80A 100 µs 1 24 16 1ms Tc = 25°C Tj = 150°C Single Pulse 1 10 VDS , Drain-to-Source Voltage (V) 8 10ms 100 0.1 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 1000 Thermal Response ( Z thJA ) 100 D = 0.50 0.20 0.10 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 10 0.05 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 10 100 1000 1 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 9 IRHLA7670Z4, 2N7633M2 N-Channel Q1,Q3 Pre-Irradiation V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V . D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. Fig 16a. Unclamped Inductive Test Circuit 4.5V QG 12V .2µF 50KΩ .3µF QGS VG QGD VGS 3mA D.U.T. + V - DS Charge Fig 17a. Basic Gate Charge Waveform VDS VGS RG V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % IG ID Current Sampling Resistors Fig 17b. Gate Charge Test Circuit VDS 90% RD D.U.T. VDD + - 10% VGS td(on) tr t d(off) tf Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 10 www.irf.com Pre-Irradiation P-Channel Q2,Q4 10 -I D, Drain-to-Source Current (A) VGS TOP -10V -5.0V -4.5V -3.25V -2.75V -2.5V -2.25V BOTTOM -2.0V IRHLA7670Z4, 2N7633M2 10 TOP -I D, Drain-to-Source Current (A) BOTTOM VGS -10V -5.0V -4.5V -3.25V -2.75V -2.5V -2.25V -2.0V 1 1 -2.0V -2.0V 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 19. Typical Output Characteristics Fig 20. Typical Output Characteristics 10 1.5 T J = 150°C 1 T J = 25°C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -0.56A -I D, Drain-to-Source Current (A) 1.0 VDS = -25V 60µs PULSE WIDTH 0.1 1 1.5 2 2.5 3 -VGS, Gate-to-Source Voltage (V) VGS = -4.5V 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 21. Typical Transfer Characteristics Fig 22. Normalized On-Resistance Vs. Temperature www.irf.com 11 IRHLA7670Z4, 2N7633M2 P-Channel Q2,Q4 RDS(on), Drain-to -Source On Resistance (Ω) Pre-Irradiation 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2 3 4 5 6 7 8 ID = -0.56A RDS(on), Drain-to -Source On Resistance ( Ω) 4.0 2.2 2.0 1.8 1.6 1.4 T J = 25°C 1.2 1.0 Vgs = -4.5V 0.8 0 0.5 1.0 1.5 2.0 2.5 -I D, Drain Current (A) T J = 150°C T J = 150°C T J = 25°C 9 10 11 12 -V GS, Gate -to -Source Voltage (V) Fig 23. Typical On-Resistance Vs Gate Voltage -V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Fig 24. Typical On-Resistance Vs Drain Current 80 2.5 -V GS(th) Gate threshold Voltage (V) ID = -1.0mA 2.0 70 1.5 1.0 60 ID = -50µA 0.5 ID = -250µA ID = -1.0mA ID = -150mA 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 25. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 26. Typical Threshold Voltage Vs Temperature 12 www.irf.com Pre-Irradiation P-Channel Q2,Q4 240 VGS = 0V, f = 1 MHz C iss = C gs + Cgd, C ds SHORTED C rss = C gd C oss = Cds + Cgd IRHLA7670Z4, 2N7633M2 12 ID = -0.56A -V GS, Gate-to-Source Voltage (V) 200 10 8 6 4 2 0 VDS= -48V VDS= -30V VDS= -12V C, Capacitance (pF) 160 Ciss 120 80 Coss 40 Crss 0 1 10 100 FOR TEST CIRCUIT SEE FIGURE 35 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -V DS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 27. Typical Capacitance Vs.Drain-to-Source Voltage Fig 28. Typical Gate Charge Vs. Gate-to-Source Voltage 10 0.6 0.5 -I D, Drain Current (A) 3 -I SD, Reverse Drain Current (A) 0.4 0.3 0.2 0.1 T J = 150°C 1 T J = 25°C VGS = 0V 0.10 0.5 1 1.5 2 2.5 -VSD , Source-to-Drain Voltage (V) 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 29. Typical Source-Drain Diode Forward Voltage Fig 30. Maximum Drain Current Vs. Case Temperature www.irf.com 13 IRHLA7670Z4, 2N7633M2 P-Channel Q2,Q4 10 OPERATION IN THIS AREA LIMITED BY R DS(on) EAS , Single Pulse Avalanche Energy (mJ) 60 Pre-Irradiation -I D, Drain-to-Source Current (A) 50 TOP BOTTOM ID -0.25A -0.35A -0.56A 40 100µs 1 30 20 1ms Tc = 25°C Tj = 150°C Single Pulse 1 10 -V DS , Drain-to-Source Voltage (V) 10ms 100 10 0.1 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 31. Maximum Safe Operating Area Fig 32. Maximum Avalanche Energy Vs. Drain Current 1000 Thermal Response ( Z thJA ) 100 D = 0.50 0.20 0.10 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 10 0.05 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 10 100 1000 1 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 33. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 14 www.irf.com Pre-Irradiation P-Channel Q2,Q4 VDS L IRHLA7670Z4, 2N7633M2 I AS VDD A RG D.U.T. IAS -20V VGS DRIVER 0.01Ω tp tp 15V V(BR)DSS Fig 34a. Unclamped Inductive Test Circuit Fig 34b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -4.5V QG 12V .2µF 50KΩ .3µF VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 35a. Basic Gate Charge Waveform RD V DS VGS Fig 35b. Gate Charge Test Circuit td(on) tr t d(off) VGS D.U.T. V DD 10% VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 36a. Switching Time Test Circuit www.irf.com + - RG 90% VDS Fig 36b. Switching Time Waveforms + D.U.T. - QGS QGD VDS tf 15 IRHLA7670Z4, 2N7633M2 Pre-Irradiation Ä Total Dose Irradiation with VGS Bias. ±10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Å Total Dose Irradiation with VDS Bias. ±48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A ² VDD = -25V, starting TJ = 25°C, L= 166mH, Peak IL = -0.56A, VGS = -10V ³ ISD ≤ -0.56A, di/dt ≤ -161A/µs, VDD ≤ -60V, TJ ≤ 150°C Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 50mH, Peak IL = 0.8A, VGS = 10V  ISD ≤ 0.8A, di/dt ≤ 230A/µs, VDD ≤ 60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — 14 Lead FlatPack LEAD ASSIGNMENT D1 S1 G1 NC G2 S2 D2 Q2 Q3 Q1 Q4 D4 S4 G4 NC G3 S3 D3 LEGEND D = DRAIN, S = SOURCE , G = GATE, NC = NO CONNECTION CHANNELS N Channel = Q1 and Q3, P Channel = Q2 and Q4 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2008 16 www.irf.com