IRHLF630Z4

PD - 94695 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) IRHLF670Z4 100K Rads (Si) 0.5Ω IRHLF630Z4 300K Rads (Si) 0.5Ω IRHLF640Z4 IRHLF680Z4 600K Rads (Si) 1000K Rads (Si) 0.5Ω 0.5Ω ID 1.6A* 1.6A* 1.6A* 1.6A* IRHLF670Z4 60V, N-CHANNEL TECHNOLOGY T0-39 International Rectifier’s R6 TM L ogic Level Power Mosfets provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within accptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLF6970Z4 Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight 1.6* 1.0* 6.4 5.0 0.04 ±10 9.0 1.6 0.5 3.5 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063in/1.6mm from case for 10s) 0.98 (Typical) g * Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF6970Z4 For footnotes refer to the last page www.irf.com 1 07/07/03 IRHLF670Z4 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 — — 1.0 1.1 — — — — — — — — — — — — Typ Max Units — 0.08 — — — — — — — — — — — — — — 7.0 — — 0.50 2.0 — 1.0 10 100 -100 3.6 1.5 1.8 8.0 20 20 15 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 1.0A ➃ IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC VDS = VGS, ID = 250µA VDS = 10V, IDS = 1.0A ➃ VDS= 48V ,VGS= 0V VDS = 48V, VGS = 0V, TJ =125°C VGS = 10V VGS = -10V VGS = 5.0V, ID = 1.6A VDS = 30V VDD = 30V, ID = 1.6A, VGS = 5.0V, RG = 24Ω ns nH Measured from Drain lead (6mm /0.25in from package) to Source lead(6mm/0.25in from packge)with Source wire internally bonded from Source pin to Drain pad C iss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — — 152 39 1.6 14 — — — — pF Ω VGS = 0V, VDS = 25V f = 1.0MHz f = 5.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 1.6* 6.4 1.2 100 150 Test Conditions A V ns nC Tj = 25°C, IS = 1.6A, VGS = 0V ➃ Tj = 25°C, IF = 1.6A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF6970Z4 Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 25 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLF670Z4 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Diode Forward Voltage ➃ Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 60 1.0 — — — — — — 2.0 100 -100 1.0 0.5 1.2 60 1.0 — — — — — — 2.0 100 -100 10 0.5 1.2 V nA µA Ω V Test Conditions VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA VGS = 10V VGS = -10 V VDS= 48V, VGS =0V VGS = 4.5V, ID = 1.0A VGS = 0V, IS = 1.6A 1. Part numbers IRHLF670Z4, IRHLF630Z4 and IRHLF640Z4 2. Part number IRHLF680Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm2)) Br I Au 37.3 59.9 82.3 Energy Range (MeV) 285 345 357 (µm) 36.8 32.7 357 @VGS= VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 0V 60 60 60 -2V 60 60 60 -4V 60 60 60 -5V 60 60 60 -6V 60 60 - -7V 35 20 - -8V 30 15 - -10V 20 - 70 60 50 40 30 20 10 0 0 -2 -4 -6 VGS -8 -10 -12 Br I Au For footnotes refer to the last page www.irf.com VDS Fig a. Single Event Effect, Safe Operating Area 3 IRHLF670Z4 Pre-Irradiation 10 ID, Drain-to-Source Current (A) 1 ID, Drain-to-Source Current (A) VGS 7.5V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.25V TOP 10 VGS 7.5V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.25V TOP 1 2.25V 2.25V 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 T J = 150°C TJ = 25°C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 1.6A  ID, Drain-to-Source Current ( Α ) 1.5 1 1.0 0.5 0 2 2.5 3 VDS = 25V 15 60µ s PULSE WIDTH 3.5 4 4.5 5 0.0 -60 -40 -20 VGS = 4.5V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLF670Z4 250 VGS , Gate-to-Source Voltage (V) 200  VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 12 ID = 1.6A  10  VDS = 48V VDS = 30V VDS = 12V C, Capacitance (pF) Ciss  150 8 C oss 100 6 4 50 C rss 0 1 10 100 2 0 0 1 2  FOR TEST CIRCUIT SEE FIGURE 13 3 4 5 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 10 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current ( Α) ID, Drain-to-Source Current (A) 1 T J = 150°C T J = 25°C 100µs 1 1ms Tc = 25°C Tj = 150°C Single Pulse 1.0 10 0.1 VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD , Source-to-Drain Voltage (V) 0.1 10ms 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHLF670Z4 Pre-Irradiation 3.0 VDS VGS RG RD 2.5 D.U.T. + I D , Drain Current (A) 2.0 -VDD VGS 1.5 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.5 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJC ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHLF670Z4 EAS , Single Pulse Avalanche Energy (mJ) 20 1 5V 16  TOP BOTTOM ID 0.7A 1.0A 1.6A VD S L D R IV E R 12 RG D .U .T. IA S + - VD D A 8 VGS 20V tp 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit 4 0 25 50 75 100 125 150 V (B R )D S S tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 5.0V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHLF670Z4 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 7.0 mH Peak IL = 1.6A, VGS = 12V ➂ ISD ≤ 1.6A, di/dt ≤ 92A/µs, VDD ≤ 60V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/03 8 www.irf.com