IRHLG7970Z4

PD-97200B 2N7628M1 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) I D IRHLG7970Z4 100K Rads (Si) 1.25Ω -0.71A IRHLG7930Z4 300K Rads (Si) 1.25Ω -0.71A IRHLG7970Z4 60V, Quad P-CHANNEL ™ TECHNOLOGY MO-036AB International Rectifier’s R7 TM L ogic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Complimentary N-Channel Available IRHLG770Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = -4.5V, TC=25°C ID @ VGS = -4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -0.71 -0.45 -2.84 1.0 0.01 ±10 21 -0.71 0.1 -14 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C 300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical) g www.irf.com 1 04/01/08 IRHLG7970Z4, 2N7628M1 Pre-Irradiation Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified) Parameter Min Typ Max Units — -0.08 — — 3.07 — — — — — — — — — — — — 10 — — 1.25 -2.0 — — -1.0 -10 -100 100 2.8 1.7 0.8 17 20 27 23 — V V/°C Ω V mV/°C S µA nA nC Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = -4.5V, ID = -0.45A VDS = VGS, ID = -250µA VDS = -10V, IDS = -0.45A à VDS= -48V ,VGS= 0V VDS = -48V, VGS = 0V, TJ =125°C VGS = -10V VGS = 10V VGS = -4.5V, ID = -0.71A VDS = -30V VDD = -30V, ID = -0.71A, VGS = -5.0V, RG = 24Ω à BVDSS Drain-to-Source Breakdown Voltage -60 ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -1.0 — ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 0.9 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — ns nH Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — — 138 39 6.7 52.4 — — — — pF Ω VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics (Per Die) Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -0.71 -2.84 -5.0 30 11 Test Conditions A V ns nC Tj = 25°C, IS = -0.71A, VGS = 0V à Tj = 25°C, IF = -0.71A, di/dt ≤−100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 125 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLG7970Z4, 2N7628M1 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-39) Static Drain-to-Source On-state „ Resistance (MO-036) Diode Forward Voltage „ Up to 300K Rads (Si)1 Min -60 -1.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -250µA VGS = VDS, ID = -250µA VGS = -10V VGS = 10V VDS= -48V, VGS= 0V VGS = -4.5V, ID = -0.45A VGS = -4.5V, ID = -0.45A VGS = 0V, ID = -0.71A — -2.0 -100 100 -1.0 1.20 1.25 -5.0 1. Part numbers IRHLG7970Z4, IRHLG7930Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) Ion LET (MeV/(mg/cm )) Br I Au 37 60 84 2 Energy Range (MeV) 305 370 390 (µm) 39 34 30 0V -60 -60 -60 2V -60 -60 -60 4V -60 -60 -60 5V -60 -60 -60 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 6V -60 -60 - 7V -50 -20 - 8V -35 - 10V -25 - -70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 VGS 6 7 8 9 10 Br I Au Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com VDS 3 IRHLG7970Z4, 2N7628M1 Pre-Irradiation 10 -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) VGS TOP -10V -5.0V -4.5V -3.0V -2.75V -2.5V -2.25V BOTTOM -2..0V 10 VGS -10V -5.0V -4.5V -3.0V -2.75V -2.5V -2.25V BOTTOM -2..0V TOP 1 1 -2.0V 20µs PULSE WIDTH Tj = 150°C 0.1 -2.0V 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 T J = 25°C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -0.71A -I D, Drain-to-Source Current (A) 1.5 T J = 150°C 1 1.0 VDS = -25V 20µs PULSE WIDTH 15 0.1 2 2.5 3 3.5 -V GS, Gate-to-Source Voltage (V) VGS = -4.5V 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLG7970Z4, 2N7628M1 RDS(on), Drain-to -Source On Resistance (Ω) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2 3 4 5 6 7 8 ID = -0.71A RDS(on), Drain-to -Source On Resistance ( Ω) 4.0 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0.5 1.0 1.5 2.0 2.5 3.0 -I D, Drain Current (A) T J = 25°C T J = 150°C T J = 150°C T J = 25°C Vgs = -4.5V 9 10 11 12 -V GS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current -V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 75 3.0 -V GS(th) Gate threshold Voltage (V) ID = -1.0mA 70 2.5 2.0 65 1.5 1.0 ID = -50µA 60 ID = -250µA 0.5 ID = -1.0mA ID = -150mA -60 -40 -20 0 20 40 60 80 100 120 140 160 55 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5 IRHLG7970Z4, 2N7628M1 Pre-Irradiation 240 200 C rss = C gd C oss = C ds + Cgd -V GS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHz C iss = C gs + Cgd, C ds SHORTED 12 ID = -0.71A 10 8 6 4 2 0 VDS= -48V VDS= -30V VDS= -12V C, Capacitance (pF) 160 Ciss 120 80 Coss 40 C rss 0 1 10 100 FOR TEST CIRCUIT SEE FIGURE 17 0 1 2 3 4 5 6 -VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs.Drain-to-Source Voltage 10 Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 0.8 0.7 -I SD, Reverse Drain Current (A) 1 -I D, Drain Current (A) 3.5 4 T J = 150°C 0.6 0.5 0.4 0.3 0.2 0.1 0 T J = 25°C 0.1 VGS = 0V 0.01 0 0.5 1 1.5 2 2.5 3 -VSD , Source-to-Drain Voltage (V) 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Typical Source-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature 6 www.irf.com Pre-Irradiation IRHLG7970Z4, 2N7628M1 10 50 EAS , Single Pulse Avalanche Energy (mJ) -I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) TOP 40 BOTTOM 30 ID -0.32A -0.45A -0.71A 1 1ms 0.1 10ms Tc = 25°C Tj = 150°C Single Pulse 1 10 -VDS , Drain-to-Source Voltage (V) 100 20 10 0.01 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 1000 Thermal Response ( Z thJA ) 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 10 1 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 7 IRHLG7970Z4, 2N7628M1 Pre-Irradiation VDS L I AS VDD A RG D.U.T. IAS -20V VGS DRIVER 0.01Ω tp tp 15V V(BR)DSS Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -4.5V QG 12V .2µF 50KΩ .3µF VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 17a. Basic Gate Charge Waveform RD V DS VGS Fig 17b. Gate Charge Test Circuit td(on) tr t d(off) VGS D.U.T. V DD 10% VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit 8 + - RG 90% VDS Fig 18b. Switching Time Waveforms www.irf.com + D.U.T. - QGS QGD VDS tf Pre-Irradiation IRHLG7970Z4, 2N7628M1 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -25V, starting TJ = 25°C, L= 85mH Peak IL = -0.71A, VGS = -10V  ISD ≤ -0.71A, di/dt ≤ -164A/µs, VDD ≤ -60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. -10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — MO-036AB Q4 Q1 Q3 Q2 Q4 Q1 Q3 Q2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2008 www.irf.com 9