IRHNA57260

PD - 91838C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57260 100K Rads (Si) IRHNA53260 300K Rads (Si) IRHNA54260 600K Rads (Si) IRHNA58260 1000K Rads (Si) RDS(on) 0.038Ω 0.038Ω 0.038Ω 0.043Ω ID 55A 55A 55A 55A IRHNA57260 200V, N-CHANNEL R5 TECHNOLOGY ™ SMD-2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current Œ Repetitive Avalanche Energy Œ Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 55 35 220 300 2.4 ±20 380 55 30 9.2 -55 to 150 300 (for 5s) 3.3 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 11/19/99 IRHNA57260 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — — 2.0 40 — — — — — — — — — — — — Typ Max Units — 0.22 — — — — — — — — — — — — — — — 4.0 — — V V/°C Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 35A  VGS = 12V, ID = 55A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A  VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 55A VDS = 100V VDD = 100V, ID = 55A, RG = 2.35Ω 0.038 0.040 Ω 4.0 V — S( ) 10 µA 25 100 -100 175 40 65 35 125 80 50 — Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 7900 910 70 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Œ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 55 220 1.2 450 7.0 Test Conditions A V nS µC Tj = 25°C, IS = 55A, VGS = 0V  Tj = 25°C, IF = 55A, di/dt ≥ 100A/µs VDD ≤ 25V  Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 1.6 0.42 — °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHNA57260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ‘ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage  Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source  On-State Resistance (TO-3) Static Drain-to-Source  On-State Resistance (SMD-2) Diode Forward Voltage  Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 200 2.0 — — — — — — — 4.0 100 -100 10 0.039 0.038 1.2 200 1.5 — — — — — — — 4.0 100 -100 10 0.044 0.043 1.2 V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA V GS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID =35A VGS = 12V, ID =35A VGS = 0V, IS = 55A 1. Part numbers IRHNA57260, IRHNA53260 and IRHNA54260 2. Part number IRHNA58260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 200 200 150 100 50 32.5 200 100 40 35 30 28.4 50 35 25 — — 250 200 VDS 150 100 50 0 0 -5 -10 VGS -15 -20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA57260 Pre-Irradiation 1000 1000 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 5.0V 10 5.0V 10 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 55A I D , Drain-to-Source Current (A) TJ = 25 ° C 2.0 1.5 100 TJ = 150 ° C 1.0 0.5 10 5.0 V DS = 50V 15 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNA57260 12000 10000 Ciss 8000 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 55 A VDS = 160V VDS = 100V VDS = 40V C, Capacitance (pF) 15 6000 10 4000 Coss 5 2000 Crss 0 1 10 100 0 0 50 100 FOR TEST CIRCUIT SEE FIGURE 13 150 200 250 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(ON) 100 ID, Drain Current (A) TJ = 150 ° C 100 10 10 10us 100us 1 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1ms 10ms TJ = 25 ° C V GS = 0 V 0.6 1.0 1.4 1.8 2.2 0.1 0.2 VSD ,Source-to-Drain Voltage (V) 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNA57260 Pre-Irradiation 60 VDS VGS RG RD 50 D.U.T. + I D , Drain Current (A) 40 -VDD 12V 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA57260 800 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 600 1 5V ID 25A 35A 55A VD S L D R IV E R RG D .U .T. IA S 400 + - VD D A 12V 20V tp 0 .0 1 Ω 200 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting T , Junction Temperature ( ° C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNA57260 Pre-Irradiation Footnotes: Œ Repetitive Rating; Pulse width limited by maximum junction temperature.  VDD = 50V, starting TJ = 25°C, L= 0.25 mH Peak IL = 55A, VGS = 12V Ž ISD ≤ 55A, di/dt ≤ 120A/µs, VDD ≤ 200V, TJ ≤ 150°C  Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ‘ Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-2 PAD ASSIGNMENTS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 11/99 8 www.irf.com