IRHNA57163SE

PD-93856D RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) Product Summary Part Number IRHNA57163SE Radiation Level 100K Rads (Si) IRHNA57163SE JANSR2N7472U2 130V, N-CHANNEL REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ RDS(on) ID QPL Part Number 0.0135Ω 75A* JANSR2N7472U2 SMD-2 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID@ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 75* 57 300 250 2.0 ±20 280 75 25 5.5 -55 to 150 300 (for 5s) 3.3 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 04/25/06 IRHNA57163SE, JANSR2N7472U2 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS / ∆ TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 130 — — 2.5 39 — — — — — — — — — — — — Typ Max Units — 0.17 — — — — — — — — — — — — — — 4.0 — — 0.0135 4.5 — 10 25 100 -100 160 55 75 35 125 80 50 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 57A à VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 57A à V DS= 104V ,VGS=0V VDS = 104V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = 65V VDD = 65V, ID = 75A, VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss Coss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5020 1490 116 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 75* 300 1.2 300 4.1 Test Conditions A V ns µC Tj = 25°C, IS = 75A, VGS = 0V à Tj = 25°C, IF = 75A, di/dt ≤ 100A/µs VDD ≤ 50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max — — — 1.6 0.5 — Units °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNA57163SE, JANSR2N7472U2 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Source „ On-State Resistance (SMD-2) Diode Forward Voltage „ Min 130 2.0 — — — — — — 100K Rads (Si) Max — 4.5 100 -100 10 0.014 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS = 104V, VGS= 0V VGS = 12V, ID = 45A VGS = 12V, ID = 45A VGS = 0V, ID = 45A 0.0135 1.2 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 130 130 130 130 130 32.5 130 130 130 100 50 28.4 130 120 30 — — 150 120 VDS 90 60 30 0 0 -5 -10 VGS -15 -20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA57163SE, JANSR2N7472U2 Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 1 5.0V 10 5.0V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 VDS , Drain-to-Source Voltage (V) 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 75A I D , Drain-to-Source Current (A) TJ = 150 ° C 100 2.5 2.0 10 TJ = 25 ° C 1.5 1.0 1 0.5 0.1 V DS = 15 50V 20µs PULSE WIDTH 5 6 7 8 9 10 11 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNA57163SE, JANSR2N7472U2 12000 10000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 75A 16 VDS = 104V VDS = 65V VDS = 26V C, Capacitance (pF) 8000 12 6000 Ciss Coss 8 4000 2000 Crss 4 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 50 100 150 200 250 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 150 ° C 10 ID, Drain-to-Source Current (A) 100 100µs 10 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 TJ = 25 ° C 1 1ms 10ms 1000 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 2.2 1 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNA57163SE, JANSR2N7472U2 Pre-Irradiation 100 LIMITED BY PACKAGE VDS VGS RD 80 I D , Drain Current (A) RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD 60 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 TC , Case Temperature ( ° C) 75 100 125 150 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.001 0.00001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA57163SE, JANSR2N7472U2 500 EAS , Single Pulse Avalanche Energy (mJ) TOP 400 15V BOTTOM ID 34A 60A 75A VDS L DRIVER 300 RG D.U.T. IAS tp + - VDD VGS 20V A 200 0.01Ω 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNA57163SE, JANSR2N7472U2 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L= 0.1 mH Peak IL = 75A, VGS = 12V  ISD ≤ 75A, di/dt ≤ 280A/ µs, VDD ≤ 130V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 104 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006 8 www.irf.com