IRHNA9260

PD - 93969 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA9260 100K Rads (Si) IRHNA93260 300K Rads (Si) RDS(on) 0.154Ω 0.154Ω ID -29A -29A IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard ™ HEXFET TECHNOLOGY ® QPL Part Number JANSR2N7426U JANSF2N7426U SMD-2 International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TM H EXFET® Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight -29 -18 -116 300 2.4 ±20 500 -29 30 -20 -55 to 150 300 (for 5s) 3.3 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 11/21/00 IRHNA9260, JANSR2N7426U Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -200 — — — -2.0 14 — — — — — — — — — — — — Typ Max Units — -0.27 — — — — — — — — — — — — — — — 4.0 — — 0.154 0.159 -4.0 — -25 -250 -100 100 300 65 58 37 141 148 220 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -18A ➃ VGS = -12V, ID = -29A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -18A ➃ VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = -29A VDS = -100V VDD = -100V, ID = -29A RG = 2.35Ω IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 6143 915 159 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -29 -116 -3.0 738 12 Test Conditions A V ns µC Tj = 25°C, IS = -29A, VGS = 0V ➃ Tj = 25°C, IF = -29A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max — — — 1.6 0.42 — Units °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHNA9260, JANSR2N7426U International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) V SD Drain-to-Source Breakdown Voltage Gate Threshold Voltage ➃ Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-2) Diode Forward Voltage ➃ 100K Rads(Si)1 300K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -160V, VGS =0V VGS = -12V, ID =-18A VGS = -12V, ID = -18A VGS = 0V, IS = -29A Min -200 -2.0 — — — — — — Max Min Max — -5.0 -100 100 -25 0.161 0.160 -3.0 — -200 -4.0 -2.0 -100 — 100 — - 25 — 0.155 — 0.154 -3.0 — — 1. Part number IRHNA9260 2. Part number IRHNA93260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2)) 28.0 36.8 Energy (MeV) 285 305 Range (µm) 43.0 39.0 VDS (V) @VGS=0V @VGS=5V @VGS=10V -200 -200 -200 -200 -200 -125 @VGS=15V -200 -75 @VGS=20V — — -250 -200 VDS -150 -100 -50 0 0 5 10 VGS 15 20 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA9260, JANSR2N7426U Pre-Irradiation 1000 100 -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A)  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 1000  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 100 -5.0V 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 10 1 20µs PULSE WIDTH  T = 25 C J ° 10 100 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -29A  -I D , Drain-to-Source Current (A) 2.0 1.5 100 1.0 0.5 10 5.0  V DS = -50V 20µs PULSE WIDTH 8.0 9.0 6.0 7.0 10.0 0.0 -60 -40 -20 VGS = -12V  0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNA9260, JANSR2N7426U 10000 8000 -VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -29A  16  VDS = 160V VDS = 100V VDS = 40V C, Capacitance (pF) 6000 Ciss  12 4000 8 2000 C oss C rss 4 0 1 10 100 0 0 50 100 150 FOR TEST CIRCUIT  SEE FIGURE 13 200 250 300 350 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) -ISD , Reverse Drain Current (A) 100 TJ = 150 ° C  -I D, Drain-to-Source Current (A) 100 10 TJ = 25 ° C  100µs 10 Tc = 25°C Tj = 150°C Single Pulse 1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) 1ms 1 10ms 0.1 0.0 V GS = 0 V  0.5 1.0 1.5 2.0 2.5 3.0 3.5 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNA9260, JANSR2N7426U Pre-Irradiation 30 V DS VGS RG RD 25 D.U.T. + -ID , Drain Current (A) 20 -12V 15 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit VDS 90% 5 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - V DD Pre-Irradiation IRHNA9260, JANSR2N7426U EAS , Single Pulse Avalanche Energy (mJ) VDS L 1200 RG D .U .T. IA S VD D A D R IV E R 900  ID -13A -18.3A BOTTOM -29A TOP -20V -12V tp 0.01 Ω 600 15V 300 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 IAS Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF .3µF VG VGS -3mA IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + QGS QGD D.U.T. - -12 V VDS 7 IRHNA9260, JANSR2N7426U Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD =-50V, starting TJ = 25°C, L = 1.2mH, Peak IL= -29A, VGS = -12V ➂ ISD ≤ - 29A, di/dt ≤ -377A/µs, VDD ≤ - 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A ➅ Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 11/00 8 www.irf.com