IRHLG730Z4

PD-95865 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6Ω 1.07A IRHLG730Z4 300K Rads (Si) 0.6Ω 1.07A IRHLG770Z4 60V, Quad N-CHANNEL TECHNOLOGY ™ MO-036AB International Rectifier’s R7 TM L ogic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Complimentary P-Channel Available IRHLG7970Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 1.07 0.67 4.28 1.0 0.01 ±10 13 1.07 0.1 7.0 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C 300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical) g www.irf.com 1 12/28/06 IRHLG770Z4 Pre-Irradiation Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 — — 1.0 — 0.9 — — — — — — — — — — — — Typ Max Units — 0.08 — — -4.04 — — — — — — — — — — — — 10 — — 0.6 2.0 — — 1.0 10 100 -100 2.5 0.5 1.6 6.0 2.4 34 11 — V V/°C Ω V mV/°C S µA nA nC Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 0.67A VDS = VGS, ID = 250µA VDS = 10V, IDS = 0.67A à VDS= 48V ,VGS= 0V VDS = 48V, VGS = 0V, TJ =125°C VGS = 10V VGS = -10V VGS = 4.5V, ID = 1.07A VDS = 30V VDD = 30V, ID = 1.07A, VGS = 5.0V, RG = 24Ω à IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance ns nH Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — — 162 39 2.1 13.8 — — — — pF Ω VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics (Per Die) Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 1.07 4.28 1.2 51 70 Test Conditions A V ns nC Tj = 25°C, IS = 1.07A, VGS = 0V à Tj = 25°C, IF = 1.07A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 125 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLG770Z4 IRHLG770Z4 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-39) Static Drain-to-Source On-state „ Resistance (MO-036) Diode Forward Voltage „ Up to 300K Rads (Si)1 Min 60 1.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA VGS = 10V VGS = -10V VDS= 48V, VGS= 0V VGS = 4.5V, ID = 0.67A VGS = 4.5V, ID = 0.67A VGS = 0V, ID = 1.07A — 2.0 100 -100 1.0 0.5 0.6 1.2 1. Part numbers IRHLG7670Z4, IRHLG7630Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area (Per Die) Ion LET (MeV/(mg/cm )) Br I Au 37 60 84 2 Energy (MeV) 305 370 390 Range (µm) 39 34 30 0V 60 60 60 -2V 60 60 60 -4V 60 60 60 -5V 60 60 60 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= -6V 60 60 - -7V 35 20 - -8V 30 15 - -10V 20 - 70 60 50 40 30 20 10 0 0 -2 -4 -6 VGS -8 -10 -12 Br I Au For footnotes refer to the last page www.irf.com VDS Fig a. Single Event Effect, Safe Operating Area 3 IRHLG770Z4 Pre-Irradiation 10 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V TOP 10 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V TOP 1 2.5V 1 2.5V 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 1.07A 1.5 ID, Drain-to-Source Current (A) T J = 150°C 1 T J = 25°C 1.0 VDS = 25V 20µs PULSE WIDTH 15 0.1 2 2.5 3 3.5 4 VGS, Gate-to-Source Voltage (V) 0.5 VGS = 4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLG770Z4 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 80 2.5 VGS(th) Gate threshold Voltage (V) ID = 1.0mA 2.0 70 1.5 1.0 60 ID = 50µA ID = 250µA 0.5 ID = 1.0mA ID = 150mA 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 5. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 6. Typical Threshold Voltage Vs Temperature 280 240 200 160 120 80 40 0 1 C oss = C ds + C gd VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd 12 ID = 1.07A 10 8 6 4 2 0 VDS = 48V VDS = 30V VDS = 12V C, Capacitance (pF) Ciss Coss Crss 10 100 FOR TEST CIRCUIT SEE FIGURE 15 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge Vs. Gate-to-Source Voltage www.irf.com 5 IRHLG770Z4 Pre-Irradiation 1.2 1.0 ID, Drain Current (A) 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain-to-Source Current (A) 1 1ms Tc = 25°C Tj = 150°C Single Pulse 1 10 VDS , Drain-to-Source Voltage (V) 10ms 100 0.1 Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Safe Operating Area 1000 Thermal Response ( Z thJA ) 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 10 1 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com Pre-Irradiation IRHLG770Z4 10 32 EAS , Single Pulse Avalanche Energy (mJ) 28 24 20 16 12 8 4 0 ISD, Reverse Drain Current (A) TOP BOTTOM ID 0.48A 0.68A 1.07A 1 T J = 150°C T J = 25°C 0.1 VGS = 0V 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V) 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 12. Typical Source-to-Drain Diode Forward Voltage Fig 13a. Maximum Avalanche Energy Vs. Drain Current V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V . D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 13c. Unclamped Inductive Waveforms Fig 13b. Unclamped Inductive Test Circuit www.irf.com 7 IRHLG770Z4 Pre-Irradiation VDS VGS RG V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VDS 90% D.U.T. . VDD + - 10% VGS td(on) tr t d(off) tf Fig 14a. Switching Time Test Circuit Fig 14b. Switching Time Waveforms Current Regulator Same Type as D.U.T. 4.5V QG QGS QGD 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS VG Charge Fig 15a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 15b. Gate Charge Test Circuit 8 www.irf.com Pre-Irradiation IRHLG770Z4 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 22.5mH Peak IL = 1.07A, VGS = 10V  ISD ≤ 1.07A, di/dt ≤ 214A/µs, VDD ≤ 60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — MO-036AB Q4 Q1 Q3 Q2 Q4 Q1 Q3 Q2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2006 www.irf.com 9