IRHSNA57064

PD-94323C RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) QG IRHSNA57064 100K Rads (Si) 5.6mΩ 160nC IRHSNA53064 300K Rads (Si) 5.6mΩ 160nC IRHSNA54064 600K Rads (Si) 5.6mΩ 160nC SMD-2 IRHSNA58064 1000K Rads (Si) 6.5mΩ 160nC IRHSNA57064 60V, N-CHANNEL Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications. Features: n Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode n Ideal for Synchronous Rectifiers in DC-DC n n n n Converters up to 75A Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier Refer to IRHSLNA57064 for Lower Inductance Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR IF (AV)@ TC = 25°C IF (AV)@ TC =100°C TJ, TSTG Continuous Drain or Source Current Continuous Drain or Source Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➃ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Schottky and Body Diode Avg. Forward Current ➂ Schottky and Body Diode Avg. Forward Current ➂ Opeating and Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page Pre-Irradiation Units 75* 75* 300 250 2.0 ±20 370 75 25 75* 75* -55 to 150 300 (for 5s) 3.3 (Typical) A W W/°C V mJ A mJ A °C g www.irf.com 1 07/30/02 IRHSNA57064 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min 60 — 2.0 45 — — — — — — — — — — — — Typ Max Units — — — — — — — 5.6 4.0 — 50 50 V mΩ V S( ) µA mA Ω Test Conditions VGS = 0V, ID = 1.0mA VGS = 12V, ID = 45A‚ VDS = VGS, ID = 1.0mA VDS > 15V, I DS = 45A‚ VDS = 48V, VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =45A, VDS = 30V VDD = 30V, ID = 45A, VGS =12V, RG = 2.35Ω IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — 100 — -100 — 160 — 55 — 65 — 35 — 125 — 75 — 50 7.03 — nA nC ns nH Measured from center of drain pad to center of source pad Schottky Diode & Body Diode Ratings and Characteristics Parameter VSD Diode Forward Voltage Min Typ Max Units — — — — — — — 0.93 — 0.9 — 0.82 — 100 — 210 8.09 — Test Conditions TJ = -55°C, ID=45A, VGS = 0V‚ TJ = 25°C, ID= 45A, VGS = 0V‚ TJ = 125°C, ID=45A, VGS = 0V‚ Tj = 25°C, IF =45A, di/dt ≤ 100A/µs VDS ≤ 30V Measured from center of drain pad to center of source pad (for Schottky only) V nS nC nH trr Reverse Recovery Time QRR Reverse Recovery Charge LS + LD Total Inductance ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD Thermal Resistance Parameter RthJC RthJC Junction-to-Case (MOSFET) Junction-to-Case (Schottky) Min Typ Max — — — — 0.5 0.7 Units °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHSNA57064 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ ⑦ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➁ On-State Resistance (TO-3) Static Drain-to-Source ➁ On-State Resistance (SMD-2) Diode Forward Voltage ➁ Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 60 2.0 — — — — — — — 4.0 100 -100 10 6.1 5.6 1.3 60 1.5 — — — — — — — 4.0 100 -100 25 7.1 6.5 1.3 V nA µA mΩ mΩ V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS=48V, VGS =0V VGS = 12V, ID =45A VGS = 12V, ID =45A VGS = 0V, IS = 45A 1. Part numbers IRHSNA57064, IRHSNA53064 and IRHSNA54064 2. Part number IRHSNA58064 International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ⑦ Ion Kr Xe Au LET MeV/(mg/cm2)) 39.2 63.3 86.6 Energy (MeV) 300 300 2068 VDS (V) Range (µm) @V GS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 37.4 60 60 60 52 34 29.2 46 46 35 25 15 106 35 35 27 20 14 70 60 50 40 30 20 10 0 0 -5 -10 VGS Kr Xe Au VDS -15 -20 Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHSNA57064 Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A)  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 100  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 5.0V 10 10 5.0V 1 0.1 20µs PULSE WIDTH  T = 25 C J ° 10 100 1 1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 150 ° C  R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 75A  I D , Drain-to-Source Current (A) 1.5 100 TJ = 25 ° C  1.0 10 0.5 1 5.0  V DS = 25V 20µs PULSE WIDTH 8.0 9.0 6.0 7.0 10.0 0.0 -60 -40 -20 VGS = 12V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHSNA57064 20 ID  = 45A VGS , Gate-to-Source Voltage (V) 16  VDS = 48V VDS = 30V VDS = 12V 12 8 4 0 0 50 100 FOR TEST CIRCUIT  SEE FIGURE 5b 13 150 200 250 QG , Total Gate Charge (nC) Fig 5. Typical Gate Charge Vs. Gate-to-Source Voltage Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 5a. Basic Gate Charge Waveform Fig 5b. Gate Charge Test Circuit www.irf.com 5 IRHSNA57064 Pre-Irradiation 200  LIMITED BY PACKAGE VGS 150 VDS RD D.U.T. + RG I D , Drain Current (A) - VDD VGS 100 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 7a. Switching Time Test Circuit 50 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 6. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 7b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET 6 www.irf.com Pre-Irradiation IRHSNA57064 800 EAS , Single Pulse Avalanche Energy (mJ) 600  ID 33.5A 47.4A BOTTOM 75A TOP 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 9. Maximum Avalanche Energy Vs. Drain Current 15V V (B R )D SS tp VD S L DR IV E R RG 2VGS 0V tp D.U .T. IA S + V - DD A 0.01 Ω IAS Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms www.irf.com 7 IRHSNA57064 MOSFET Body Diode & Schottky Diode Characteristics 100 Pre-Irradiation Instantaneous Forward Current - I S (A) 10 Tj = 125°C Tj = 25°C Tj = -55°C 1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V SD (V) Fig. 10 - Typical Forward Voltage Drop Characterstics 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky 8 www.irf.com Pre-Irradiation IRHSNA57064 Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature ➁ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➂ 50% Duty Cycle, Rectangular ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. ➃ VDD = 25V, starting TJ = 25°C, L= 0.13 mH Peak IL = 75A, VGS = 12V ⑦ Specified Radiation Characteristics are for Radiation Hardened MOSFET die only. Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/02 www.irf.com 9