IRHNA58Z60

PD - 91787H RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) IRHNA54Z60 500K Rads (Si) RDS(on) ID 0.0035Ω 75A* 0.0035Ω 75A* 0.0035Ω 75A* 75A* IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL REF: MIL-PRF-19500/683 5 TECHNOLOGY ™ QPL Part Number JANSR2N7467U2 JANSF2N7467U2 JANSG2N7467U2 JANSH2N7467U2 IRHNA58Z60 1000K Rads (Si) 0.0040Ω SMD-2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) a nd low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 75* 75* 300 250 2.0 ±20 500 75 25 0.83 -55 to 150 300 (for 5s) 3.3 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 04/24/06 IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 30 — — 2.0 45 — — — — — — — — — — — — Typ Max Units — 0.026 — — — — — — — — — — — — — — 4.0 — — 0.0035 4.0 — 10 25 100 -100 200 55 40 35 125 80 50 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, I D = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 75A à VDS = VGS, ID = 1.0mA VDS ≥ 15V, IDS = 45A à VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, I D = 45A VDS = 15V VDD = 15V, ID = 45A, VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 9110 4620 150 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 75* 300 1.3 165 690 Test Conditions A Tj = 25°C, IS = 75A, VGS = 0V à Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs VDD ≤ 25V à V ns nC Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max — — — 1.6 0.5 — Units °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHNA57Z60, JANSR2N7467U2 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (SMD-2) Diode Forward Voltage à Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 30 2.0 — — — — — — — 4.0 100 -100 10 0.004 0.0035 1.3 30 1.5 — — — — — — — 4.0 100 -100 25 0.0045 0.004 1.3 V nA µA Ω Ω V Test Conditions VGS = 0V, I D = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS =24V, VGS =0V VGS = 12V, ID =45A VGS = 12V, ID =45A VGS = 0V, IS = 45A 1. Part numbers IRHNA57Z60 (JANSR2N7467U2), IRHNA53Z60 (JANSF2N7467U2) and IRHNA54Z60 (JANSG2N7467U2) 2. Part number IRHNA58Z60 (JANSH2N7467U2) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br I LET (MeV/(mg/cm2)) 28 37 60 Energy (MeV) 261 285 344 VDS (V) Range (µm) @V GS=0V @VGS=-5V @V GS=-10V @VGS=-15V @VGS=-20V 40 30 30 30 25 15 37 30 30 30 23 15 33 25 25 20 15 8 35 30 25 20 15 10 5 0 0 -5 -10 VGS -15 -20 Cu Br I VDS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 5.0V 5.0V 10 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 10 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 ° C TJ = 150 ° C 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 45A ID = 75 A I D , Drain-to-Source Current (A) 1.5 1.0 0.5 10 5.0 V DS = 15 50V 25V 20µs PULSE WIDTH 5.5 6.0 6.5 7.0 7.5 8.0 0.0 -60 -40 -20 VGS =12V 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNA57Z60, JANSR2N7467U2 20000 C, Capacitance (pF) 15000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 45 A VDS = 24V VDS = 15V 15 Coss 10000 Ciss 10 5000 5 Crss 0 1 10 100 0 0 25 50 75 FOR TEST CIRCUIT SEE FIGURE 13 100 125 150 175 200 225 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 TJ = 25 ° C TJ = 150 ° C ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) 100 100µs 1ms 100 10 10 Tc = 25°C Tj = 150°C Single Pulse 1 0.1 1 10 10ms 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation 250 LIMITED BY PACKAGE VDS VGS RD 200 ID , Drain Current (A) RG D.U.T. + -V DD 150 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 100 Fig 10a. Switching Time Test Circuit 50 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA57Z60, JANSR2N7467U2 1200 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 15V 1000 ID 34A 47A 75A VDS L DRIVER 800 RG D.U.T. IAS 600 + - VDD A VGS 20V tp 0.01Ω 400 Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 0.3mH Peak IL = 75A, VGS = 12V  ISD ≤ 75A, di/dt ≤ 94A/µs, VDD ≤ 30V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 24 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006 8 www.irf.com