IRHNA597260

PD - 94168A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) ID IRHNA597260 100K Rads (Si) 0.102Ω -35.5A IRHNA593260 300K Rads (Si) 0.102Ω -35.5A IRHNA597260 200V, P-CHANNEL 4#  TECHNOLOGY c SMD-2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight -35.5 -22.5 -142 300 2.4 ±20 320 -35.5 30 10 -55 to 150 300 ( for 5s ) 3.3 ( Typical ) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 08/07/01 IRHNA597260 Pre-Irradiation Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitanc Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units -200 — — V — 0.25 — V/°C — — 0.11 — — 0.102 Ω — — 0.2 -2.0 — -4.0 V 23 — — S — — -10 µA — — -25 — — -100 nA — — 100 — — 180 — — 60 nC — — 40 — — 35 — — 80 ns — — 100 — — 200 — 4.0 — nH — — — 7170 920 86 — — — pF Conditions VGS = 0V, ID = - 1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -35.5A „ VGS = -12V, ID = -22.5A VGS = -12V, ID = -22.5A,TJ =125°C VDS = VGS, ID = -1mA VDS > -15V, ID = -22.5 A VDS = -200V, VGS = 0V VDS = -160V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V ID = -35.5A VDS = -100V VGS = -12V VDD = -100V, ID = -35.5A VGS = -12V, RG = 2.35 Ω Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V ƒ = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -35.5 -142 -5.0 450 5.5 Test Conditions A V ns µC Tj = 25°C, IS = -35.5A, VGS = 0V ➃ Tj = 25°C, IF =-35.5A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 1.6 0.42 — °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNA597260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-2) Diode Forward Voltage ➃ 100K Rads(Si)1 Min Max -200 -2.0 — — — — — — — -4.0 -100 100 -10 0.103 0.102 -5.0 300KRads(Si)2 Min Max -200 -2.0 — — — — — — — -5.0 -100 100 -10 0.103 0.102 -5.0 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS = -160V, VGS =0V VGS = -12V, ID =-22.5A VGS = -12V, ID =-22.5A VGS = 0V, IS = -35.5A 1. Part number IRHNA597260, 2. Part number IRHNA593260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.3 59.9 82.3 Energy (MeV) 285 345 357 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36.8 - 200 - 200 - 200 - 200 -75 32.7 - 200 - 200 - 200 - 50 — 28.5 - 200 - 200 - 200 - 35 — -250 -200 VDS -150 -100 -50 0 0 5 10 VGS 15 20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA597260 Pre-Irradiation 1000 100 -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A)  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 1000  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 100 -5.0V 10 1 10 20µs PULSE WIDTH  T = 25 C J ° 100 10 1 20µs PULSE WIDTH  T = 150 C J ° 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -35.5A  -I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C  TJ = 150 ° C  1.5 100 1.0 0.5 10 5.0 15  V DS = -50V 20µs PULSE WIDTH 6.5 5.5 6.0 7.0 0.0 -60 -40 -20 VGS = -12V  0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNA597260 10000 8000 -VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID  = -35.5A 16 C, Capacitance (pF) Ciss   VDS = -160V VDS = -100V VDS = -40V 6000 12 4000 8 2000 C rss 0 1 C oss 4 0  FOR TEST CIRCUIT SEE FIGURE 13 150 200 0 50 100 250 10 100 -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -ISD , Reverse Drain Current (A) 100 TJ = 150 ° C  10 TJ = 25 ° C  -I D, Drain-to-Source Current (A) 100 10 1 1ms Tc = 25°C Tj = 150°C Single Pulse 1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) 0.1 0.0 V GS = 0 V  1.5 3.0 4.5 6.0 10ms -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNA597260 Pre-Irradiation 40 V DS VGS RD D.U.T. + -ID , Drain Current (A) VGS 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE) 0.01 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - 30 RG V DD Pre-Irradiation IRHNA597260 EAS , Single Pulse Avalanche Energy (mJ) VDS L 600 RG D .U .T IA S + D R IV E R VD D V DD A 500  ID -16A -22.5A BOTTOM -35.5A TOP VGS -20V tp 0.0 1Ω 400 300 15V 200 Fig 12a. Unclamped Inductive Test Circuit IAS 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF -12 V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - VDS 7 IRHNA597260 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -50V, starting TJ = 25°C, L=0.5 mH Peak IL = - 35.5A, VGS = -12V ➂ ISD ≤ - 35.5A, di/dt ≤ - 450A/µs, VDD ≤ - 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 8/01 8 www.irf.com