IRHMK593160

PD-96912 RADIATION HARDENED IRHMK597160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-254AA) 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMK597160 100K Rads (Si) 0.05Ω IRHMK593160 300K Rads (Si) 0.05Ω ID -45A* -45A* Low-Ohmic TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ V GS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pack. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page -45* -30 -180 208 1.67 ±20 480 -45 20.8 -6.0 -55 to 150 300 (for 5s) 3.7 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 12/24/04 IRHMK597160 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Min -100 Typ Max Units — -0.13 — — — — — — — — — — — — — — 6.8 — — 0.05 -4.0 — -10 -25 -100 100 170 65 30 35 140 70 45 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -30A à VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -30A à VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -45A VDS = -50V VDD = -50V, ID = -45A VGS =-12V, RG = 1.2Ω ∆BVDSS / ∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 24 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 6110 1574 115 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -45* -180 -5.0 200 1.6 Test Conditions A V ns µC Tj = 25°C, IS = -45A, VGS = 0V à Tj = 25°C, IF =-45A, di/dt ≤ -100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.21 — 0.6 — 48 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMK597160 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source On-State à Resistance(Low-OhmicTO-254AA) Diode Forward Voltage à 100K Rads(Si)1 Min Max -100 -2.0 — — — — — — — -4.0 -100 100 -10 0.05 0.05 -5.0 300KRads(Si)2 Min Max -100 -2.0 — — — — — — — -5.0 -100 100 -10 0.05 0.05 -5.0 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA V GS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS = -80V, VGS =0V VGS = -12V, ID = -30A VGS = -12V, ID = -30A VGS = 0V, IS = -45A 1. Part number IRHMK597160 2. Part number IRHMK593160 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 Energy (MeV) 252.6 314 350 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V 33.1 -100 -100 -100 -100 -100 -100 30.5 -100 -100 -100 -100 -75 -25 28.4 -100 -100 -100 -30 — — -120 -100 -80 VDS -60 Br I Au -40 -20 0 0 5 10 15 20 25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHMK597160 Pre-Irradiation 1000 -I D , Drain-to-Source Current (A) 100 -5.0V -I D , Drain-to-Source Current (A) VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 1000 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -5.0V 10 10 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 2.5 ID = -45A -I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150 ° C 1.5 100 1.0 0.5 10 5.0 V DS = 15 -50V 20µs PULSE WIDTH 5.5 6.0 6.5 7.0 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHMK597160 10000 -VGS , Gate-to-Source Voltage (V) 8000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -45A VDS = -80V VDS = -50V VDS = -20V 16 C, Capacitance (pF) 6000 Ciss 12 4000 Coss 8 2000 4 Crss 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 40 80 120 160 200 240 -VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -ISD , Reverse Drain Current (A) 100 TJ = 150 ° C TJ = 25 ° C -I D, Drain-to-Source Current (A) 100 100µs 1ms Tc = 25°C Tj = 150°C Single Pulse 1 10 100 10 10 1 10ms 0.1 0.0 V GS = 0 V 1.5 3.0 4.5 6.0 1 -VSD ,Source-to-Drain Voltage (V) 1000 -VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHMK597160 Pre-Irradiation 50 LIMITED BY PACKAGE 40 V DS V GS RG V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + -ID , Drain Current (A) 30 20 Fig 10a. Switching Time Test Circuit 10 VGS td(on) tr t d(off) tf 0 10% 25 50 75 100 125 150 TC , Case Temperature ( °C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - V DD Pre-Irradiation IRHMK597160 EAS , Single Pulse Avalanche Energy (mJ) VDS L 1000 RG D.U.T IAS + DRIVER V DD VDD A 800 ID -20A -28.5A BOTTOM -45A TOP VGS -20V tp 0.01Ω 600 15V 400 Fig 12a. Unclamped Inductive Test Circuit I AS 200 0 25 Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - -12 V -12V 12V .2µF .3µF QGS QGD VDS 7 IRHMK597160 Pre-Irradiation à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -25V, starting TJ = 25°C, L=0.48 mH Peak IL = -45A, VGS = -12V  ISD ≤ -45A, di/dt ≤ -365A/µs, VDD ≤ -100V, TJ ≤ 150°C -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — Low-Ohmic TO-254AA Tabless NOT ES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. T HIS OUT LINE IS A MODIFIED T O-254AA JEDEC OUT LINE. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2004 8 www.irf.com