IRHMS67260

PD - 94667A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) IRHMS63260 IRHMS64260 300K Rads (Si) 600K Rads (Si) RDS(on) 0.029Ω 0.029Ω 0.029Ω ID 45A* 45A* 45A* 45A* IRHMS67260 200V, N-CHANNEL TECHNOLOGY IRHMS68260 1000K Rads (Si) 0.029Ω International Rectifier’s R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Low-Ohmic TO-254AA Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 45* 35 180 208 1.67 ±20 344 45 20.8 5.4 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) g www.irf.com 1 10/07/03 IRHMS67260 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — 2.0 40 — — — — — — — — — — — — Typ Max Units — 0.21 — — — — — — — — — — — — — — 6.8 — — 0.029 4.0 — 10 25 100 -100 240 65 60 40 60 70 30 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 35A ➃ VDS = VGS, I D = 1.0mA VDS = 25V, IDS = 35A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 100V VDD = 100V, ID = 45A VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 8045 953 14 1.1 — — — — pF Ω VGS = 0V, VDS = 25V f = 100KHz f = 0.73MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 45* 180 1.2 640 10.5 Test Conditions A V ns µC Tj = 25°C, IS = 45A, VGS = 0V ➃ Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.60 0.21 — — 48 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMS67260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source On-State ➃ Resistance (Low-Ohmic TO-254) Diode Forward Voltage ➃ Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 200 2.0 — — — — — — — 4.0 100 -100 10 0.029 0.029 1.2 200 1.5 — — — — — — — 4.0 100 -100 25 0.029 0.029 1.2 V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 160V, VGS =0V VGS = 12V, ID =35A VGS = 12V, ID =35A VGS = 0V, IS = 45A 1. Part numbers IRHMS67260, IRHMS63260 and IRHMS64260 2. Part number IRHMS68260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm2)) Xe Xe 59 43 Energy Range (MeV) 825 2441 (µm) 66 205 0V 200 200 -5V 200 200 -10V 200 200 -15V 200 200 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= -17V 170 200 -18V 160 190 -19V 180 -20V 150 250 200 VDS 150 100 50 0 0 -5 -10 VGS -15 -20 LET=59 LET=43 Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHMS67260 Pre-Irradiation 1000 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 1000 TOP ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V  8GS 5.0V 10 10 5.0V 60 µs PULSE WIDTH Tj = 25°C 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 45A  ID , Drain-to-Source Current ( Α ) 2.0 T J = 150°C 100 T J = 25°C 1.5 1.0 0.5 10 5 5.5 6 VDS = 50V 15 60µs PULSE WIDTH 6.5 7 7.5 8 0.0 -60 -40 -20 VGS = 12V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHMS67260 14000 12000 VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 100KHz 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 45A  16  VDS = 160V VDS = 100V VDS = 40V C, Capacitance (pF) 10000 Ciss  C oss 12 8000 6000 8 4000 4 2000 0 1 C rss 0 10 100 0 50 100 FOR TEST CIRCUIT  SEE FIGURE 13 150 200 250 300 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current ( Α ) OPERATION IN THIS AREA LIMITED BY R (on) DS 100 T J = 150°C ID, Drain-to-Source Current (A) 100 10 T J = 25°C 100µs 10 1ms 1 VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 Tc = 25°C Tj = 150°C Single Pulse 1.0 10 100 10ms 0.1 0.1 1000 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHMS67260 Pre-Irradiation 60  LIMITED BY PACKAGE 50 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 40 -VDD VGS 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHMS67260 700 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 600 500  ID 20A 28.5A BOTTOM 45A TOP VDS L D R IV E R 400 RG D .U .T. IA S + - VD D 300 A VV 2 0GS tp 0 .0 1 Ω 200 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D SS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHMS67260 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 0.34 mH Peak IL = 45A, VGS = 12V ➂ I SD ≤ 45A, di/dt ≤ 840A/ µs, VDD ≤ 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions —Low-Ohmic TO-254AA 0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 0.12 [.005] 1.27 [.050] 1.02 [.040] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B 22.73 [.895] 21.21 [.835] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B R 1.52 [.060] C 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 3.81 [.150] 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A 3X 3.81 [.150] 2X 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 3.81 [.150] 2X NOTES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIME NS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. CONTROLLING DIMENS ION: INCH. CONFORMS T O JEDEC OUTLINE T O-254AA. PIN AS S IGNMENTS 1 = DRAIN 2 = S OURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/03 8 www.irf.com