IRHNJ67134

PD-96931A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) IRHNJ63134 300K Rads (Si) RDS(on) 0.088Ω 0.088Ω ID 19A 19A IRHNJ67134 150V, N-CHANNEL TECHNOLOGY SMD-0.5 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 19 12 76 75 0.6 ±20 60 19 7.5 8.6 -55 to 150 300 (for 5s) 1.0 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 02/03/05 IRHNJ67134 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 150 — — 2.0 13 — — — — — — — — — — — — Typ Max Units — 0.18 — — — — — — — — — — — — — — 4.0 — — 0.088 4.0 — 10 25 100 -100 50 15 18 20 30 35 25 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 12A à VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 12A à VDS = 120V ,VGS=0V VDS = 120V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 19A VDS = 75V VDD = 75V, ID = 19A, VGS = 12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 1570 240 5.2 1.08 — — — — pF Ω Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 19 76 1.2 300 2.6 Test Conditions A V ns µC Tj = 25°C, IS = 19A, VGS = 0V à Tj = 25°C, IF = 19A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.67 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNJ67134 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Sourcee „ On-State Resistance (SMD-0.5) Diode Forward Voltage „ Up to 300K Rads (Si) Min 150 2.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions ˆ VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20V VDS = 120V, VGS= 0V VGS = 12V, ID = 12A VGS = 12V, ID = 12A VGS = 0V, ID = 19A — 4.0 100 -100 10 0.092 0.088 1.2 Part numbers IRHNJ67134 and IRHNJ63134 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables. Tables for Single Event Effect Safe Operating Area Ion Kr LET = 39 MeV/(mg/cm2) Energy = 312 MeV Range = 39 µm VGS Bias VDS Bias (Volts) (Volts) 0 150 -5 150 -10 150 -15 150 -20 150 Ion Xe LET = 59 MeV/(mg/cm2) Energy = 825 MeV Range = 66 µm VGS Bias VDS Bias (Volts) (Volts) 0 150 -5 150 -9 150 -10 140 -11 50 -15 40 180 150 120 VDS 90 60 30 0 0 -5 -10 VGS -15 -20 Kr Xe Au Ion Au LET = 90 MeV/(mg/cm2) Energy = 1480 MeV Range = 80 µm VGS Bias VDS Bias (Volts) (Volts) 0 50 -5 50 -10 30 Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNJ67134 Pre-Irradiation 1000 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 10 10 5.0V 1 5.0V 60µs PULSE WIDTH Tj = 25°C 1 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 ID = 19A 2.5 ID, Drain-to-Source Current (A) T J = 150°C 2.0 T J = 25°C 10 1.5 1.0 VDS = 50V 60µs PULSE WIDTH 15 1.0 5 6 7 8 9 10 VGS, Gate-to-Source Voltage (V) 0.5 VGS = 12V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNJ67134 2800 2400 2000 1600 1200 800 400 0 1 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 19A 16 VDS = 120V VDS = 75V VDS = 30V C, Capacitance (pF) Ciss 12 Coss 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 50 60 Crss 10 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ISD, Reverse Drain Current (A) 10 TJ = 150°C ID, Drain-to-Source Current (A) T J = 25°C 10 100µs 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1 1ms 10ms VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V) 0.1 1000 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNJ67134 Pre-Irradiation 20 VGS RG VGS VDS RD 16 ID, Drain Current (A) D.U.T. + -V DD 12 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 10% VGS td(on) tr t d(off) tf T C , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNJ67134 100 EAS , Single Pulse Avalanche Energy (mJ) 15V 80 TOP BOTTOM ID 19A 12A 8.5A VDS L DRIVER 60 RG D.U.T. IAS tp + - VDD A 40 VGS 20V 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 20 0 25 50 75 100 125 150 V(BR)DSS tp Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNJ67134 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 0.33 mH Peak IL =19A, VGS = 12V  ISD ≤ 19A, di/dt ≤ 673A/ µs, VDD ≤ 150V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 120 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2005 8 www.irf.com