IRHNA7064

PD - 91737A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number IRHNA7064 IRHNA3064 IRHNA4064 IRHNA8064 Radiation Level RDS(on) 100K Rads (Si) 0.015Ω 300K Rads (Si) 0.015Ω 600K Rads (Si) 0.015Ω 1000K Rads (Si) 0.015Ω HEXFET® ID 75*A 75*A 75*A 75*A IRHNB7064 60V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page *Current is limited by pin diameter 75* 56 300 300 2.4 ±20 500 75* 30 2.5 -55 to 150 300 ( for 5 sec.) 3.5 (Typical ) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 12/12/01 IRHNB7064 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 — — — 2.0 18 — — — — — — — — — — — — — — — Typ Max Units — 0.056 — — — — — — — — — — — — — — — 4.0 4900 2800 860 — — 0.015 0.018 4.0 — 25 250 100 -100 260 60 86 27 120 76 93 — — — — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 56A ➃ VGS = 12V, ID = 75A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 56A ➃ VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = 30V VDD =30V, ID = 75A VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD C iss Coss Crss Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance nA nC ns nH pF Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 75* 356 3.0 220 3.1 Test Conditions A V nS µC Tj = 25°C, IS = 75A, VGS = 0V ➃ Tj = 25°C, IF = 75A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. *Current is limited by the internal wire diameter Thermal Resistance Parameter R thJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 1.6 0.42 — °C/W Test Conditions Soldered to a 1” sq. copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNB7064 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-3) Diode Forward Voltage ➃ 100 K Rads (Si)1 300-1000K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 12V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=48V, VGS =0V VGS = 12V, ID =56A VGS = 12V, ID =56A VGS = 0V, IS = 75A Min 60 2.0 — — — — — — Max — 4.0 100 -100 25 0.015 0.015 3.0 Min 60 1.25 — — — — — — Max — 4.5 100 -100 50 0.025 0.025 3.0 1. Part number IRHNB7064 2. Part numbers IRHNB8064, RHNB3064, and IRHNB4064 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) 59.9 36.8 Energy (MeV) 345 305 Range (µm) @VGS=0V I Br 32.8 39 60 40 @VGS=-5V 60 35 VD S(V) @VGS=-10V @VGS=-15V @VGS=-20V 45 30 40 25 30 20 70 60 50 VDS 40 30 20 10 0 0 -5 -10 VGS -15 -20 BR I Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNB7064 Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A)  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 10 0.1 20µs PULSE WIDTH 5.0V T = 25 °C J 1 10 100  10 0.1 5.0V 20µs PULSE WIDTH TJ = 150 °C  10 1 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) 89A ID = 75A  I D , Drain-to-Source Current (A) TJ = 25 ° C  1.5 100 TJ = 150 ° C  1.0 0.5 10 5 6 7 8  V DS = 25V 20µs PULSE WIDTH 10 11 9 12 0.0 -60 -40 -20 VGS = 12V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNB7064 10000 8000 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID 35A  = 75A 16  VDS = 48V VDS = 30V VDS = 12V 6000 Ciss  C oss 12 4000 8 2000 C rss 4 0 1 10 100 0 0 50 100 FOR TEST CIRCUIT  SEE FIGURE 13 150 200 250 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A)  TJ = 25 ° C TJ = 150 ° C  OPERATION IN THIS AREA LIMITED BY R  DS(on) I D , Drain Current (A) 100 100  100us  1ms  10ms 10 10 1 0.0 V GS = 0 V  1.0 2.0 3.0 4.0 5.0 1  TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNB7064 Pre-Irradiation 120  LIMITED BY PACKAGE 100 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 80 -VDD VGS 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 20 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNB7064 1400 EAS , Single Pulse Avalanche Energy (mJ) 15V 1200 1000  TOP BOTTOM ID 16A 22A 35A VDS L D R IV E R 800 RG D .U .T IA S + - VD D 600 A VGS 20V tp 0 .01 Ω 400 200 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNB7064 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=0.17mH Peak IL = 75A, VGS =12V ➂ ISD ≤ 75A, di/dt ≤ 220A/µs, VDD ≤ 60V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-3 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01 8 www.irf.com