IRHNA63160

PD - 94299A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67160 100K Rads (Si) IRHNA63160 300K Rads (Si) RDS(on) 0.01Ω 0.01Ω ID 56A* 56A* IRHNA67160 100V, N-CHANNEL TECHNOLOGY SMD-2 International Rectifier’s R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. TM Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 56* 56* 224 250 2.0 ±20 462 56 25 5.0 -55 to 150 300 (for 5s) 3.3 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 01/07/05 IRHNA67160 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — 2.0 60 — — — — — — — — — — — — Typ Max Units — 0.11 — — — — — — — — — — — — — — 2.8 — — 0.01 4.0 — 10 25 100 -100 220 80 80 35 75 75 20 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 56A à VDS = VGS, ID = 1.0mA VDS = 25V, IDS = 56A à VDS = 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 56A VDS = 50V VDD = 50V, ID = 56A, VGS = 12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 8690 1600 20 0.45 — — — — pF Ω Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 56* 224 1.2 500 5.5 Test Conditions A V ns µC Tj = 25°C, IS = 56A, VGS = 0V à Tj = 25°C, IF = 56A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 0.5 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNA67160 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Source „ On-State Resistance (SMD-2) Diode Forward Voltage „ Up to 300K Rads (Si) Min 100 2.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions ˆ VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 80V, VGS=0V VGS = 12V, ID = 56A VGS = 12V, ID = 56A VGS = 0V, ID = 56A — 4.0 100 -100 10 0.011 0.010 1.2 Part numbers IRHNA67160 and IRHNA63160 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm2)) Br I Au 36.7 59.8 82.3 Energy (MeV) 309 341 350 Range (µm) 39.5 32.5 28.4 @VGS= @VGS= @VGS= @VGS= VDS (V) @VGS= @VGS= @VGS= 0V 100 100 100 -5V 100 100 100 -10V 100 100 - -15V 100 30 - -17V 100 - -19V 100 - -20V 40 - 120 100 80 60 40 20 0 0 -5 -10 VGS -15 -20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com VDS 3 IRHNA67160 Pre-Irradiation 1000 1000 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 100 5.0V 10 10 5.0V 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance 2.5 ID = 56A 2.0 ID, Drain-to-Source Current (A) 100 T J = 150°C T J = 25°C 10 (Normalized) 1.5 1.0 0.5 1.0 5 5.5 6 6.5 VDS = 25V 15 60µs PULSE WIDTH 7 7.5 8 8.5 9 VGS = 12V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNA67160 14000 12000 10000 8000 6000 4000 2000 0 1 100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED 20 ID = 56A VGS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd 16 VDS = 80V VDS = 50V VDS = 20V C, Capacitance (pF) Ciss 12 Coss 8 Crss 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 50 100 150 200 250 300 10 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100µs 1ms T J = 25°C 10 10 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 VGS = 0V 1.0 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V) 10ms 1000 1 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNA67160 Pre-Irradiation 120 LIMITED BY PACKAGE 100 VDS VGS RG RD D.U.T. + ID , Drain Current (A) 80 -V DD VGS 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 90% 20 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA67160 1000 EAS , Single Pulse Avalanche Energy (mJ) 15V 800 ID 25A 35.4A BOTTOM 56A TOP VDS L DRIVER 600 RG D.U.T. IAS tp + - VDD A 400 VGS 20V 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V(BR)DSS tp Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNA67160 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 0.29mH Peak IL = 56A, VGS = 12V  ISD ≤ 56A, di/dt ≤ 640A/ µs, VDD ≤ 100V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 80 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2005 8 www.irf.com