IRHN8150

PD - 90720C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Product Summary Part Number IRHN7150 IRHN3150 IRHN4150 IRHN8150 Radiation Level RDS(on) 100K Rads (Si) 0.065Ω 300K Rads (Si) 0.065Ω 600K Rads (Si) 0.065Ω 1000K Rads (Si) 0.065Ω ID 34A 34A 34A 34A IRHN7150 JANSR2N7268U 100V, N-CHANNEL REF: MIL-PRF-19500/603 ® ™ RAD Hard HEXFET TECHNOLOGY QPL Part Number JANSR2N7268U JANSF2N7268U JANSG2N7268U JANSH2N7268U SMD-1 International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range PCKG. Mounting Surface Temp. Weight For footnotes refer to the last page 34 21 136 150 1.2 ±20 500 34 15 5.5 -55 to 150 300 ( for 5s) 2.6 (Typical ) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 02/01/01 IRHN7150, JANSR2N7268U Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — — 2.0 8.0 — — — — — — — — — — — — Typ Max Units — 0.13 — — — — — — — — — — — — — — — 4.0 — — V V/°C Test Conditions VGS =0 V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 21A „ VGS = 12V, ID = 34A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 21A „ VDS= 160V,VGS=0V VDS = 80V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 34A VDS = 50V VDD = 50V, ID = 34A, VGS = 12V, RG =2.35Ω 0.065 Ω 0.070 4.0 V — S( ) 25 µA 250 100 -100 160 35 65 45 190 170 130 — Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4300 1200 200 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 34 136 1.4 570 5.8 Test Conditions A V nS µC Tj = 25°C, IS = 34A, VGS = 0V ➃ Tj = 25°C, IF = 34A, di/dt ≥ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 6.6 0.83 — °C/W Test Conditions soldered to a 1”sq. copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHN7150, JANSR2N7268U International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-1) Diode Forward Voltage ➃ 100K Rads(Si)1 600 to 1000K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =21A VGS = 12V, ID =21A VGS = 0V, IS = 34A Min 200 2.0 — — — — — — Max — 4.0 100 -100 25 0.065 0.065 1.4 Min 200 1.25 — — — — — — Max — 4.5 100 -100 50 0.09 0.09 1.4 1. Part number IRHN7150 (JANSR2N7268U) 2. Part numbers IRHN3150 (JANSF2N7268U), IRHN4150 (JANSG2N7268U) and IRHN8150 (JANSH2N7268U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 Range VDS(V) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 100 100 100 80 60 39 100 90 70 50 — 120 100 80 VDS 60 40 20 0 0 -5 -10 VGS -15 -20 -25 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHN7150, JANSR2N7268U Post-Irradiation Pre-Irradiation Fig 1. Typical Response of Gate Threshhold Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure 4 www.irf.com Post-Irradiation Pre-Irradiation IRHN7150, JANSR2N7268U Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation Fig 9. High Dose Rate (Gamma Dot) Test Circuit www.irf.com 5 IRHN7150, JANSR2N7268U Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc RadiationPost-Irradiation Characteristics Pre-Irradiation Fig 10. Typical Output Characteristics Pre-Irradiation Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) 6 www.irf.com Radiation Characteristics Pre-Irradiation IRHN7150, JANSR2N7268U Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc Fig 14. Typical Output Characteristics Pre-Irradiation Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) www.irf.com 7 IRHN7150, JANSR2N7268U Pre-Irradiation Fig 18. Typical Output Characteristics Fig 19. Typical Output Characteristics Fig 20. Typical Transfer Characteristics Fig 21. Normalized On-Resistance Vs. Temperature 8 www.irf.com Pre-Irradiation IRHN7150, JANSR2N7268U Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage Fig 25. Maximum Safe Operating Area www.irf.com 9 IRHN7150, JANSR2N7268U Pre-Irradiation 35 VDS 30 RD VGS RG D.U.T. + I D , Drain Current (A) 25 -VDD 20 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 10 Fig 27a. Switching Time Test Circuit VDS 90% 5 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 26. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 27b. Switching Time Waveforms Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 www.irf.com Pre-Irradiation IRHN7150, JANSR2N7268U 1 5V VD S L D R IV E R RG D .U .T IA S + - VD D A VGS 20V tp 0 .0 1 Ω Fig 29a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 29c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 29b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 30a. Basic Gate Charge Waveform Fig 30b. Gate Charge Test Circuit www.irf.com 11 IRHN7150, JANSR2N7268U Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=0.86mH Peak IL = 34A, VGS =12V ➂ ISD ≤ 34A, di/dt ≤ 140A/µs, VDD ≤ 100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/01 12 www.irf.com