IRHMS63160

PD-94723C RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) IRHMS63160 300K Rads (Si) RDS(on) 0.011Ω 0.011Ω ID 45A* 45A* IRHMS67160 100V, N-CHANNEL TECHNOLOGY International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Low-Ohmic TO-254AA Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 45* 45* 180 208 1.67 ±20 512 45 20.8 6.3 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) g www.irf.com 1 05/17/07 IRHMS67160 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — 2.0 45 — — — — — — — — — — — — Typ Max Units — 0.12 — — — — — — — — — — — — — — 6.8 — — 0.011 4.0 — 10 25 100 -100 170 60 80 35 125 75 20 — V V/°C Ω V S µA Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 45A à VDS = VGS, ID = 1.0mA V DS = 25V, IDS = 45A à VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 50V VDD = 50V, ID = 45A VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 8877 1600 20.5 1.05 — — — — pF Ω VGS = 0V, VDS = 25V f = 100KHz f = 0.71MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 45* 180 1.2 500 6.4 Test Conditions A V ns µC Tj = 25°C, IS = 45A, VGS = 0V à Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.60 0.21 — — 48 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMS67160 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Diode Forward Voltage „ Up to 300K Rads (Si)1 Min 100 2.0 — — — — — Max Units V nA µA Ω V Test Conditions ˆ VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS = 80V, VGS= 0V VGS = 12V, ID = 45A VGS = 0V, ID = 45A — 4.0 100 -100 10 0.011 1.2 1. Part numbers IRHMS67160 and IRHMS63160 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm 2)) (MeV/(mg/cm2)) Energy (MeV) 309 341 350 Range (µm) 39.5 32.5 28.4 @VGS= @VGS= @VGS= @VGS= VDS (V) @VGS= @VGS= @VGS= 0V Br I Au 36.7 59.8 82.3 100 100 100 -5V 100 100 100 -10V 100 100 - -15V 100 30 - -17V 100 - -19V 100 - -20V 40 - 120 100 80 60 40 20 0 0 -5 -10 VGS -15 -20 Br I Au For footnotes refer to the last page www.irf.com VDS Fig a. Single Event Effect, Safe Operating Area 3 IRHMS67160 Pre-Irradiation 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 1000 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 5.0V 10 20µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 10 5.0V 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 45A ID, Drain-to-Source Current ( Α) T J = 150°C 100 T J = 25°C 2.0 1.5 1.0 10 0.5 1 5 5.5 6 VDS = 25V 15 20µ s PULSE WIDTH 6.5 7 7.5 8 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHMS67160 14000 12000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 100KHz 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 45A 16 VDS = 80V VDS = 50V VDS = 20V C, Capacitance (pF) 10000 8000 6000 4000 2000 Ciss Coss 12 8 4 Crss 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 200 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current ( Α) 100 T J = 150°C T J = 25°C ID, Drain-to-Source Current (A) 100 100µs 10 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 10 1ms VGS = 0V 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V) 1 10ms 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHMS67160 Pre-Irradiation 100 LIMITED BY PACKAGE VDS VGS RD 80 ID , Drain Current (A) RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD 60 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHMS67160 1200 EAS , Single Pulse Avalanche Energy (mJ) 15V 1000 ID TOP 20A 28.5A BOTTOM 45A VDS L DRIVER 800 RG D.U.T. IAS tp 600 + - VDD A VGS 20V 400 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V(BR)DSS tp Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHMS67160 Pre-Irradiation à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 0.51 mH Peak IL = 45A, VGS = 12V  ISD ≤ 45A, di/dt ≤ 650A/ µs, VDD ≤ 100V, TJ ≤ 150°C 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 80 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions —Low-Ohmic TO-254AA 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B C ##'Ãb$&d !($Ãb$ d 1.14 [.045] 0.89 [.035] 0.36 [.014] BA '#Ãb""d H6Y 3X 3.81 [.150] 2X 3.81 [.150] 127(6 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2007 8 www.irf.com