IRHLNJ797034

PD-97302A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRHLNJ797034 IRHLNJ793034 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.072Ω 0.072Ω ID 22A* 22A* 2N7624U3 IRHLNJ797034 60V, P-CHANNEL TECHNOLOGY ™ SMD-0.5 International Rectifier’s R7 TM L ogic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @VGS = -4.5V,TC = 25°C ID @VGS = -4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page -22* -14.9 -88 57 0.45 ±10 79 -22 5.7 -12.3 -55 to 150 300 (for 5s) 1.0 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C g www.irf.com 1 10/05/10 IRHLNJ797034, 2N7624U3 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -60 — — -1.0 — 16 — — — — — — — — — — — — — — — Typ Max Units — -0.055 — — 3.5 — — — — — — — — — — — — 4.0 2261 583 91 — — 0.072 -2.0 — — -1.0 -10 -100 100 36 10 18 32 250 100 85 — — — — 20 V V/°C Ω V mV/°C S µA nA Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = -4.5V, ID = -14.9A à VDS = VGS, ID = -250µA VDS = -10V, IDS = -14.9A à VDS = -48V ,VGS = 0V VDS = -48V, VGS = 0V, TJ = 125°C VGS = -10V VGS = 10V VGS = -4.5V, ID = -22A VDS = -30V VDD = -30V, ID = -22A, VGS = -5.0V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss Rg Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance nC ns nH pF Ω Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -22* -88 -5.0 110 132 Test Conditions A V ns nC Tj = 25°C, IS = -22A, VGS = 0V à Tj = 25°C, IF = -22A, di/dt ≤ -100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter R thJC Junction-to-Case Min Typ Max Units — — 2.2 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLNJ797034, 2N7624U3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Source On-state „ Resistance (SMD-0.5) Diode Forward Voltage„ Upto 300K Rads (Si)1 Min -60 -1.0 — — — Max Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -250µA VGS = VDS , ID = -250µA VGS = -10V VGS = 10V VDS = -48V, VGS= 0V VGS = -4.5V, ID = -14.9A VGS = -4.5V, ID = -14.9A VGS = 0V, ID = -22A — -2.0 -100 100 -1.0 0.076 0.072 -5.0 — — — 1. Part numbers IRHLNJ797034, IRHLNJ793034 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET (MeV/(mg/cm )) 38 ± 5% 62 ± 5% 85 ± 5% 2 Energy (MeV) 300 ± 7.5% 355 ± 7.5% 380 ± 7.5% Range (µm) 38 ± 7.5% 33 ± 7.5% 29 ± 7.5% @VGS= @VGS= VDS (V) @VGS= @VGS= @VGS= @VGS= 0V -60 -60 -60 2V -60 -60 -60 4V -60 -60 -60 5V -60 -60 -60 6V -60 -60 - 7V -40 - -70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 6 7 Bias VGS (V) Bias VDS (V) LET=38 ± 5% LET=62 ± 5% LET=85 ± 5% Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHLNJ797034, 2N7624U3 Pre-Irradiation 100 -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) VGS TOP -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.3V 100 TOP VGS -10V -5.0V -4.5V -4.0V -3.0V -2.7V -2.5V -2.3V BOTTOM 10 -2.3V 10 -2.3V 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) 20µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 T J = 150°C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -22A 1.5 -I D, Drain-to-Source Current (A) T J = 25°C 10 1.0 0.5 VDS = -25V 60µs PULSE WIDTH 15 1 2 2.5 3 3.5 4 4.5 5 -VGS, Gate-to-Source Voltage (V) VGS = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLNJ797034, 2N7624U3 RDS(on), Drain-to -Source On Resistance (m Ω) 140 120 100 80 60 40 20 0 2 4 6 8 T J = 25°C ID = -22A RDS(on), Drain-to -Source On Resistance ( mΩ) 160 140 130 120 110 100 90 80 70 60 50 40 30 0 10 20 30 40 50 60 70 80 -I D, Drain Current (A) Vgs = -4.5V T J = 25°C T J = 150°C T J = 150°C 10 12 -VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current -V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 75 2.5 -VGS(th) Gate threshold Voltage (V) ID = -1.0mA 70 2.0 1.5 65 1.0 60 0.5 ID = -50µA ID = -250µA ID = -1.0mA ID = -150mA -60 -40 -20 0 20 40 60 80 100 120 140 160 55 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5 IRHLNJ797034, 2N7624U3 Pre-Irradiation 3600 3200 2800 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED 12 -VGS, Gate-to-Source Voltage (V) C rss = C gd 10 8 6 4 2 0 ID = -22A C oss = C ds + C gd VDS = -48V VDS = -30V VDS = -12V C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 1 Ciss Coss Crss 10 100 FOR TEST CIRCUIT SEE FIGURE 17 0 10 20 30 40 50 60 70 80 -VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 25 LIMITED BY PACKAGE -I SD , Reverse Drain Current (A) 20 10 -I D, Drain Current (A) VGS = 0V 4 5 6 T J = 150°C 15 1 T J = 25°C 10 5 0.1 0 1 2 3 -V SD , Source-to-Drain Voltage (V) 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Typical Source-to-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature 6 www.irf.com Pre-Irradiation IRHLNJ797034, 2N7624U3 1000 EAS , Single Pulse Avalanche Energy (mJ) 140 -I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 120 100 80 60 40 20 0 ID -9.8A -13.9A BOTTOM -22A TOP 10 100µ s 1ms 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 10ms 0.1 DC 100 25 50 75 100 125 150 -V DS , Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM t1 0.1 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) t2 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 7 IRHLNJ797034, 2N7624U3 Pre-Irradiation VDS L I AS RG D.U.T IAS + DRIVER V DD VDD A VGS -20V tp 0.01Ω 15V tp V(BR)DSS Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -4.5V QGS VG QG QGD 50KΩ -12V 12V .2µF .3µF VGS -3mA Charge IG ID Current Sampling Resistors Fig 17a. Basic Gate Charge Waveform Fig 17b. Gate Charge Test Circuit V DS VGS RG V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD td(on) tr t d(off) tf VGS D.U.T. + 10% V DD 90% VDS Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 www.irf.com + D.U.T. - VDS - Pre-Irradiation IRHLNJ797034, 2N7624U3 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -25V, starting TJ = 25°C, L = 0.32mH Peak IL = -22A, VGS = -10V  ISD ≤ -22A, di/dt ≤ -350A/µs, VDD ≤ -60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. -10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/2010 www.irf.com 9