IRHQ57214SE

PD-93881C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ57214SE 100K Rads (Si) RDS(on) 1.5Ω ID 1.9A IRHQ57214SE 250V, QUAD N-CHANNEL 5 TECHNOLOGY ™ LCC-28 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects(SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) a nd low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 1.9 1.2 7.6 12 0.1 ±20 30 1.9 1.2 9.9 -55 to 150 300 (for 5s) 0.89 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 05/19/05 IRHQ57214SE Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 250 — — 2.5 1.4 — — — — — — — — — — — — — — — Typ Max Units — 0.28 — — — — — — — — — — — — — — 6.1 338 53 2.6 — — 1.5 4.5 — 10 25 100 -100 8.0 2.1 3.4 25 20 35 20 — — — — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 1.2A à VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 1.2A à VDS= 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 1.9A VDS = 125V VDD = 125V, ID = 1.9A VGS =12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss Coss Crss Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance nA nC ns nH pF Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics (Per Die) Parameter IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 1.9 7.6 1.2 168 771 Test Conditions A V ns nC Tj = 25°C, IS = 1.9A, VGS = 0V à Tj = 25°C, IF = 1.9A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJC Junction-to-Case Min Typ Max — — 10.4 Units °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHQ57214SE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die) Parameter BV DSS VGS(th) IGSS IGSS I DSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Source „ On-State Resistance (LCC-28) Diode Forward Voltage „ Min 250 2.0 — — — — — — 100K Rads (Si) Max — 4.5 100 -100 10 1.45 1.5 1.2 Units V nA µA Ω Ω V Test Conditions ˆ VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20V VDS= 200V, VGS=0V VGS = 12V, ID = 1.2A VGS = 12V, ID = 1.2A VGS = 0V, ID = 1.9A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area (Per Die) Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @V GS=-15V @VGS=-20V 39.5 250 250 250 250 250 32.5 250 250 250 250 240 28.4 250 250 225 175 50 300 250 200 VDS 150 100 50 0 0 -5 -10 VGS -15 -20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHQ57214SE Pre-Irradiation 10 Drain-to-Source Current (A) I D , I Drain-to-Source Current (A) D’ I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 5.0V 1 1 5.0V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 VDS , Drain-to-Source Voltage (V) 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.5 I D , Drain-to-Source Current (A) TJ = 150 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 1.9A 2.0 TJ = 25 ° C 1 1.5 1.0 0.5 0.1 5.0 V DS = 15 50V 20µs PULSE WIDTH 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHQ57214SE 600 500 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 1.9A 16 VDS = 200V VDS = 125V VDS = 50V C, Capacitance (pF) 400 Ciss 12 300 Coss 200 8 100 4 Crss 1 10 100 0 0 FOR TEST CIRCUIT SEE FIGURE 13 0 4 8 12 16 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) TJ = 150 ° C 1 10 10us TJ = 25 ° C 100us 1 1ms 0.1 0.2 V GS = 0 V 0.6 0.9 1.3 1.6 0.1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 10ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHQ57214SE Pre-Irradiation 2.0 VDS 1.6 RD VGS RG D.U.T. + I D , Drain Current (A) -V DD 1.2 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.8 Fig 10a. Switching Time Test Circuit 0.4 VDS 90% 0.0 25 50 TC , Case Temperature ( °C) 75 100 125 150 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJC ) 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHQ57214SE EAS , Single Pulse Avalanche Energy (mJ) 80 TOP 60 15V BOTTOM ID 0.8A 1.2A 1.9A VDS L DRIVER RG D.U.T. IAS tp 40 + - VDD VGS 20V A 0.01Ω 20 Fig 12a. Unclamped Inductive Test Circuit 0 25 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHQ57214SE Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L= 16.4 mH Peak IL = 1.9A, VGS = 12V  ISD ≤ 1.9A, di/dt ≤ 205A/ µs, VDD ≤ 250V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — LCC-28 Q2 Q1 Q3 Q4 Q1 Q3 Q4 Q2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2005 8 www.irf.com