IRHSLNA57Z60

PD-94400B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) Product Summary Part Number IRHSLNA57Z60 IRHSLNA53Z60 IRHSLNA54Z60 IRHSLNA58Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 4.0mΩ 4.0mΩ 4.0mΩ 4.5mΩ QG 200nC 200nC 200nC 200nC SMD-2 IRHSLNA57Z60 30V, N-CHANNEL Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications. Features: n Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode n Ideal for Synchronous Rectifiers in DC-DC n n n n Converters up to 75A Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier Refer to IRHSNA57Z60 for Lower Rds(on) Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR IF (AV)@ TC = 25°C IF (AV)@ TC =100°C TJ, TSTG Continuous Drain or Source Current Continuous Drain or Source Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➃ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Schottky and Body Diode Avg. Forward Current ➂ Schottky and Body Diode Avg. Forward Current ➂ Opeating and Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page Pre-Irradiation Units 75* 75* 300 250 2.0 ±20 500 75 25 75* 75* -55 to 150 300 (for 5s) 3.3 (Typical) A W W/°C V mJ A mJ A °C g www.irf.com 1 03/30/04 IRHSLNA57Z60 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min 30 — 2.0 45 — — — — — — — — — — — — Typ Max Units — — — — — — — 4.0 4.0 — 50 50 V mΩ V S( ) µA mA Ω Test Conditions VGS = 0V, ID = 1.0mA VGS = 12V, ID = 45A‚ VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 45A‚ VDS = 24V, VGS=0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 45A, VDS = 15V VDD = 15V, ID = 45A, VGS =12V, RG = 2.35Ω IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — 100 — -100 — 200 — 55 — 40 — 35 — 160 — 78 — 26 6.6 — nA nC ns nH Measured from center of drain pad to center of source pad Schottky Diode & Body Diode Ratings and Characteristics Parameter VSD Diode Forward Voltage Min Typ Max Units — — — — — — — 1.15 — 1.05 — 0.95 — 175 — 500 7.95 — Test Conditions TJ = -55°C, ID=45A, VGS = 0V‚ TJ = 25°C, ID= 45A, VGS = 0V‚ TJ = 110°C, ID=45A, VGS = 0V‚ Tj = 25°C, IF =45A, di/dt ≤ 100A/µs VDS ≤ 30V Measured from center of drain pad to center of source pad (for Schottky only) V nS nC nH trr Reverse Recovery Time QRR Reverse Recovery Charge LS + LD Total Inductance ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD Thermal Resistance Parameter RthJC RthJC Junction-to-Case (MOSFET) Junction-to-Case (Schottky) Min Typ Max — — — — 0.5 0.7 Units °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHSLNA57Z60 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ ⑦ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➁ On-State Resistance (TO-3) Static Drain-to-Source ➁ On-State Resistance (SMD-2) Diode Forward Voltage ➁ Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 30 2.0 — — — — — — — 4.0 100 -100 10 4.0 4.0 1.3 30 1.5 — — — — — — — 4.0 100 -100 25 5.0 4.5 1.3 V nA µA mΩ mΩ V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS= 24V, VGS =0V VGS = 12V, ID =45A VGS = 12V, ID =45A VGS = 0V, IS = 45A 1. Part numbers IRHSLNA57Z60, IRHSLNA53Z60 and IRHSLNA54Z60 2. Part number IRHSLNA58Z60 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ⑦ Ion Br I Au LET MeV/(mg/cm2)) 37.9 59.4 80.3 Energy (MeV) 255 290 313 VDS (V) Range (µm) @V GS=0V @V GS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 33.4 30 30 30 25 20 28.8 25 25 20 15 10 26.5 22.5 22.5 15 10 — 35 30 25 VDS 20 15 10 5 0 0 -5 -10 VGS -15 -20 Br I AU Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHSLNA57Z60 Pre-Irradiation 10000 I D , Drain-to-Source Current (A) 1000 I D , Drain-to-Source Current (A)  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 10 4.5V 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 1 0.1 1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 75A  I D , Drain-to-Source Current (A) 100 TJ = 150 ° C  1.5 TJ = 25 ° C  10 1.0 0.5 1 4.0  V DS = 15V 20µs PULSE WIDTH 7.0 5.0 6.0 8.0 0.0 -60 -40 -20 VGS = 12V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHSLNA57Z60 20 ID  = 45A VGS , Gate-to-Source Voltage (V) 16  VDS = 24V VDS = 15V 12 8 4 0 0 50 100 150 200 250 300 QG , Total Gate Charge (nC) Fig 5. Typical Gate Charge Vs. Gate-to-Source Voltage Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 5a. Basic Gate Charge Waveform Fig 5b. Gate Charge Test Circuit www.irf.com 5 IRHSLNA57Z60 Pre-Irradiation 200  LIMITED BY PACKAGE VGS 150 VDS RD D.U.T. + RG I D , Drain Current (A) - VDD VGS 100 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 7a. Switching Time Test Circuit 50 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 6. Maximum Drain Current Vs. Case Temperature Fig 7b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET 6 www.irf.com Pre-Irradiation IRHSLNA57Z60 1200 EAS , Single Pulse Avalanche Energy (mJ) 1000  ID 33.5A 47.4A BOTTOM 75A TOP 800 600 400 200 0 25 50 75 100 125 150 Starting T J, Junction Temperature ( °C) Fig 9. Maximum Avalanche Energy Vs. Drain Current 15V V (B R )D SS tp VD S L DR IV E R RG 2VV 0 GS tp D.U .T. IA S + V - DD A 0.01 Ω IAS Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms www.irf.com 7 IRHSLNA57Z60 Pre-Irradiation MOSFET Body Diode & Schottky Diode Characteristics 100 Instantaneous Forward Current - I S (A) 10 Tj = 110°C Tj = 25°C Tj = -55°C 1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V SD (V) Fig. 10 - Typical Forward Voltage Drop Characterstics 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky 8 www.irf.com Pre-Irradiation IRHSLNA57Z60 Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature ➁ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➂ 50% Duty Cycle, Rectangular ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. ⑦ Specified Radiation Characteristics are for Radiation Hardened MOSFET die only. ➃ VDD = 25V, starting TJ = 25°C, L= 0.3 mH Peak IL = 75A, VGS = 12V Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2004 www.irf.com 9