IRHY57130CM

PD - 93826D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) RDS(on) 0.07Ω 0.07Ω 0.07Ω ID 18A* 18A* 18A* 18A* QPL Part Number JANSR2N7484T3 JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3 IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL REF: MIL-PRF-19500/702 TECHNOLOGY 5 ™ IRHY58130CM1000K Rads (Si) 0.085Ω TM TO-257AA International Rectifier’s R5 technology provides high performance power MOSFETs for space applications.These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 14 72 75 0.6 ±20 87 18 7.5 1.4 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) www.irf.com 1 4/26/06 IRHY57130CM, JANSR2N7484T3 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — 2.0 13 — — — — — — — — — — — — Typ Max Units — 0.11 — — — — — — — — — — — — — — 6.8 — — 0.07 4.0 — 10 25 100 -100 50 7.4 20 25 100 35 30 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, I D = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 14A à VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 14A à VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, I D = 18A VDS = 50V VDD = 50V, ID = 18A, VGS =12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1005 365 50 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min Typ Max Units — — — — — — — — — — 18* 72 1.2 250 850 Test Conditions A V ns nC Tj = 25°C, IS = 18A, VGS = 0V à Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs VDD ≤ 25V à Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 1.67 80 Units °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHY57130CM, JANSR2N7484T3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (TO-257AA) Diode Forward Voltage à Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 100 2.0 — — — — — — — 4.0 100 -100 10 0.074 0.07 1.2 100 1.5 — — — — — — — 4.0 100 -100 25 0.09 0.085 1.2 V nA µA Ω Ω V Test Conditions VGS = 0V, I D = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS = 80V, VGS =0V VGS = 12V, ID =14A VGS = 12V, ID =14A V GS = 0V, IS = 18A 1. Part numbers IRHY57130CM (JANSR2N7484T3), IRHY53130CM (JANSF2N7484T3) and IRHY54130CM (JANSG2N7484T3) 2. Part number IRHY58130CM (JANSH2N7484T3) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 36.7 59.4 82.3 Energy (MeV) 309 341 350 VDS (V) Range (µm) @VGS=0V @VGS=-5V @V GS=-10V @VGS=-15V @VGS=-20V 39.5 100 100 100 100 100 32.5 100 100 100 35 25 28.4 100 100 80 25 120 100 80 VDS 60 40 20 0 0 -5 -8 VGS -10 -15 -20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHY57130CM, JANSR2N7484T3 Pre-Irradiation 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 5.0V 10 10 5.0V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 I D , Drain-to-Source Current (A) TJ = 25 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) 18A 22A ID = 16A 2.0 TJ = 150 ° C 1.5 1.0 0.5 10 5.0 V DS = 15 50V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHY57130CM, JANSR2N7484T3 2000 1600 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 22A 16A 18A VDS = 80V VDS = 50V VDS = 20V C, Capacitance (pF) 15 1200 Ciss 10 800 Coss 5 400 Crss 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 10 TJ = 150 ° C ID, Drain-to-Source Current (A) 100 10 TJ = 25 ° C 1 100µs 1ms 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) 10ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHY57130CM, JANSR2N7484T3 Pre-Irradiation 25 LIMITED BY PACKAGE VGS 20 VDS RD ID , Drain Current (A) RG D.U.T. + -V DD 15 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHY57130CM, JANSR2N7484T3 150 EAS , Single Pulse Avalanche Energy (mJ) TOP 120 15V BOTTOM ID 7.2A 10A 18A 16A VDS L DRIVER 90 RG . D.U.T IAS tp + - VDD A 60 VGS 20V 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 30 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHY57130CM, JANSR2N7484T3 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L= 0.53mH Peak IL = 18A, VGS = 12V  I SD ≤ 18A, di/dt ≤ 155A/ µs, VDD ≤ 100V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 80 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-257AA 6 %%Ãb#!d #!Ãb# d ÃÃÃÃÃÃÃ"' Ãb $d "YÑ ÃÃÃÃÃÃÃ"$%Ãb #d $'Ãb!d #'"Ãb (d  "Ãb$d  #Ãb#$d '(Ãb"$d "%"Ãb$"&d ""(Ãb$!&d ! " %'(Ãb%%$d %"(Ãb%#$d (!Ãb#"d #!Ãb# d 7 8 $''Ãb%!$d !&Ãb$d & Ãb!'d H6Y !$#Ãb d !Y ÃÃÃÃÃÃÃÃÃÃÃÃ''Ãb"$d "YÑ ÃÃÃÃÃÃÃÃÃÃÃÃ%#Ãb!$d ‘Ã$Ãb!dà 8 6à 7 "$Ãb !d IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6ITDÃ` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃDI8C "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃUP!$&66 PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006 8 www.irf.com