IRHY7230CM

PD - 91273C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.40Ω 0.40Ω 0.40Ω 0.40Ω IRHY7230CM JANSR2N7381 200V, N-CHANNEL REF:MIL-PRF-19500/614 RAD-Hard HEXFET TECHNOLOGY ™ ® ID QPL Part Number 9.4A JANSR2N7381 9.4A JANSF227381 9.4A JANSG2N7381 9.4A JANSH2N7381 TO-257AA International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET® Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 9.4 6.0 37 75 0.6 ±20 150 5.5 7.5 16 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 ( 0.063 in.(1.6mm) from case for 10s) 7.0 (Typical ) g www.irf.com 1 12/17/01 IRHY7230CM Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — — 2.0 2.5 — — — — — — — — — — — — Typ Max Units — 0.23 — — — — — — — — — — — — — — — 7.0 — — 0.40 0.49 4.0 — 25 250 100 -100 50 10 25 35 75 70 60 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID =6.0A ➃ VGS = 12V, ID = 9.4A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 6.0A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =9.4A VDS = 100V VDD = 100V, ID =9.4A VGS =12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 250 63 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 9.4 37 1.4 460 2.4 Test Conditions A V nS µC Tj = 25°C, IS = 9.4A, VGS = 0V ➃ Tj = 25°C, IF = 9.4A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 1.67 80 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHY7230CM International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-257AA) Diode Forward Voltage ➃ 100 K Rads(Si)1 300 - 1000K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID =6.0A VGS = 12V, ID =6.0A VGS = 0V, IS = 9.4A Min 200 2.0 — — — — — — Max — 4.0 100 -100 25 0.40 0.40 1.4 Min 200 1.25 — — — — — — Max — 4.5 100 -100 25 0.53 0.53 1.4 1. Part number IRHY7230CM (JANSR2N7381) 2. Part numbers IRHY3230CM, IRHY4230CM, and IRHY8230CM (JANSF2N7381, JANSG2N7381 and JANSH2N7381) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) 28 36.8 Energy (MeV) 285 305 Range (µm) @VGS=0V Cu Br 43 39 190 100 180 100 VDS(V) @VGS=-5V @VGS=-10V @VGS=-15V 170 100 125 50 @VGS=-20V — — 200 150 VDS 100 50 0 0 -5 -10 VGS -15 -20 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHY7230CM Pre-Irradiation 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A)  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 10 5.0V 5.0V 1 1 20µs PULSE WIDTH  T = 25 C J ° 10 100 1 1 20µs PULSE WIDTH  T = 150 C J ° 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID  = 9.4A I D , Drain-to-Source Current (A) TJ = 25 ° C  TJ = 150 ° C  10 2.0 1.5 1.0 0.5 1 5 6 7 8  V DS = 50V 20µs PULSE WIDTH 10 11 9 12 0.0 -60 -40 -20 VGS = 12V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHY7230CM 2000 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1500  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID  = 9.4A 16 C iss   VDS = 160V VDS = 100V VDS = 40V 12 1000 C oss 500 8 C rss 0 1 10 100 4 0 0 10 20 FOR TEST CIRCUIT  SEE FIGURE 13 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on) 10 I D , Drain Current (A) 100 TJ = 150 ° C  TJ = 25 ° C   10us 10  100us  1ms 1 1  10ms 0.1 0.2 V GS = 0 V  0.6 1.0 1.4 1.8 2.2 0.1  TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 -VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHY7230CM Pre-Irradiation 10 VDS 8 RD VGS RG D.U.T. + I D , Drain Current (A) -VDD 6 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHY7230CM 400 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 300  ID 4.2A 5.9A BOTTOM 9.4A TOP VD S L D R IV E R RG D .U .T IA S + - VD D 200 A VGS 20V tp 0 .0 1 Ω 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHY7230CM Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L=3.40mH Peak IL = 9.4A, VGS =12V ➂ ISD ≤ 9.4A, di/dt ≤ 660A/µs, VDD ≤ 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-257AA A 10.66 [.420] 10.42 [.410] 3X Ø 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035] 13.63 [.537] 13.39 [.527] 16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] 1 2 3 B C 15.88 [.625] 12.70 [.500] 0.71 [.028] MAX. 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] CA B PIN AS S IGNMENT S 3.05 [.120] Ø 0.50 [.020] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. 1 = DRAIN 2 = S OURCE 3 = GAT E IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01 8 www.irf.com