IRHY597034CM

PD - 94663A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level RDS(on) ID IRHY597034CM 100K Rads (Si) 0.095Ω -18A* IRHY593034CM 300K Rads (Si) 0.095Ω -18A* IRHY597034CM 60V, P-CHANNEL 5 TECHNOLOGY ™ International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. T0-257AA Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page -18* -12.5 -72 75 0.6 ±20 120 -18 7.5 -5.3 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063in/1.6mm from case for 10s ) 4.3 ( Typical ) g www.irf.com 1 05/31/05 IRHY597034CM Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -60 — — -2.0 10 — — — — — — — — — — — — Typ Max Units — -0.063 — — — — — — — — — — — — — — 6.8 — — 0.095 -4.0 — -10 -25 -100 100 45 18 13 20 120 45 25 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -12.5Aà VDS = VGS, ID = -1.0mA VDS = -25V, IDS = -12.5A à VDS= -48V ,VGS=0V VDS = -48V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS =-12V, ID = -18A VDS = -30V VDD = -30V, ID = -18A, VGS =-12V, RG = 7.5Ω, IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 1490 575 70 5.5 — — — — pF Ω Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = -25V f = 1.0MHz f = 1.73MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -18* -72 -5.0 100 200 Test Conditions A V ns nC Tj = 25°C, IS = -18A, VGS = 0V à Tj = 25°C, IF =-18A, di/dt ≤ -100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 1.67 80 °C/W Test Conditions Typical Socket Mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHY597034CM International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (TO-257AA) Diode Forward Voltage à 100K Rads(Si)1 Min Max -60 -2.0 — — — — — — — -4.0 -100 100 -10 0.087 0.095 -5.0 300KRads(Si)2 Min Max -60 -2.0 — — — — — — — -5.0 -100 100 -10 0.087 0.095 -5.0 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V V GS = 20 V VDS=-48V, VGS =0V VGS = -12V, ID =-12.5A VGS = -12V, ID =-12.5A VGS = 0V, IS = -18A 1. Part number IRHY597034CM 2. Part number IRHY593034CM International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 Energy (MeV) 252.6 314 350 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 33.1 - 60 - 60 - 60 - 60 - 60 30.5 - 60 - 60 - 60 - 45 - 25 28.4 - 60 - 60 - 60 — — -70 -60 -50 -40 -30 -20 -10 0 0 5 10 VGS 15 20 Br I Au VDS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHY597034CM Pre-Irradiation 100 VGS TOP -15V -12V -10V -8.0V -7.0V -6.0V -5.0V BOTTOM -4.5V 100 VGS -15V -12V -10V -8.0V -7.0V -6.0V - 5.0V BOTTOM -4.5V TOP -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) 10 10 -4.5V -4.5V 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 25°C T J = 150°C RDS(on) , Drain-to-Source On Resistance (Normalized) 100 -I D, Drain-to-Source Current ( Α) 2.0 ID = -18A 1.5 1.0 0.5 VDS = -25V 15 60µs PULSE WIDTH 10 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 -V GS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHY597034CM 2500 2000 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -18A VDS = -48V VDS = -30V 16 C, Capacitance (pF) 1500 Ciss Coss 12 1000 8 500 4 Crss 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 10 20 30 40 50 60 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -I SD , Reverse Drain Current ( Α) -I D, Drain-to-Source Current (A) 10 T J = 150°C T J = 25°C 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 1 10 Tc = 25°C Tj = 150°C Single Pulse 1 10 1 00µs 1ms 10ms 100 1000 0.1 0.0 1.0 2.0 3.0 VGS = 0V 4.0 5.0 6.0 1 -V SD , Source-to-Drain Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHY597034CM Pre-Irradiation 20 LIMITED BY PACKAGE 16 V DS VGS RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + ID , Drain Current (A) 12 8 Fig 10a. Switching Time Test Circuit 4 VGS 10% td(on) tr t d(off) tf 0 25 50 75 100 125 150 90% TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - V DD Pre-Irradiation IRHY597034CM EAS , Single Pulse Avalanche Energy (mJ) VDS L 250 RG D.U.T IAS + DRIVER VDD V DD A 200 ID -8.0A -11.4A BOTTOM -18A TOP VGS -20V tp 0.01Ω 150 15V 100 Fig 12a. Unclamped Inductive Test Circuit I AS 50 0 25 Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - -12 V -12V 12V .2µF .3µF QGS QGD VDS 7 IRHY597034CM Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -25V, starting TJ = 25°C, L= 0.74mH Peak IL = -18A, VGS = -12V  ISD ≤ -18A, di/dt ≤ - 370A/µs, VDD ≤ - 60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-257AA A 10.66 [.420] 10.42 [.410] 3X Ø 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035] 13.63 [.537] 13.39 [.527] 1 2 3 16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] B C 15.88 [.625] 12.70 [.500] 0.71 [.028] MAX. 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] CA B 3.05 [.120] Ø 0.50 [.020] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2005 8 www.irf.com