IRHM3450

PD - 90673B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRHM7450 IRHM3450 IRHM4450 IRHM8450 Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) 1000K Rads (Si) RDS(on) 0.45Ω 0.45Ω 0.45Ω 0.45Ω ID 11A 11A 11A 11A IRHM7450 JANSR2N7270 500V, N-CHANNEL REF: MIL-PRF-19500/603 ® RAD-Hard HEXFET TECHNOLOGY ™ QPL Part Number JANSR2N7270 JANSF2N7270 JANSG2N7270 JANSH2N7270 TO-254AA I nternational Rectifier’s RAD-Hard TM H EXFET ® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 11 7.0 44 150 1.2 ±20 500 11 15 3.5 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063 in. (1.6mm) from case for 10s) 9.3 (Typical) g www.irf.com 05/18/06 1 IRHM7450, JANSR2N7270 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 500 — — — 2.0 4.0 — — — — — — — — — — — — Typ Max Units — 0.6 — — — — — — — — — — — — — — — 8.7 — — 0.45 0.50 4.0 — 50 250 100 -100 150 30 75 45 190 190 130 — V V/°C Ω V S( ) µA Ω Test Conditions VGS =0 V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 7.0A „ VGS = 12V, ID = 11A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.0A „ VDS= 400V,VGS=0V VDS = 400V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 11A VDS = 250V VDD = 250V, ID = 11A, VGS = 12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4000 330 52 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 11 44 1.6 1100 16 Test Conditions A V ns µC Tj = 25°C, IS = 11A, VGS = 0V à Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs VDD ≤ 50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient Min Typ Max — — — — 0.83 0.21 — — 48 Units °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM7450, JANSR2N7270 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage à Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (TO-254AA) Diode Forward Voltage à 100K Rads(Si)1 300 K- 1000K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA V GS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID = 7.0A VGS = 12V, ID = 7.0A VGS = 0V, IS = 11A Min 500 2.0 — — — — — — Max — 4.0 100 -100 50 0.45 0.45 1.6 Min 500 1.25 — — — — — — Max — 4.5 100 -100 50 0.6 0.6 1.6 1. Part number IRHM7450 (JANSR2N7270) 2. Part numbers IRHM3450 (JANSF2N7270), IRHM4450 (JANSG2N7270) and IRHM8450 (JANSH2N7270) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Ni LET (MeV/(mg/cm )) 28 2 Energy (MeV) 265 Range (µm) 41 @ VGS=0V @VGS=-5V VDS (V) @VGS=-10V @VGS=-15V @VGS=-20V 275 275 - - - 400 300 VDS 200 100 0 0 -5 -10 VGS -15 -20 Ni Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM7450, JANSR2N7270 Post-Irradiation Pre-Irradiation Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure 4 www.irf.com Post-Irradiation Pre-Irradiation IRHM7450, JANSR2N7270 Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation Fig 9. High Dose Rate (Gamma Dot) Test Circuit www.irf.com 5 IRHM7450, JANSR2N7270 RadiationPost-Irradiation Characteristics Pre-Irradiation Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc Fig 10. Typical Output Characteristics Pre-Irradiation Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) 6 www.irf.com Radiation Characteristics Pre-Irradiation IRHM7450, JANSR2N7270 Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 400 Vdc Fig 14. Typical Output Characteristics Pre-Irradiation Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) www.irf.com 7 IRHM7450, JANSR2N7270 Pre-Irradiation Fig 18. Typical Output Characteristics Fig 19. Typical Output Characteristics Fig 20. Typical Transfer Characteristics Fig 21. Normalized On-Resistance Vs. Temperature 8 www.irf.com Pre-Irradiation IRHM7450, JANSR2N7270 Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage Fig 25. Maximum Safe Operating Area www.irf.com 9 IRHM7450, JANSR2N7270 Pre-Irradiation VDS V GS RG RD D.U.T. + - VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 27a. Switching Time Test Circuit VDS 90% 10% VGS Fig 26. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 27b. Switching Time Waveforms Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 www.irf.com Pre-Irradiation IRHM7450, JANSR2N7270 15V VDS L DRIVER RG VGS 20V D.U.T IAS tp + - VDD A 0.01Ω Fig 29a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 29c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 29b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 30a. Basic Gate Charge Waveform Fig 30b. Gate Charge Test Circuit www.irf.com 11 IRHM7450, JANSR2N7270 Pre-Irradiation à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 400 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Foot Notes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L ≥ 7.4mH Peak IL = 11A, VGS = 12V  I SD ≤ 11A, di/dt ≤ 140A/µs, VDD ≤ 500V, TJ ≤ 150°C Case Outline and Dimensions — Low-Ohmic TO-254AA 0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B C ##'Ãb$&d !($Ãb$ d '#Ãb""d H6Y 3X 3.81 [.150] 2X 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 3.81 [.150] 127(6 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2006 12 www.irf.com