IRHNJ93130

PD - 94277 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ9130 100K Rads (Si) IRHNJ93130 300K Rads (Si) RDS(on) 0.29 Ω 0.29 Ω ID -11A -11A IRHNJ9130 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. SMD-0.5 Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temp. Weight -11 -7.0 -44 75 0.6 ±20 150 -11 7.5 -16 -55 to 150 300 (for 5s) 1.0 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 7/12/01 IRHNJ9130 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units — -0.11 — — — — — — — — — — — — — — — 4.0 — — 0.29 0.34 -4.0 — -25 -250 -100 100 45 10 25 30 50 70 70 — V V/°C Ω V S( ) µA Ω Test Conditions VGS =0 V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = - 7.0A „ VGS = -12V, ID = - 11A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = - 7.0A „ VDS= - 80V,VGS=0V VDS = - 80V VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = - 11A VDS = - 50V VDD = - 50V, ID = - 11A, VGS = -12V, RG = 7.5Ω BVDSS Drain-to-Source Breakdown Voltage -100 ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source — On-State Resistance — VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 2.5 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = - 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 310 80 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -11 -44 -3.0 250 1.0 Test Conditions A V nS µC Tj = 25°C, IS = - 11A, VGS = 0V ➃ Tj = 25°C, IF = - 11A, di/dt ≤ -100A/µs VDD ≤ - 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJPCB Junction-to-Case Junction-to-PC Board Min Typ Max Units — — — 12 1.67 — °C/W Test Conditions Soldered to 1” Sq. Copper clad Board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNJ9130 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-0.5) Diode Forward Voltage ➃ 100K Rads(Si)1 300K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=-80V, VGS =0V VGS = -12V, ID =-7.0A VGS = -12V, ID =-7.0A VGS = 0V, IS = -11A Min -100 - 2.0 — — — — — — Max — - 4.0 -100 100 -25 0.3 0.29 -3.0 Min -100 -2.0 — — — — — — Max — -5.0 -100 100 -25 0.3 0.29 -3.0 1. Part number IRHNJ9130 2. Part number IRHNJ93130 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br I LET Energy MeV/(mg/cm2)) (MeV) 28 285 36.8 305 59.8 343 Range (µm) 32.6 39 43 VDS (V) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V -100 -100 -60 -100 -100 — -100 -70 — -70 -50 — -60 -40 — -120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNJ9130 Pre-Irradiation 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A)  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 100  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 10 10 -5.0V -5.0V 1 1 20µs PULSE WIDTH  T = 25 C J ° 10 100 1 1 10 20µs PULSE WIDTH  T = 150 C J ° 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 TJ = 25 ° C  TJ = 150 ° C  10 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -11A  -I D , Drain-to-Source Current (A) 2.0 1.5 1.0 0.5 1 5 6 7 9  V DS = -50V 20µs PULSE WIDTH 10 11 12 -VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = -12V  0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNJ9130 2000 -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1500  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -11A  16 Ciss   VDS = -80V VDS = -50V VDS = -20V 12 1000 8 500 C oss C rss 4 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT  SEE FIGURE 13 30 40 50 60 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on) 10 -ID , Drain Current (A) I TJ = 150 ° C   100us 10 TJ = 25 ° C  1  1ms 0.1 0.0 V GS = 0 V  1.0 2.0 3.0 4.0 1  TC = 25 ° C TJ = 150 ° C Single Pulse 1 10  10ms 100 1000 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNJ9130 Pre-Irradiation 12 V DS VGS RG RD 10 D.U.T. + -ID , Drain Current (A) 8 VGS 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 2 VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1  PDM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - V DD Pre-Irradiation IRHNJ9130 VDS L 400 EAS , Single Pulse Avalanche Energy (mJ) RG D .U .T IA S VD D A D R IV E R -20V VGS 300  ID -4.9A -7.0A BOTTOM -11A TOP tp 0.0 1Ω 200 15V Fig 12a. Unclamped Inductive Test Circuit 100 IAS 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF -12V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - VDS 7 IRHNJ9130 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -25V, starting TJ = 25°C, L= 2.4mH Peak IL = -11A, VGS = -12V ➂ ISD ≤ -11A, di/dt ≤ -440A/µs, VDD ≤ -100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ T otal Dose Irradiation with V GS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ T otal Dose Irradiation with V DS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01 8 www.irf.com