IRHNB7360SE

PD - 91740B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) Product Summary Part Number P art IRHNB7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A IRHNB7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings A bsolute Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page Pre-Irradiation P re-Irradiation Units 24 15 96 300 2.4 ±20 500 24 30 3.0 -55 to 150 300 (for 5 sec.) 3.5 (Typical) A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 6/4/01 IRHNB7360SE I RHNB7360SE Pre-Irradiation @ Tjj = 25°C (Unless Otherwise Specified) T Min 400 — — — 2.5 4.0 — — — — — — — — — — — — Electrical Characteristics Parameter Typ Max Units — 0.51 — — — — — — — — — — — — — — — 4.0 — — 0.20 0.21 4.5 — 50 250 100 -100 250 60 120 35 100 120 100 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 15A ➃ VGS = 12V, ID = 24A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 15A ➃ VDS= 320V ,VGS=0V VDS = 320V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 24A VDS = 200V VDD =200V, ID =24A, VGS =12V, RG = 2.35Ω BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4000 1000 460 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 24 96 1.4 750 14 Test Conditions A V nS µC Tj = 25°C, IS = 24A, VGS = 0V ➃ Tj = 25°C, IF = 24A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board M i n Typ Max Units — — — 1.6 0.42 — °C/W Test Conditions Soldered to a 2 inch square clad PC board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHNB7360SE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter Parameter BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source# $ On-State Resistance (TO-3) Static Drain-to-Source# $ On-State Resistance (SMD-3) Diode Forward Voltage# $ Min 400 2.0 — — — — — — 100K Rads (Si) Max — 4.5 100 -100 50 0.20 0.20 1.4 Units V nA µA Ω Ω V Test Conditions " VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 320V, VGS=0V VGS = 12V, ID = 15A VGS = 12V, ID = 15A VGS = 0V, ID = 24A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm )) 28 36.8 Energy (MeV) 285 305 Range (µm) 43 39 V,5 (V) (V) @V/5=0V @V/5=-5V @V/5=-10V @V/5=-15V @V/5=-20V 325 325 325 325 325 325 325 325 325 320 400 300 VDS 200 100 0 0 -5 -10 VGS -15 -20 -25 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNB7360SE I RHNB7360SE Pre-Irradiation 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 10 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 5.0V 1 1 5.0V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 0.1 0.1 20us PULSE WIDTH TJ = 150 o C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 TJ = 150 ° C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 ° C 23A ID = 24A I D , Drain-to-Source Current (A) 2.5 2.0 1.5 1 1.0 0.5 0.1 V DS = 50V 20µs PULSE WIDTH 5 6 7 8 9 10 11 12 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNB7360SE 8000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 23A 24A C, Capacitance (pF) 6000 16 VDS = 320V VDS = 200V VDS = 80V Ciss 4000 12 Coss 2000 8 Crss 4 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 40 80 120 160 200 240 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10 ID , Drain Current (A) TJ = 150 ° C 100 10us 1 10 100us TJ = 25 ° C V GS = 0 V 0.6 1.0 1.4 1.8 2.2 0.1 0.2 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1ms 10us 0ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNB7360SE I RHNB7360SE Pre-Irradiation 25 VDS VGS RD 20 RG D.U.T. + I D , Drain Current (A) -VDD 15 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNB7360SE EAS , Single Pulse Avalanche Energy (mJ) 1000 TOP 800 15V BOTTOM ID 10A 14A 4A 22A VDS L DRIVER 600 RG D.U.T. IAS tp + - VDD V/5 20V A 400 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V(BR)DSS tp Starting T , Junction Temperature( °C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNB7360SE I RHNB7360SE Pre-Irradiation Footnotes: F ootnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L= 1.74 mH Peak IL = 24A, VGS = 12V ➂ ISD ≤24A, di/dt ≤120A/µs, VDD ≤ 400V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. Total 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with V DS Bias. T otal 320 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions —SMD-3 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 06/01 8 www.irf.com