IRHQ597110

PD-94210A IRHQ597110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) IRHQ597110 100K Rads (Si) 0.96Ω IRHQ593110 300K Rads (Si) 0.98Ω ID -2.8A -2.8A 100V, Quad P-CHANNEL RAD-Hard HEXFET ™ ™ ® 5 TECHNOLOGY LCC-28 International Rectifier’s RAD-Hard TM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -2.8 -1.8 -11.2 12 0.1 ±20 70 -2.8 1.2 -7.1 -55 to 150 300 (for 5s) 0.89 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 05/18/05 IRHQ597110 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -100 — — — -2.0 1.9 — — — — — — — — — — — — Typ Max Units — -0.13 — — — — — — — — — — — — — — — 6.1 — — 1.2 0.96 -4.0 — -10 -25 -100 100 11 3.0 4.2 20 24 32 90 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -2.8A à VGS = -12V, ID = -1.8A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -1.8A à VDS= -80V, VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = -2.8A VDS = -50V VDD = -50V, ID = -2.8A, VGS = -12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 377 102 7.0 — — — pF Source-Drain Diode Ratings and Characteristics (Per Die) Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -2.8 -11.2 -5.0 138 555 Test Conditions A V nS nC Tj = 25°C, IS = -2.8A, VGS = 0V à Tj = 25°C, IF = -2.8A, di/dt ≤ 100A/µs VDD ≤ -50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 11.8 60 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHQ597110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die) Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-39) Static Drain-to-Source à On-State Resistance (LCC-28) Diode Forward Voltage à 100K Rads(Si)1 Min Max -100 - 2.0 — — — — — — — -4.0 -100 100 -10 0.916 0.96 -5.0 300K Rads (Si)2 Min Max -100 - 2.0 — — — — — — — -5.0 -100 100 -10 0.936 0.98 -5.0 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20 V VDS = -80V, VGS =0V VGS = -12V, ID = -1.8A VGS = -12V, ID = -1.8A VGS = 0V, IS = -2.8A 1. Part number IRHQ597110 2. Part number IRHQ593110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area (Per Die) Ion Cu Br I LET MeV/(mg/cm2)) 28.0 36.8 59.8 Energy (MeV) 285 305 343 Range (µm) @VGS=0V @VGS=5V 43.0 -100 -100 39.0 -100 -100 32.6 -60 — VDS (V) @VGS=10V -100 -70 — @VGS=15V -70 - 50 — @VGS=20V -60 -40 — -120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHQ597110 Pre-Irradiation 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 100 10 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -5.0V -5.0V 1 1 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -2.8A -I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C 10 1.5 TJ = 150 ° C 1.0 0.5 1 5.0 V DS = -50V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHQ597110 600 500 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -2.8A VDS = -80V VDS = -50V VDS = -20V 16 C, Capacitance (pF) 400 Ciss 12 300 8 200 Coss 100 4 Crss 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 2 4 6 8 10 12 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) 10 -I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 TJ = 150 ° C TJ = 25 ° C 1 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1ms 10ms 0.1 1.0 VGS = 0 V 2.0 3.0 4.0 5.0 6.0 0.1 -VSD ,Source-to-Drain Voltage (V) 1000 -VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHQ597110 Pre-Irradiation 3.0 V DS V GS RG RD 2.5 D.U.T. + -ID , Drain Current (A) 2.0 VGS 1.5 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 0.5 VGS 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 10 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com - V DD Pre-Irradiation IRHQ597110 VDS L EAS , Single Pulse Avalanche Energy (mJ) 150 RG D.U.T. IAS VGS -20V DRIVER 0.01Ω VDD A 120 ID -1.3A -1.8A BOTTOM -2.8A TOP tp 90 15V 60 Fig 12a. Unclamped Inductive Test Circuit 30 I AS 0 25 Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + QGS QGD D.U.T. - -12V -12V 12V .2µF .3µF VDS 7 IRHQ597110 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = - 25V, starting TJ = 25°C, L= 17.8mH, Peak IL = - 2.8A, VGS =-12V  ISD ≤ - 2.8A, di/dt ≤ - 263A/µs, VDD ≤ -100V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Å Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions — LCC-28 Q2 Q1 Q3 Q4 Q1 Q3 Q4 Q2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2005 8 www.irf.com