IRHMB53Z60

PD-96973 RADIATION HARDENED IRHMB57Z60 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (Tabless - Low-Ohmic TO-254AA) 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMB57Z60 100K Rads (Si) IRHMB53Z60 300K Rads (Si) IRHMB54Z60 600K Rads (Si) IRHMB58Z60 1000K Rads (Si) RDS(on) ID 0.0045Ω 45A* 0.0045Ω 45A* 0.0045Ω 45A* 0.0045Ω 45A* Tabless Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) a nd low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 45* 45* 180 208 1.67 ±20 1250 45 20.8 1.08 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g 300 (0.063 in. /1.6 mm from case for 10s) 8.0 (Typical) www.irf.com 1 03/08/05 IRHMB57Z60 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 30 — — 2.0 73 — — — — — — — — — — — — Typ Max Units — 0.03 — — — — — — — — — — — — — — 6.8 — — 0.0045 4.0 — 10 25 100 -100 240 60 55 35 175 80 40 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 45A à VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 45A à VDS = 24V ,VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 15V VDD = 15V, ID = 45A VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 8884 4334 270 0.73 — — — — pF Ω VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 45* 180 1.2 140 350 Test Conditions A V ns µC Tj = 25°C, IS = 45A, VGS = 0V à Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.60 0.21 — — 48 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMB57Z60 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source On-State à Resistance (Low-Ohmic TO-254) Diode Forward Voltage à Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 30 2.0 — — — — — — — 4.0 100 -100 10 0.0040 0.0045 1.2 30 1.5 — — — — — — — 4.0 100 -100 25 0.0045 0.0050 1.2 V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 24V, VGS = 0V VGS =12V, ID = 45A VGS =12V, ID = 45A VGS = 0V, IS = 45A 1. Part numbers IRHMB57Z60 , IRHMB53Z60 and IRHMB54Z60 2. Part number IRHMB58Z60 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br I LET MeV/(mg/cm2)) 28 37 60 Energy (MeV) 261 285 344 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 40 30 30 30 25 15 37 30 30 30 23 15 33 25 25 20 15 8 35 30 25 20 15 10 5 0 0 -5 -10 VGS -15 -20 Cu Br I VDS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHMB57Z60 Pre-Irradiation 1000 VGS TOP 15V 12V 10V 8.0V 6.0V 5.0V 4.5V BOTTOM 4.0V 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 VGS 15V 12V 10V 8.0V 6.0V 5.0V 4.5V BOTTOM 4.0V TOP 10 4.0V 10 1 4.0V 60µs PULSE WIDTH Tj = 25°C 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 45A 1.5 ID, Drain-to-Source Current (A) 100 T J = 150°C T J = 25°C 10 1.0 0.5 1 4 4.5 VDS = 15V 15 60µs PULSE WIDTH 5 5.5 6 VGS = 12V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHMB57Z60 16000 14000 12000 VGS, Gate-to-Source Voltage (V) 100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 45A 16 VDS = 24V VDS = 15V C, Capacitance (pF) 10000 8000 6000 4000 2000 0 1 Ciss Coss 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 40 80 120 160 200 240 280 320 Crss 10 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A) 100 TJ = 150°C 10 T J = 25°C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µs 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 VSD , Source-to-Drain Voltage (V) 1ms Tc = 25°C Tj = 150°C Single Pulse 0 1 10 10ms 100 10 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHMB57Z60 Pre-Irradiation 160 LIMITED BY PACKAGE VDS VGS RD ID , Drain Current (A) 120 RG VGS D.U.T. + -V DD 80 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 P DM t1 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) t2 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHMB57Z60 4000 EAS , Single Pulse Avalanche Energy (mJ) 15V 3200 ID 20.1A 28.5A BOTTOM 45A TOP VDS L DRIVER 2400 RG D.U.T. IAS tp + - VDD A 1600 VGS 20V 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 800 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , - Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHMB57Z60 Pre-Irradiation à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 1.1 mH Peak IL = 45A, VGS = 12V  ISD ≤ 45A, di/dt ≤ 150A/µs, VDD ≤ 30V, TJ ≤ 150°C 12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 24 volt V DS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — Tabless - Low-Ohmic TO-254AA 0.13 [.005] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 1 2 3 B C 17.40 [.685] 12.95 [.510] 0.84 [.033] MAX. 3X 3.81 [.150] 2X NOT ES: 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 3.81 [.150] 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2005 8 www.irf.com