IRHNA8Z60

PD - 91708B RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) Product Summary Part Number IRHNA7Z60 IRHNA3Z60 IRHNA4Z60 IRHNA8Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.009Ω 0.009Ω 0.009Ω 0.009Ω ID 75*A 75*A 75*A 75*A IRHNA7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® SMD-2 International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET® Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page *Current is limited by internal wire diameter 75* 75* 300 300 2.4 ±20 500 75 30 0.35 -55 to 150 300 ( for 5 sec.) 3.3 (Typical ) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 12/18/01 IRHNA7Z60 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 30 — — 2.0 31 — — — — — — — — — — — — — — — Typ Max Units — 0.023 — — — — — — — — — — — — — — 4.0 7000 4800 1800 — — 0.009 4.0 — 25 250 100 -100 421 104 74 32 370 150 280 — — — — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 75A ➃ VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 75A ➃ VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = 15V VDD =15V, ID = 75A VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD C iss Coss Crss Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance nA nC ns nH pF Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 75* 300 1.8 245 1.1 Test Conditions A V nS µC Tj = 25°C, IS = 75A, VGS = 0V ➃ Tj = 25°C, IF = 75A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. *Current is limited by the internal wire diameter Thermal Resistance Parameter R thJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 1.6 0.42 — °C/W Test Conditions Soldered to a 1” sq. copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNA7Z60 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-2) Diode Forward Voltage ➃ 100K Rads(Si)1 300 - 1000K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 12V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=24V, VGS =0V VGS = 12V, ID =15A VGS = 12V, ID =15A VGS = 0V, IS = 75A Min 30 2.0 — — — — — — Max — 4.0 100 -100 25 0.009 0.009 1.8 Min 30 1.25 — — — — — — Max — 4.5 100 -100 50 0.03 0.03 1.8 1. Part number IRHNA7Z60 2. Part numbers IRHNA3Z60, IRHNA4Z60 and IRHNA8Z60 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET MeV/(mg/cm²)) 36.8 59.9 80.3 Energy (MeV) 305 345 313 Range (µm) @VGS=0V Br I AU 39 32.8 26.5 30 25 22.5 @VGS=-5V 30 25 22.5 VDS(V) @VGS=-10V 30 20 15 @VGS=-15V 25 15 10 @VGS=-20V 20 10 _ 35 30 25 VDS 20 15 10 5 0 0 -5 -10 VGS -15 -20 Br I AU Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA7Z60 Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A)  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 5.0V 5.0V 10 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 10 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 ° C  TJ = 150 ° C  R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 75A  I D , Drain-to-Source Current (A) 1.5 100 1.0 0.5 10 5 6 7 8  V DS = 50V 20µs PULSE WIDTH 10 11 9 12 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNA7Z60 15000 VGS , Gate-to-Source Voltage (V) 12000 VGS = Ciss = C = C Crss = oss oss C, Capacitance (pF) Ciss  9000  0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 75A  16  VDS = 24V VDS = 15V 12 6000 C rss 8 3000 4 0 1 10 100 0 0 100 FOR TEST CIRCUIT  SEE FIGURE 13 200 300 400 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) TJ = 25 ° C  TJ = 150 ° C  OPERATION IN THIS AREA LIMITED BY R  DS(on) 100 I D , Drain Current (A)  100us 100 10  1ms 1 0.0 V GS = 0 V  1.0 2.0 3.0 4.0 5.0 6.0 10  TC = 25 ° C TJ = 150 ° C Single Pulse 1 10  10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNA7Z60 Pre-Irradiation 160  LIMITED BY PACKAGE VGS 120 VDS RD D.U.T. + I D , Drain Current (A) RG -VDD VGS 80 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1 0.0001 0.001 0.01  P DM t1 t2 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA7Z60 1500 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 1200  TOP BOTTOM ID 34A 47A 75A VD S L D R IV E R 900 RG D .U .T IA S + - VD D A VGS 20V tp 600 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit 300 V (B R )D S S tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNA7Z60 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=0.17mH Peak IL = 75A, VGS =12V ➂ ISD ≤ 75A, di/dt ≤ 94A/µs, VDD ≤ 30V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01 8 www.irf.com