IRHMS593064

PD-94713A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS597064 100K Rads (Si) IRHMS593064 300K Rads (Si) RDS(on) 0.017Ω 0.017Ω ID -45A* -45A* IRHMS597064 60V, P-CHANNEL 5 TECHNOLOGY ™ Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ V GS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page -45* -45* -180 208 1.67 ±20 890 -45 20.8 -3.8 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063 in./1.6 mm from case for 10s) 9.3 ( Typical ) g www.irf.com 1 01/05/05 IRHMS597064 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -60 — — -2.0 40 — — — — — — — — — — — — Typ Max Units — -0.064 — — — — — — — — — — — — — — 6.8 — — 0.017 -4.0 — -10 -25 -100 100 160 60 65 35 150 100 35 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -45A à VDS = VGS, ID = -1.0mA VDS = -25V, IDS = -45A à VDS = -48V ,VGS = 0V VDS = -48V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS =-12V, ID = -45A VDS = -30V VDD = -30V, ID = -45A VGS =-12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 8040 2780 310 2.2 — — — — pF Ω VGS = 0V, VDS = -25V f = 1.0MHz f = 0.75MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -45* -180 -5.0 110 460 Test Conditions A V ns nC Tj = 25°C, IS = -45A, VGS = 0V à Tj = 25°C, IF =-45A, di/dt ≤ -100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.60 0.21 — — 48 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMS597064 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source On-State à Resistance (Low-Ohmic TO-254) Diode Forward Voltage à 100K Rads(Si)1 Min Max -60 -2.0 — — — — — — — -4.0 -100 100 -10 0.017 0.017 -5.0 300KRads(Si)2 Min Max -60 -2.0 — — — — — — — -5.0 -100 100 -10 0.017 0.017 -5.0 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS = -48V, VGS =0V VGS = -12V, ID =-45A VGS = -12V, ID =-45A VGS = 0V, I S = -45A 1. Part number IRHMS597064 2. Part number IRHMS593064 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.3 59.9 82.3 Energy (MeV) 285 345 357 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36.8 - 60 - 60 - 60 - 60 - 60 32.7 - 60 - 60 - 60 - 45 - 25 28.5 - 60 - 60 - 60 — — -70 -60 -50 -40 -30 -20 -10 0 0 5 10 VGS 15 20 Br I Au For footnotes refer to the last page www.irf.com VDS Fig a. Single Event Effect, Safe Operating Area 3 IRHMS597064 Pre-Irradiation 1000 1000 VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D, Drain-to-Source Current (A) 100 -I D, Drain-to-Source Current (A) 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V - 6.0V BOTTOM -5.0V TOP -5.0V -5.0V 10 10 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -45A -ID, Drain-to-Source Current ( Α) 1.5 T J = 25°C 100 TJ = 150°C 1.0 0.5 VDS = -25V 15 60µs PULSE WIDTH 10 5 5.5 6 6.5 7 -VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHMS597064 12000 10000 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -45A 16 VDS = -48V VDS = -30V VDS = -12V C, Capacitance (pF) 8000 Ciss 12 6000 Coss 8 4000 2000 4 Crss 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 50 100 150 200 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 -I SD , Reverse Drain Current ( Α) 100 T J = 150°C T J = 25°C 10 -I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 1 00µs 1ms 10ms Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1000 10 1 VGS = 0V 0.1 0.0 1.0 2.0 3.0 4.0 5.0 -V SD , Source-to-Drain Voltage (V) 1 -V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHMS597064 Pre-Irradiation 100 LIMITED BY PACKAGE 80 V DS V GS RG V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + -ID , Drain Current (A) 60 40 Fig 10a. Switching Time Test Circuit 20 VGS td(on) tr t d(off) tf 0 10% 25 50 75 100 125 150 TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - V DD Pre-Irradiation IRHMS597064 EAS , Single Pulse Avalanche Energy (mJ) VDS L 2000 RG D.U.T IAS + DRIVER V DD VDD A 1600 VGS -20V ID -20A -28.5A BOTTOM -45A TOP tp 0.01Ω 1200 800 15V 400 Fig 12a. Unclamped Inductive Test Circuit I AS 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - -12 V -12V 12V .2µF .3µF QGS QGD VDS 7 IRHMS597064 Pre-Irradiation à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = - 25V, starting TJ = 25°C, L= 0.88mH Peak IL = - 45A, VGS = -12V  ISD ≤ - 45A, di/dt ≤ - 417A/µs, VDD ≤ - 60V, TJ ≤ 150°C -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions —Low-Ohmic TO-254AA 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B C 14.48 [.570] 12.95 [.510] 0.84 [.033] MAX. 3X 3.81 [.150] 2X 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 3.81 [.150] NOT ES : 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/05 8 www.irf.com