IRHY7130CM

PD - 91274D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si) IRHY4130CM 600K Rads (Si) IRHY8130CM 1000K Rads (Si) RDS(on) 0.18Ω 0.18Ω 0.18Ω 0.18Ω HEXFET® ID 14.4A 14.4A 14.4A 14.4A IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614 RAD-Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7380 JANSF2N7380 JANSG2N7380 JANSH2N7380 TO-257AA International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 14.4 9.1 58 75 0.6 ±20 150 — — 6.0 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 ( 0.063 in.(1.6mm) from case for 10s) 7.0 (Typical ) g www.irf.com 1 12/17/01 IRHY7130CM Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — — 2.0 2.5 — — — — — — — — — — — — Typ Max Units — 0.11 — — — — — — — — — — — — — — — 7.0 — — 0.18 0.20 4.0 — 25 250 100 -100 50 10 20 35 75 70 60 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID =9.1A ➃ VGS = 12V, ID = 14.4A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 9.1A ➃ VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =14.4A VDS = 50V VDD = 50V, ID =14.4A VGS =12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 960 340 85 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 14.4 58 1.8 275 2.5 Test Conditions A V nS µC Tj = 25°C, IS = 14.4A, VGS = 0V ➃ Tj = 25°C, IF = 14.4A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 1.67 80 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation Radiation Characteristics IRHY7130CM International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-257AA) Diode Forward Voltage ➃ 100K Rads(Si)1 300 - 1000K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =9.1A VGS = 12V, ID =9.1A VGS = 0V, IS = 14.4A Min 100 2.0 — — — — — — Max — 4.0 100 -100 25 0.18 0.18 1.8 Min 100 1.25 — — — — — — Max — 4.5 100 -100 25 0.24 0.24 1.8 1. Part number IRHY7130, (JANSR2N7380) 2. Part numbers IRHY3130 , IRHY4130 and IRHY8130 (JANSF2N7380, JANSG2N7380 and JANSH2N7380) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) 28 36.8 Energy (MeV) 285 305 Range (µm) @VGS=0V Cu Br 43 39 100 100 100 90 VD S(V) @VGS=-5V @VGS=-10V @VGS=-15V 100 70 80 50 @VGS=-20V 60 — 120 100 80 VDS 60 40 20 0 0 -5 -10 VGS -15 -20 -25 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHY7130CM Pre-Irradiation 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 10  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 5.0V 1 5.0V 1 0.1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 0.1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 I D , Drain-to-Source Current (A) TJ = 25 ° C  TJ = 150 ° C  10 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 14.4A  2.0 1.5 1.0 1 0.5 0.1 5 7 9  V DS = 50V 20µs PULSE WIDTH 11 13 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHY7130CM 2000 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1500  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 14 A  16  VDS = 80V VDS = 50V VDS = 20V 12 1000 Ciss  8 500 C oss C rss 4 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT  SEE FIGURE 13 30 40 50 60 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on) 10 TJ = 25 ° C  I D , Drain Current (A) TJ = 150 ° C  100  100us 10 1  1ms 0.1 0.0 V GS = 0 V  0.5 1.0 1.5 2.0 2.5 1  TC = 25 ° C TJ = 150 ° C Single Pulse 1 10  10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHY7130CM Pre-Irradiation 15 VDS VGS 12 RD D.U.T. + I D , Drain Current (A) RG 9 -VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHY7130CM EAS , Single Pulse Avalanche Energy (mJ) 400 1 5V 300  TOP BOTTOM ID 6.4A 9.1A 14A VD S L D R IV E R 200 RG D .U .T IA S + - VD D A VGS 20V tp 0 .0 1 Ω 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting T , Junction Temperature ( ° C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHY7130CM Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=1.45mH Peak IL = 14.4A, VGS =12V ➂ ISD ≤ 14.4A, di/dt ≤ 395A/µs, VDD ≤ 100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-257AA A 10.66 [.420] 10.42 [.410] 3X Ø 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035] 13.63 [.537] 13.39 [.527] 16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] 1 2 3 B C 15.88 [.625] 12.70 [.500] 0.71 [.028] MAX. 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] CA B 3.05 [.120] Ø 0.50 [.020] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. PIN AS S IGNMENTS 1 = DRAIN 2 = S OURCE 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01 8 www.irf.com