IRHMJ57160

PD-96916 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless) Product Summary Part Number Radiation Level IRHMJ57160 100K Rads (Si) IRHMJ53160 IRHMJ54160 300K Rads (Si) 600K Rads (Si) RDS(on) 0.018Ω 0.018Ω 0.018Ω 0.019Ω ID 35A* 35A* 35A* 35A* IRHMJ57160 100V, N-CHANNEL 5 TECHNOLOGY ™ IRHMJ58160 1000K Rads (Si) TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) a nd low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 35* 35* 140 250 2.0 ±20 500 35 25 3.4 -55 to 150 300 (for 5s) 3.7 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 12/24/04 IRHMJ57160 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — 2.0 42 — — — — — — — — — — — — Typ Max Units — 0.013 — — — — — — — — — — — — — — 6.8 — — 0.018 4.0 — 10 25 100 -100 160 45 65 35 75 75 35 — V V/°C Ω V S( ) µA Ω Test Conditions V GS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 35A à VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A à VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 50V VDD = 50V, ID = 35A VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain Lead (6mm/0.25in from package) to Source Lead(6mm/0.25in from package) with Source wires internally bonded from Source Pad to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5620 1583 50 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 35* 140 1.2 270 1.9 Test Conditions A V ns µC Tj = 25°C, IS = 35A, VGS = 0V à Tj = 25°C, IF = 35A, di/dt ≤100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.50 0.21 — — 48 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMJ57160 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (TO-254) Diode Forward Voltage à Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 80V, VGS =0V VGS = 12V, ID =35A VGS = 12V, ID =35A VGS = 0V, IS = 35A Min 100 2.0 — — — — — — Max — 4.0 100 -100 10 0.013 0.018 1.2 Min 100 1.5 — — — — — — Max — 4.0 100 -100 25 0.014 0.019 1.2 V nA µA Ω Ω V 1. Part numbers IRHMJ57160, IRHMJ53160 and IRHMJ54160 2. Part number IRHMJ58160 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 100 100 100 100 100 32.5 100 100 100 35 25 28.4 100 100 80 25 — 120 100 80 VGS 60 40 20 0 0 -5 -10 VDS -15 -20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHMJ57160 Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 5.0V 5.0V 10 10 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 35A 2.0 1.5 100 1.0 0.5 10 V DS = 50V 15 20µs PULSE WIDTH 5 6 7 8 9 10 11 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHMJ57160 10000 VGS , Gate-to-Source Voltage (V) 8000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 35A 16 VDS = 80V VDS = 50V VDS = 20V C, Capacitance (pF) 6000 Ciss Coss 12 4000 8 2000 4 Crss 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 30 60 90 120 150 180 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 100 TJ = 150 ° C 10 ID, Drain-to-Source Current (A) 100 10µs 10 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 TJ = 25 ° C 1 100µs 1ms 10ms 1000 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 1 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHMJ57160 Pre-Irradiation 100 LIMITED BY PACKAGE VGS 80 VDS RD ID , Drain Current (A) RG V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD 60 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHMJ57160 EAS , Single Pulse Avalanche Energy (mJ) 1200 TOP BOTTOM 15V 1000 ID 16A 22A 35A VDS L DRIVER 800 RG D.U.T. IAS tp + - VDD 600 A VGS 20V 0.01Ω 400 Fig 12a. Unclamped Inductive Test Circuit 200 0 25 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHMJ57160 Pre-Irradiation à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L= 0.82 mH Peak IL = 35A, VGS = 12V  ISD ≤ 35A, di/dt ≤ 330A/µs, VDD ≤ 100V, TJ ≤ 150°C 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 80 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-254AA Tabless NOT ES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. T HIS OUT LINE IS A MODIFIED T O-254AA JEDEC OUT LINE. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/2004 8 www.irf.com