IRHNJ597Z30

PD-94661 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ597Z30 100K Rads (Si) IRHNJ593Z30 300K Rads (Si) RDS(on) 0.07Ω 0.07Ω ID -22A* -22A* IRHNJ597Z30 30V, P-CHANNEL 5 TECHNOLOGY ™ SMD-0.5 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID@ VGS = -12V, TC =25°C ID@ VGS = -12V, TC =100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page -22* -18 -88 75 0.6 ±20 152 -22 7.5 -1.57 -55 to 150 300 ( for 5s ) 1.0 ( Typical ) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 01/07/05 IRHNJ597Z30 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Min -30 Typ Max Units — -0.03 — — — — — — — — — — — — — — 4.0 — — 0.07 -4.0 — -10 -25 -100 100 45 20 13 25 100 50 70 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -18A à VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -18A à V DS= -24V ,VGS=0V VDS = -24V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS =-12V, ID = -22A VDS = -15V VDD = -15V, ID = -22A, VGS = -12V, RG = 7.5Ω, ∆BV DSS / ∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 12 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — 1670 975 126 6.6 — — — pF Ω Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -22* -88 -5.0 75 125 Test Conditions A V ns nC Tj = 25°C, IS = -22A, VGS = 0V à Tj = 25°C, IF =-22A, di/dt ≤ -100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max — — — 6.9 1.67 — Units °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNJ597Z30 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (SMD-0.5) Diode Forward Voltage à 100K Rads(Si)1 Min Max -30 -2.0 — — — — — — — -4.0 -100 100 -10 0.072 0.070 -5.0 300KRads(Si)2 Min Max -30 -2.0 — — — — — — — -4.0 -100 100 -10 0.072 0.070 -5.0 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS =-20V VGS = 20 V VDS=-24V, VGS =0V VGS = -12V, ID = -18A VGS = -12V, ID = -18A VGS = 0V, I S = -22A 1. Part number IRHNJ597Z30 2. Part number IRHNJ593Z30 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.5 59.7 81.4 Energy (MeV) 278.5 320 332 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36 - 30 - 30 - 30 - 30 - 30 31 - 30 - 30 - 30 - 30 - 25 27 - 30 - 30 - 30 - 25 — -35 -30 -25 -20 -15 -10 -5 0 0 5 10 VGS 15 20 Br I Au For footnotes refer to the last page www.irf.com VDS Fig a. Single Event Effect, Safe Operating Area 3 IRHNJ597Z30 Pre-Irradiation 1000 1000 VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -I D, Drain-to-Source Current (A) 100 -I D, Drain-to-Source Current (A) 100 10 -5.0V 10 -5.0V 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.5 T J = 150°C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -22A -I D, Drain-to-Source Current (A) 1.0 T J = 25°C VDS = -15V 15 60µs PULSE WIDTH 10 5 5.5 6 6.5 7 7.5 8 8.5 9 -VGS, Gate-to-Source Voltage (V) VGS = -12V 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNJ597Z30 3500 3000 2500 2000 1500 1000 500 -VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = -22A 16 VDS= -24V VDS= -15V C, Capacitance (pF) Ciss Coss 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 50 60 Crss 0 1 10 100 -VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 T J = 150°C T J = 25°C 1000 -I SD , Reverse Drain Current (A) -I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 1 00µs 10 Tc = 25°C Tj = 150°C Single Pulse 1 10 -V DS , Drain-to-Source Voltage (V) 1 1ms 10ms VGS = 0V 0.1 0 1 2 3 4 5 6 -VSD , Source-to-Drain Voltage (V) 1 100 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNJ597Z30 Pre-Irradiation 30 LIMITED BY PACKAGE V GS 24 V DS RD -ID , Drain Current (A) 18 V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 12 Fig 10a. Switching Time Test Circuit 6 VGS 10% td(on) tr t d(off) tf 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com + - RG D.U.T. V DD Pre-Irradiation IRHNJ597Z30 EAS , Single Pulse Avalanche Energy (mJ) VDS L 300 RG D.U.T IAS + DRIVER V DD VDD A 250 VGS -20V ID -9.8A -14A BOTTOM -22A TOP tp 0.01Ω 200 150 15V 100 Fig 12a. Unclamped Inductive Test Circuit I AS 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - -12 V -12V 12V .2µF .3µF QGS QGD VDS 7 IRHNJ597Z30 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = - 25V, starting TJ = 25°C, L=0.63 mH Peak IL = - 22A, VGS = -12V  ISD ≤ - 22A, di/dt ≤ -205A/µs, VDD ≤ - 30V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2005 8 www.irf.com