IRHNM57110

PD-97192B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number IRHNM57110 IRHNM53110 Radiation Level RDS(on) 100K Rads (Si) 0.22Ω 300K Rads (Si) 0.22Ω IRHNM57110 JANSR2N7503U8 100V, N-CHANNEL REF: MIL-PRF-19500/743 5 TECHNOLOGY ID QPL Part Number 6.9A JANSR2N7503U8 6.9A JANSF2N7503U8 SMD-0.2 (METAL LID) Refer to Page 10 for 1 Additional Part Number IRHNMC57110 (Ceramic Lid) International Rectifier’s R5TM t echnology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/ (mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Complimentary P-Channel Available IRHNM597110, IRHNMC597110 Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 6.9 4.4 27.6 23 0.18 ±20 24 6.9 2.3 11.5 -55 to 150 300 (for 5s) 0.25 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C g www.irf.com 1 09/03/10 IRHNM57110, JANSR2N7503U8 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — 2.0 — 3.6 — — — — — — — — — — — — — — — Typ Max Units — 0.13 — — -7.5 — — — — — — — — — — — — 6.8 378 108 2.3 8.0 — — 0.22 4.0 — — 10 25 100 -100 15 4.0 5.0 6.6 5.4 34 15 — — — — V V/°C Ω V mV/°C S µA nA Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 4.4A à VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 4.4A à VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 6.9A VDS = 50V VDD = 50V, ID = 6.9A, VGS = 12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss Rg Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance nC ns nH pF Ω Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 100KHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 6.9 27.6 1.2 144 633 Test Conditions A V ns nC Tj = 25°C, IS = 6.9A, VGS = 0V „ Tj = 25°C, IF = 6.9A, di/dt ≤ 100A/µs VDD ≤ 50V „ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 5.4 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation Radiation Characteristics IRHNM57110, JANSR2N7503U8 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation … † Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source„ On-State Resistance (TO-3) Static Drain-to-Source On-state „ Resistance (SMD-0.2) Diode Forward Voltage „ Up to 300K Rads (Si)1 Min 100 2.0 — — — — Max Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS = 80V, VGS = 0V VGS = 12V, ID = 4.4A VGS = 12V, ID = 4.4A VGS = 0V, ID = 6.9A — 4.0 100 -100 10 0.226 0.22 1.2 — — 1. Part Number IRHNM57110, IRHNM53110 and additional part numbers listed on page 10. International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET (MeV/(mg/cm )) 38 ± 5% 61 ± 5% 84 ± 5% 2 Energy (MeV) 300 ± 7.5% 330 ± 7.5% 350 ± 10% Range (µm) 38 ± 7.5% 31 ± 10% 28 ± 7.5% @VGS = @VGS = VDS (V) @VGS = @VGS = @VGS = 0V 100 100 100 -5V 100 100 100 -10V 100 100 80 -15V 100 35 25 -20V 100 25 - 120 100 80 60 40 20 0 0 -5 -10 Bias VGS (V) -15 -20 Bias VDS (V) LET=38 ± 5% LET=61 ± 5% LET=84 ± 5% Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNM57110, JANSR2N7503U8 Pre-Irradiation 100 TOP 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 BOTTOM 10 BOTTOM 5.0V 5.0V 1 1 0.1 0.1 1 20µs PULSE WIDTH Tj = 25°C 10 100 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 ID, Drain-to-Source Current (A) T J = 25°C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 6.9A 2.0 T J = 150°C 10 1.5 1.0 VDS = 50V 20µs PULSE WIDTH 15 1.0 5 7 9 11 13 15 VGS, Gate-to-Source Voltage (V) 0.5 VGS = 12V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNM57110, JANSR2N7503U8 RDS(on), Drain-to -Source On Resistance ( Ω) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 4 6 8 T J = 25°C 10 12 T J = 150°C ID = 6.9A RDS(on), Drain-to -Source On Resistance ( Ω) 1.6 0.8 0.6 T J = 150°C 0.4 T J = 25°C 0.2 Vgs = 12V 0 0 2 4 6 8 10 12 14 16 ID, Drain Current (A) 14 16 VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 140 4 130 VGS(th) Gate threshold Voltage (V) ID = 1.0mA 3 120 2 110 1 ID = 50µA ID = 250µA ID = 1.0mA ID = 150mA 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5 IRHNM57110, JANSR2N7503U8 Pre-Irradiation 800 700 600 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED 20 ID = 6.9A VGS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd 16 VDS = 80V VDS = 50V VDS = 20V C, Capacitance (pF) 500 400 300 200 100 0 1 Ciss Coss 12 8 4 FOR TEST CIRCUIT SEE FIGURE 17 0 0 2 4 6 8 10 12 14 16 Crss 10 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 7 6 TJ = 150°C ISD, Reverse Drain Current (A) ID, Drain Current (A) 1.4 1.6 10 5 4 3 2 1 0 1 T J = 25°C 0.1 VGS = 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Typical Source-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature 6 www.irf.com Pre-Irradiation IRHNM57110, JANSR2N7503U8 EAS , Single Pulse Avalanche Energy (mJ) 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 50 ID, Drain-to-Source Current (A) 40 TOP BOTTOM 10 ID 3.1A 4.4A 6.9A 30 100µs 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1ms 10ms DC 20 10 0.1 0 1000 25 50 75 100 125 150 VDS , Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 10 Thermal Response ( Z thJC ) D = 0.50 0.20 1 P DM t1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) t2 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 0.1 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 7 IRHNM57110, JANSR2N7503U8 Pre-Irradiation V(BR)DSS 15V tp VDS L DRIVER RG VGS 20V . D.U.T IAS tp + - VDD A 0.01Ω I AS Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. Fig 16a. Unclamped Inductive Test Circuit 4.5V QG 12V 50KΩ .2µF .3µF QGS VG QGD VGS 3mA D.U.T. + V - DS Charge Fig 17a. Basic Gate Charge Waveform VDS VGS RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % IG ID Current Sampling Resistors Fig 17b. Gate Charge Test Circuit VDS 90% RD D.U.T. VDD + - 10% VGS td(on) tr t d(off) tf Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 www.irf.com Pre-Irradiation IRHNM57110, JANSR2N7503U8 Case Outline and Dimensions — SMD-0.2 ( Metal Lid) NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. PAD ASSIGNMENT 1 = DRAIN 2 = GATE 3 = SOURCE Case Outline and Dimensions — SMD-0.2 (Ceramic Lid) NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. PAD ASSIGNMENT 1 = DRAIN 2 = GATE 3 = SOURCE www.irf.com 9 IRHNM57110, JANSR2N7503U8 Pre-Irradiation Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = 50V, starting TJ = 25°C, L=1.0 mH Peak IL = 6.9A, VGS = 12V ƒ ISD ≤ 6.9A, di/dt ≤ 560A/µs, VDD ≤ 100V, TJ ≤ 150°C „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% … Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. † Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Additional Product Summary (continued from page 1 and 3) Product Summary Part Number IRHNMC57110 IRHNMC53110 Radiation Level RDS(on) I D 100K Rads (Si) 0.22Ω 6.9A 300K Rads (Si) 0.22 Ω 6.9A QPL Part Number JANSR2N7503U8C JANSF2N7503U8C SMD-0.2 ( CERAMIC LID ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/2010 10 www.irf.com