IRHN4054

PD-90884D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Product Summary Part Number IRHN7054 IRHN3054 IRHN4054 IRHN8054 Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) 1000K Rads (Si) IRHN7054 JANSR2N7394U 60V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY ™ ® RDS(on) I D QPL Part Number 0.027Ω 35A JANSR2N7394U 0.027Ω 35A JANSF2N7394U 0.027Ω 35A JANSG2N7394U 0.040Ω 35A JANSH2N7394U SMD-1 International Rectifier’s RAD-Hard TM H EXFET ® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Surface Mount Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page 35 30 283 150 1.2 ±20 500 35 15 3.5 -55 to 150 300 (5sec) 2.6 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 05/15/06 IRHN7054, JANSR2N7394U Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 — — — 2.0 12 — — — — — — — — — — — — Typ Max Units — 0.053 — — — — — — — — — — — — — — — 4.0 — — 0.027 0.030 4.0 — 25 250 100 -100 200 60 75 27 100 75 75 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 30A à VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 30A à VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 30V VDD =30V, ID = 35A VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4100 2000 560 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 35 283 1.4 280 2.2 Test Conditions A V ns µC Tj = 25°C, IS = 35A, VGS = 0V à Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs VDD ≤ 50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 6.6 Test Conditions 0.83 — °C/W Soldered to a 1 inch square clad PC board Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHN7054, JANSR2N7394U International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (SMD-1) Diode Forward Voltage à Up to 500K Rads(Si)1 1000K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = V DS, ID = 1.0mA V GS = 20V VGS = -20 V VDS=48V, V GS =0V VGS = 12V, I D =30A VGS = 12V, I D =30A VGS = 0V, IS = 35A Min 60 2.0 — — — — — — Max — 4.0 100 -100 25 0.027 0.027 1.4 Min 60 1.25 — — — — — — Max — 4.5 100 -100 50 0.04 0.04 1.4 1. Part numbers IRHN7054 (JANSR2N7394U) ,IRHN3054 (JANSF2N7394U) and IRHN4054 (JANSG2N7394U) 2. Part number IRHN8054 ( JANSH2N7394U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I LET (MeV/(mg/cm2)) 36.8 59.9 Energy (MeV) 305 345 70 60 50 VDS 40 30 20 10 0 0 -5 -10 VGS -15 -20 BR I Range VDS (V) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V 39 60 60 45 40 32.8 40 35 30 25 @VGS=-20V 30 20 Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHN7054, JANSR2N7394U Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 5.0V 10 1 10 20µs PULSE WIDTH TJ = 25 °C 100 5.0V 10 1 10 20µs PULSE WIDTH TJ = 150 °C 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 50A I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C 100 1.5 TJ = 150 ° C 1.0 0.5 10 5 6 7 8 V DS = 25V 20µs PULSE WIDTH 9 10 11 12 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHN7054, JANSR2N7394U 8000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 35A VDS = 48V VDS = 30V 16 C, Capacitance (pF) 6000 Ciss 4000 12 Coss 2000 8 4 Crss 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 200 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) TJ = 25 ° C TJ = 150 ° C 100 100 100us 1ms 10 10 10ms 1 0.4 V GS = 0 V 1.0 1.6 2.2 2.8 3.4 4.0 1 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHN7054, JANSR2N7394U Pre-Irradiation 50 LIMITED BY PACKAGE 40 VDS V GS RG RD D.U.T. + ID , Drain Current (A) - VDD 30 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 0.50 Thermal Response (Z thJC ) 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHN7054, JANSR2N7394U 1200 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 15V 1000 ID 16A 22A 35A 800 VDS L DRIVER 600 RG D.U.T IAS + - VDD A VGS 20V tp 400 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHN7054, JANSR2N7394U Pre-Irradiation Foot Notes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L=0.82mH Peak IL = 35A, VGS =12V  I SD ≤ 35A, di/dt ≤ 150A/µs, VDD ≤ 60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å T otal Dose Irradiation with V DS Bias. 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2006 8 www.irf.com