IRHNJ593230

PD - 94046C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A IRHNJ597230 200V, P-CHANNEL 4#  TECHNOLOGY c SMD-0.5 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight -8.0 -5.0 -32 75 0.6 ±20 75 -8.0 7.5 -13.7 -55 to 150 300 ( for 5s ) 1.0 ( Typical ) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 11/28/01 IRHNJ597230 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units — 0.24 — — — — — — — — — — — — — — 4.0 — — 0.505 -4.0 — -10 -25 -100 100 40 12 15 25 30 50 105 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -5.0A ➃ VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -5.0A ➃ VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS =-12V, ID = -8.0A VDS = -100V VDD = -100V, ID = -8.0A, VGS =-12V, RG = 7.5Ω, BVDSS Drain-to-Source Breakdown Voltage -200 ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 5.4 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1344 192 19 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -8.0 -32 -5.5 180 1.5 Test Conditions A V ns µC Tj = 25°C, IS = -8.0A, VGS = 0V ➃ Tj = 25°C, IF =-8.0A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 6.9 1.67 — °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNJ597230 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-0.5) Diode Forward Voltage ➃ 100K Rads(Si)1 Min Max -200 -2.0 — — — — — — — -4.0 -100 100 -10 0.505 0.505 -5.5 300KRads(Si)2 Min Max -200 -2.0 — — — — — — — -5.0 -100 100 -10 0.505 0.505 -5.5 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS=-160V, VGS =0V VGS = -12V, ID =-5.0A VGS = -12V, ID =-5.0A VGS = 0V, IS = -8.0A 1. Part number IRHNJ597230 2. Part number IRHNJ593230 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.3 59.9 82.3 Energy (MeV) 285 345 357 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36.8 - 200 - 200 - 200 - 200 -75 32.7 - 200 - 200 - 200 - 50 — 28.5 - 200 - 200 - 200 - 35 — -250 -200 -150 VDS Br -100 I Au -50 0 0 5 10 15 20 25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNJ597230 Pre-Irradiation 100 -5.0V 10 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A)  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 100  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 10 -5.0V 1 1 10 20µs PULSE WIDTH  T = 25 C J ° 100 1 1 20µs PULSE WIDTH  T = 150 C J ° 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 -I D , Drain-to-Source Current (A) TJ = 25 ° C  R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -8.0A  2.0 TJ = 150 ° C  10 1.5 1.0 0.5 1 5 6 7 8 15  V DS = -50V 20µs PULSE WIDTH 9 10 11 0.0 -60 -40 -20 VGS = -12V  0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNJ597230 2000 1600 -VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID  = -8.0A 16 C, Capacitance (pF) Ciss   VDS = -160V VDS = -100V VDS = -40V 1200 12 800 8 C oss 400 4 C rss 0 1 10 100 0 0 10 20  FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) -I D, Drain-to-Source Current (A) 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 TJ = 150 ° C  TJ = 25 ° C  10 1 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1ms 10ms 0.1 1.0 V GS = 0 V  2.0 3.0 4.0 5.0 6.0 -VSD ,Source-to-Drain Voltage (V) 1000 -V DS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNJ597230 Pre-Irradiation 8.0 V DS VGS RD D.U.T. + -ID , Drain Current (A) VGS 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - 6.0 RG V DD Pre-Irradiation IRHNJ597230 EAS , Single Pulse Avalanche Energy (mJ) VDS L 150 RG D .U .T IA S + D R IV E R VD D V DD A 120  ID -3.6A -5.1A BOTTOM -8.0A TOP VGS -20V tp 0.0 1Ω 90 15V 60 Fig 12a. Unclamped Inductive Test Circuit IAS 30 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF -12 V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - VDS 7 IRHNJ597230 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -50V, starting TJ = 25°C, L=2.4 mH Peak IL = -8.0A, VGS = -12V ➂ ISD ≤ -8.0A, di/dt ≤ -340A/µs, VDD ≤ -200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 11/01 8 www.irf.com