IRHNJ8230

PD - 93821A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ7230 100K Rads (Si) IRHNJ3230 300K Rads (Si) IRHNJ4230 IRHNJ8230 500K Rads (Si) 1000K Rads (Si) RDS(on) 0.40Ω 0.40Ω 0.40Ω 0.53Ω ID 9.4A 9.4A 9.4A 9.4A IRHNJ7230 200V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® SMD-0.5 International Rectifier’s RAD-HardTM HEXFET® technology technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 9.4 6.0 37 75 0.6 ±20 150 5.5 7.5 16 -55 to 150 300 (for 5s) 1.0 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 05/16/06 IRHNJ7230 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BVDSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — — 2.0 2.5 — — — — — — — — — — — — Typ Max Units — 0.23 — — — — — — — — — — — — — — — 4.0 — — 0.40 0.49 4.0 — 25 250 100 -100 50 10 25 35 75 70 60 — V V/°C Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 6.0A à VGS = 12V, ID = 9.4A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 6.0A à VDS= 160V, VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 9.4A VDS = 100V VDD = 100V, ID = 9.4A, RG = 7.5Ω VGS = 12V Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ω V S( ) µA Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 250 63 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 9.4 37 1.4 460 2.4 Test Conditions A V ns µC Tj = 25°C, IS = 9.4A, VGS = 0V à Tj = 25°C, IF = 9.4A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.67 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHNJ7230 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage à Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (SMD-0.5) Diode Forward Voltage à 100K Rads(Si)1 300K - 1000K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions V GS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS = 160V, VGS =0V V GS = 12V, ID = 6.0A VGS = 12V, ID = 6.0A VGS = 0V, IS = 9.4A Min 200 2.0 — — — — — — Max — 4.0 100 -100 25 0.41 0.40 1.4 Min 200 1.25 — — — — — — Max — 4.5 100 -100 25 0.54 0.53 1.4 1. Part number IRHNJ7230 2. Part numbers IRHNJ3230, IRHNJ4230, IRHNJ8230 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET (MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 190 180 170 125 — 39 100 100 100 50 — 200 150 VDS 100 50 0 0 -5 -10 VGS -15 -20 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNJ7230 Pre-Irradiation 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 5.0V 5.0V 1 1 10 20µs PULSE WIDTH TJ = 25 °C 100 1 1 10 20µs PULSE WIDTH TJ = 150 °C 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 9.4A I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150 ° C 10 1.5 1.0 0.5 1 5 6 7 8 V DS = 50V 20µs PULSE WIDTH 9 10 11 12 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNJ7230 2000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 9.4A VDS = 160V VDS = 100V VDS = 40V 16 C, Capacitance (pF) 1500 Ciss 12 1000 8 Coss 500 4 Crss 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 ID , Drain Current (A) 100 10us 10 100us 1ms 1 10ms TJ = 150 ° C TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 2.2 0.1 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 -VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNJ7230 Pre-Irradiation 10 V DS VGS RD 8 ID , Drain Current (A) RG V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD 6 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1 PDM t1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNJ7230 400 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 300 15V ID 4.2A 5.9A 9.4A VDS L DRIVER RG VGS 20V D.U.T . IAS tp 200 + V - DD A 0.01Ω 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNJ7230 Pre-Irradiation à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 3.4mH, Peak IL = 9.4A, VGS = 12V  I SD ≤ 9.4A, di/dt ≤ 660A/µs, VDD ≤ 200V, TJ ≤ 150°C Å Total Dose Irradiation with VDS Bias. 160 volt V DS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions — SMD-0.5 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2006 8 www.irf.com