IRHNM597110

PD-97179A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number Radiation Level RDS(on) ID IRHNM597110 100K Rads (Si) 1.2Ω -3.1A IRHNM593110 300K Rads (Si) 1.2Ω -3.1A IRHNM597110 100V, P-CHANNEL 5 TECHNOLOGY ™ SMD-0.2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID@ VGS = -12V, TC = 25°C ID@ VGS = -12V, TC =100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -3.1 -2.0 -12.4 23 0.18 ±20 28 -3.1 2.3 -21 -55 to 150 300 (for 5s) 0.25 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C g www.irf.com 1 12/20/07 IRHNM597110 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Min -100 Typ Max Units — -0.13 — — 4.88 — — — — — — — — — — — — 6.8 379 98 9.5 24 — — 1.2 -4.0 — — -10 -25 -100 100 11 3.0 4.0 18 26 12 12 — — — — V V/°C Ω V mV/°C S µA nA Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -2.0A à VDS = VGS, ID = -1.0mA V DS = -15V, IDS = -2.0A à VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = -3.1A VDS = -50V VDD = -50V, ID = -3.1A, VGS = -12V, RG = 7.5Ω ∆BV DSS / ∆ TJ Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 — ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 1.9 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss Coss C rss Rg Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — — — — — — — — — — — nC ns nH pF Ω Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 100KHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -3.1 -12.4 -5.0 100 271 A V ns nC Test Conditions T j = 25°C, IS = -3.1A, VGS = 0V à Tj = 25°C, IF = -3.1A, di/dt ≤ -100A/µs VDD ≤ -50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max — — 5.4 Units °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNM597110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (SMD-0.2) Diode Forward Voltage à 100K Rads(Si)1 Min Max -100 -2.0 — — — — — — — -4.0 -100 100 -10 0.916 1.2 -5.0 300KRads(Si)2 Min Max -100 -2.0 — — — — — — — -4.0 -100 100 -10 0.936 1.2 -5.0 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS= -80V, VGS = 0V VGS = -12V, ID = -2.0A VGS = -12V, ID = -2.0A VGS = 0V, IS = -3.1A 1. Part number IRHNM597110 2. Part number IRHNM593110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm )) Br I Au 37.3 59.9 82.3 2 Energy (MeV) 285 344 351 Range (µm) 36.8 32.7 28.5 @VGS= @VGS= @VGS= VDS (V) @VGS= @VGS= @VGS= 0V -100 -100 -100 5V -100 -100 -100 10V -100 -100 -100 15V -100 -100 -30 17.5V -100 -75 - 20V -100 -25 - -120 -100 -80 -60 -40 -20 0 0 5 10 VGS 15 20 VDS Br I Au Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNM597110 Pre-Irradiation 100 -I D, Drain-to-Source Current (A) VGS TOP -15V -12V -10V -8.0V -6.0V -5.0V -4.5V BOTTOM -4.0V 100 TOP VGS -15V -12V -10V -8.0V -6.0V -5.0V -4.5V -4.0V 10 -I D, Drain-to-Source Current (A) 10 BOTTOM 1 -4.0V 1 -4.0V 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 RDS(on) , Drain-to-Source On Resistance 2.5 ID = -3.1A 2.0 -I D, Drain-to-Source Current (A) 10 T J = 150°C (Normalized) T J = 25°C 1.5 1.0 0.5 VDS = -50V 15 20µs PULSE WIDTH 1 4 6 8 10 12 14 16 -VGS, Gate-to-Source Voltage (V) VGS = -12V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNM597110 RDS(on), Drain-to -Source On Resistance ( Ω) 6 5 4 3 2 1 T J = 25°C 0 4 6 8 10 T J = 150°C ID = -3.1A RDS(on), Drain-to -Source On Resistance ( Ω) 7 4 3 T J = 150°C 2 T J = 25°C 1 Vgs = -12V 0 0 2 4 6 -I D, Drain Current (A) 12 14 16 -VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current -V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 150 4 140 -V GS(th) Gate threshold Voltage (V) ID = -1.0mA 3 130 2 120 1 110 ID = -50µA ID = -250µA ID = -1.0mA ID = -150mA 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5 IRHNM597110 Pre-Irradiation 600 500 -VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = -3.1A 16 VDS= -80V VDS= -50V VDS= -20V C, Capacitance (pF) 400 Ciss 12 300 200 Coss 8 100 4 FOR TEST CIRCUIT SEE FIGURE 17 0 0 2 4 6 8 10 12 0 1 Crss 10 100 -VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 3.5 3 -I D, Drain Current (A) 5 6 -I SD , Reverse Drain Current (A) 10 2.5 2 1.5 1 0.5 0 1 TJ = 150°C 0.1 VGS = 0V 0.01 0 1 2 3 4 -V SD , Source-to-Drain Voltage (V) T J = 25°C 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Typical Source-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature 6 www.irf.com Pre-Irradiation IRHNM597110 100 EAS , Single Pulse Avalanche Energy (mJ) 50 -ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 40 ID -1.4A -2.0A BOTTOM -3.1A TOP 30 100 µs 1 20 1ms Tc = 25°C Tj = 150°C Single Pulse 1 10 100 10 10ms 1000 0.1 0 25 50 75 100 125 150 -VDS , Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 10 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 1 P DM t1 t2 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 7 IRHNM597110 Pre-Irradiation VDS L I AS RG D.U.T IAS + DRIVER V DD VDD A VGS -20V tp 0.01Ω 15V tp V(BR)DSS Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -12 V QGS VG QG QGD 50KΩ -12V 12V .2µF .3µF VGS -3mA Charge IG ID Current Sampling Resistors Fig 17a. Basic Gate Charge Waveform Fig 17b. Gate Charge Test Circuit V DS V GS RG V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD td(on) tr t d(off) tf VGS D.U.T. + 10% V DD 90% VDS Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 www.irf.com + D.U.T. - VDS - Pre-Irradiation IRHNM597110 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -50V, starting TJ = 25°C, L=5.8 mH Peak IL = -3.1A, VGS = -12V  ISD ≤ -3.1A, di/dt ≤ -544A/ µs, VDD ≤ -100V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-0.2 NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. PAD ASSIGNMENT 1 = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2007 www.irf.com 9