IRHM7150

PD - 90675C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level Part IRHM7150 100K Rads (Si) IRHM3150 300K Rads (Si) IRHM4150 IRHM8150 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.065Ω 0.065Ω 0.065Ω 0.065Ω REF: MIL-PRF-19500/603 ® RAD Hard ™ HEXFET TECHNOLOGY HEXFET TECHNOLOGY IRHM7150 JANSR2N7268 100V, N-CHANNEL ID 34A 34A 34A 34A QPL Part Number JANSR2N7268 JANSF2N7268 JANSG2N7268 JANSH2N7268 TO-254AA International Rectifier’s RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET® technol- Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Absolute Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 34 21 136 150 1.2 ±20 500 34 15 5.5 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063 in. (1.6mm) from case for 10s) 9.3 (Typical) g www.irf.com 1 8/14/01 IRHM7150 Pre-Irradiation @ Tjj = 25°C (Unless Otherwise Specified) T Min 100 — — — 2.0 8.0 — — — — — — — — — — — — Electrical Characteristics Parameter Typ Max Units — 0.13 — — — — — — — — — — — — — — — 6.8 — — V V/°C Test Conditions VGS =0 V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 21A " VGS = 12V, ID = 34A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 21A " VDS= 80V,VGS=0V VDS = 80V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 34A VDS = 50V VDD = 50V, ID = 14A, VGS = 12V, RG = 2.35Ω IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance 100 -100 160 35 65 45 190 170 130 — nA nC ns nH Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4300 1200 200 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 34 136 1.4 570 5.8 A V nS µC Tj = 25°C, IS = 34A, VGS = 0V ➃ Tj = 25°C, IF = 34A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient Min Typ Max Units — — — — 0.83 0.21 — — 48 °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 Ω BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current 0.065 Ω 0.076 4.0 V — S( ) 25 µA 250 Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz Test Conditions Test Conditions Typical socket mount www.irf.com Radiation Characteristics Pre-Irradiation IRHM7150 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter Min Min 100K Rads(Si) Max — 4.0 100 -100 25 0.065 0.065 1.4 Min 300 to 1000K Rads (Si) Max Units V nA µA Ω Ω V Test Conditions Test BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage# ➃ Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source# ➃ On-State Resistance (TO-3) Static Drain-to-Source# ➃ On-State Resistance (TO-254AA) Diode Forward Voltage# ➃ 100 2.0 — — — — — — 100 1.25 — — — — — — — 4.5 100 -100 50 0.09 0.09 1.4 VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =21A VGS = 12V, ID =21A VGS = 0V, IS = 34A 1. Part number IRHM7150 (JANSR2N7268) 2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET Energy Range VDS(V) MeV/(mg/cm )) (MeV) (µm) @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V 28 285 43 100 100 100 80 60 — 36.8 305 39 100 90 70 50 — — 120 100 80 VDS 60 40 20 0 0 -5 -10 VGS -15 -20 -25 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM7150 Post-Irradiation Pre-Irradiation Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure 4 www.irf.com Post-Irradiation Pre-Irradiation IRHM7150 Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation www.irf.com 5 IRHM7150 Note: Bias Conditions during radiation: V/5 = 12 Vdc, V,5 = 0 Vdc Characteristics RadiationPost-Irradiation Pre-Irradiation Fig 9. Typical Output Characteristics Pre-Irradiation Fig 10. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 11. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 12. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) 6 www.irf.com Radiation Characteristics Pre-Irradiation Note: Bias Conditions during radiation: V/5 = 0 Vdc, V,5 = 80 Vdc IRHM7150 Fig 13. Typical Output Characteristics Pre-Irradiation Fig 14. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 15. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 16. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) www.irf.com 7 IRHM7150 Pre-Irradiation Fig 17. Typical Output Characteristics Fig 18. Typical Output Characteristics Fig 19. Typical Transfer Characteristics Fig 20. Normalized On-Resistance Vs. Temperature 8 www.irf.com Pre-Irradiation IRHM7150 29 Fig 21. Typical CapacitanceVs. Drain-to-Source Voltage Fig 22. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 23. Typical Source-Drain Diode Forward Voltage Fig 24. Maximum Safe Operating Area www.irf.com 9 IRHM7150 Pre-Irradiation VDS VGS RG RD D.U.T. + -VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 26a. Switching Time Test Circuit VDS 90% Fig 25. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 26b. Switching Time Waveforms Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 www.irf.com Pre-Irradiation IRHM7150 15V VDS L DRIVER RG 20V VGS D.U.T IAS tp + - VDD A 0.01Ω Fig 28a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 28c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 28b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 29a. Basic Gate Charge Waveform Fig 29b. Gate Charge Test Circuit www.irf.com 11 IRHM7150 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 0.86mH Peak IL = 26A, VGS = 12V ➂ ISD ≤ 26A, di/dt ≤ 190A/µs, VDD ≤ 100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. Total 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with V DS Bias. T otal 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-254AA .12 ( .005 ) 3.78 ( .149 ) 3.53 ( .139 ) -A13.84 ( .545 ) 13.59 ( .535 ) 6.60 ( .260 ) 6.32 ( .249 ) -B1.27 ( .050 ) 1.02 ( .040 ) 17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) 1 2 3 20.32 ( .800 ) 20.07 ( .790 ) 13.84 ( .545 ) 13.59 ( .535 ) LEGEND 1 - COLL 2 - EMIT 3 - GATE -C- 3.81 ( .150 ) 2X 3X 1.14 ( .045 ) 0.89 ( .035 ) .50 ( .020 ) .25 ( .010 ) M C AM B MC 3.81 ( .150 ) LEGEND 1- DRAIN 2- SOURCE 3- GATE IRHM57163SED IRHM57163SEU CAUTION CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 08/01 12 www.irf.com