IRHM7250SE

PD - 91779A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRHM7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A IRHM7250SE 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Features: n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 26 16 104 150 1.2 ±20 500 26 15 5.9 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063 in. (1.6mm) from case for 10 sec.) 9.3 (Typical) g www.irf.com 1 5/15/01 I RHM7250SE Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — — 2.5 7.5 — — — — — — — — — — — — Typ Max Units — 0.26 — — — — — — — — — — — — — — — 6.8 — — 0.10 0.105 4.5 — 25 250 100 -100 180 35 83 33 140 140 140 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 16A ➃ VGS = 12V, ID = 26A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 16A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 26A VDS = 100V VDD = 100V, ID =26A, VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 3100 990 380 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 26 104 1.9 550 8.8 Test Conditions A V nS µC Tj = 25°C, IS = 26A, VGS = 0V ➃ Tj = 25°C, IF = 26A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ M a x Units — — — — 0.83 0.21 — — 48 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHM7250SE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Source „ On-State Resistance (TO-254 Diode Forward Voltage „ 100K Rads (Si) Units V nA µA Ω Ω V Test Conditions ˆ VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 160V, VGS=0V VGS = 12V, ID = 16A VGS = 12V, ID = 16A VGS = 0V, ID = 26A Min 200 2.0 — — — — — — Max — 4.5 100 -100 50 0.10 0.10 1.9 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 Range (µm) @VGS=0V 43 200 39 200 VDS (V) @VGS=-5V @VGS=-10V 200 200 200 200 @VGS=-15V @VGS=-20V 200 200 180 140 250 200 VDS 150 100 50 0 0 -5 -10 VGS -15 -20 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 I RHM7250SE Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 10 I D , Drain-to-Source Current (A)  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 100  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 5.0V 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 1 0.1 20µs PULSE WIDTH 5.0V TJ = 25 °C 1 10 100 1 0.1  VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 100 TJ = 25 ° C  T J = 150° C  R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) ID = 26A  1.5 1.0 10 0.5 1 5 6 7 8 9  V DS = 50V 20µs PULSE WIDTH 10 11 12 13 0.0 -60 -40 -20 VGS = 12V  0 20 40 60 80 100 120 140 16 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHM7250SE 6000 5000 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF)  VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 26A  16  VDS = 160V VDS = 100V VDS = 40V 4000 Ciss  12 3000 8 2000 C oss C rss 1000 4 0 1 10 100 0 0 40  FOR TEST CIRCUIT SEE FIGURE 13 120 80 160 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on) I D , Drain Current (A) 100 100 10us  TJ = 150 ° C  10 100us  10  1ms TJ = 25 ° C  1 0.4 V GS = 0 V  0.8 1.2 1.6 2.0 2.4 1  TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100  10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 I RHM7250SE Pre-Irradiation 30 VDS VGS RG RD 25 D.U.T. + I D , Drain Current (A) 20 -V DD VGS 15 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit VDS 90% 5 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 D = 0.50 Thermal Response (Z thJC ) 0.20 0.1 0.10 0.05 0.02 0.01 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1 0.0001 0.001 0.01  PDM t1 t2 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM7250SE 1200 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 1000  TOP BOTTOM ID 12A 16A 26A VD S L D R IV E R 800 RG D .U .T. IA S tp 600 + - VD D A VGS 20V 0 .0 1 Ω 400 Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V (B R )D S S tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 I RHM7250SE Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L= 1.5 mH Peak IL = 26A, VGS = 12V ➂ ISD ≤ 26A, di/dt ≤ 400A/µs, VDD ≤ 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ T otal Dose Irradiation with V DS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions —TO-254AA .1 2 ( .0 0 5 ) 3 .7 8 ( .14 9 ) 3 .5 3 ( .13 9 ) -A 1 3.8 4 ( .5 4 5 ) 1 3.5 9 ( .5 3 5 ) 6 .6 0 ( .2 60 ) 6 .3 2 ( .2 49 ) -B 1 .2 7 ( .0 50 ) 1 .0 2 ( .0 40 ) 17 .4 0 ( .68 5 ) 16 .8 9 ( .66 5 ) 3 1 .4 0 ( 1 .2 3 5 ) 3 0 .3 9 ( 1 .1 9 9 ) 20 .3 2 ( .8 00 ) 20 .0 7 ( .7 90 ) 1 3.84 ( .5 4 5 ) 1 3.59 ( .5 3 5 ) 1 2 3 -C - LE G E N D 1 - COLL 2 - E M IT 3 - GA TE 3X 3.81 ( .1 5 0 ) 2X 1.1 4 ( .0 45 ) 0.8 9 ( .0 35 ) .50 ( .0 2 0 ) .25 ( .0 1 0 ) M C AM B MC 3.81 ( .1 5 0 ) L EGEND 1- DRAIN 2- SOURCE 3- GATE IRHM57163SED IRHM57163SEU C AUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/01 8 www.irf.com