IRHYB593034CM

PD-97000 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level RDS(on) IRHYB597034CM 100K Rads (Si) 0.087 Ω IRHYB593034CM 300K Rads (Si) 0.087 Ω ID -20A -20A IRHYB597034CM 60V, P-CHANNEL 5 TECHNOLOGY ™ Low-Ohmic TO-257AA (Tab-less) International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -20 -13 -80 75 0.6 ±20 134 -20 7.5 -4.9 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063in./1.6mm from case for 10s) 3.7 ( Typical ) g www.irf.com 1 05/17/05 IRHYB597034CM Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Min -60 Typ Max Units — -0.066 — — — — — — — — — — — — — — 6.8 — — 0.087 -4.0 — -10 -25 -100 100 45 18 13 25 65 75 50 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -13A à VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -13A à VDS= -48V ,VGS = 0V VDS = -48V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = -20A VDS = -30V VDD = -30V, ID = -20A VGS = -12V, RG = 7.5Ω ∆ BVDSS /∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 10 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 1560 565 62 6.5 — — — — pF Ω Measured from Drain lead (6mm / 0.25in. from package) to Source lead (6mm /0.25in. from package) VGS = 0V, VDS = - 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -20 -80 -5.0 100 200 Test Conditions A V ns nC Tj = 25°C, IS = -20A, VGS = 0V à Tj = 25°C, IF =-20A, di/dt ≤ -100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 1.67 80 °C/W Test Conditions Typical Socket Mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHYB597034CM International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) à Static Drain-to-Source On-State Resistance(Low-OhmicTO-257AA) Diode Forward Voltage à 100K Rads(Si)1 Min Max -60 -2.0 — — — — — — — -4.0 -100 100 -10 0.087 0.087 -5.0 300KRads(Si)2 Min Max -60 -2.0 — — — — — — — -4.0 -100 100 -10 0.087 0.087 -5.0 Units V nA Test Conditions VGS = 0V, ID = -1.0mA V GS = VDS , ID = -1.0mA VGS =-20V V GS = 20 V VDS = -48V, VGS =0V VGS = -12V, ID =-13A VGS = -12V, ID =-13A VGS = 0V, IS = -20A µA Ω Ω V 1. Part number IRHYB597034CM 2. Part number IRHYB593034CM International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 Energy (MeV) 252.6 314 350 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 33.1 - 60 - 60 - 60 - 60 - 60 30.5 - 60 - 60 - 60 - 45 - 25 28.4 - 60 - 60 - 60 — — -70 -60 -50 -40 -30 -20 -10 0 0 5 10 VGS 15 20 Br I Au For footnotes refer to the last page www.irf.com VDS Fig a. Single Event Effect, Safe Operating Area 3 IRHYB597034CM Pre-Irradiation 100 100 -I D, Drain-to-Source Current (A) VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D, Drain-to-Source Current (A) VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 10 -5.0V 10 -5.0V 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -20A 1.5 -I D, Drain-to-Source Current (A) TJ = 150°C 1.0 T J = 25°C 0.5 VDS = -25V 15 60µs PULSE WIDTH 10 5 5.5 6 6.5 7 7.5 8 8.5 9 -VGS, Gate-to-Source Voltage (V) VGS = -12V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHYB597034CM 2500 -VGS, Gate-to-Source Voltage (V) 2000 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = -20A 16 VDS= -48V VDS= -30V VDS= -12V C, Capacitance (pF) 1500 Ciss 12 1000 Coss 8 500 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 50 60 Crss 0 1 10 100 -VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 T J = 150°C T J = 25°C 1000 -I D, Drain-to-Source Current (A) -I SD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 1 00µs 10 1 1ms Tc = 25°C Tj = 150°C Single Pulse 1 10 VGS = 0V 0.1 0 1 2 3 4 5 6 -V SD , Source-to-Drain Voltage (V) 10ms 100 1000 1 -V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHYB597034CM Pre-Irradiation 20 V GS RG V GS V DS RD 16 -I D, Drain Current (A) D.U.T. + 12 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 T C , Case Temperature (°C) 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - V DD Pre-Irradiation IRHYB597034CM VDS L 250 EAS , Single Pulse Avalanche Energy (mJ) RG D.U.T IAS + DRIVER V DD VDD A 200 VGS -20V tp 0.01Ω ID -8.9A -12.6A BOTTOM -20A TOP 150 15V 100 Fig 12a. Unclamped Inductive Test Circuit I AS 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - -12 V -12V 12V .2µF .3µF QGS QGD VDS 7 IRHYB597034CM Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -25V, starting TJ = 25°C, L=0.67mH Peak IL =- 20A, VGS = -12V  ISD ≤ - 20A, di/dt ≤ -370A/µs, VDD ≤ - 60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — Low-Ohmic TO-257AA (Tab-less) A 10.66 [.420] 10.42 [.410] 5.08 [.200] 4.83 [.190] 10.92 [.430] 10.42 [.410] 1 2 3 B C 15.88 [.625] 12.70 [.500] 0.71 [.028] MAX. 0.13 [.005] 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] BA 3.05 [.120] Ø 0.50 [.020] NOT ES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. T O-257AA TABLES S IS A MODIFIED JE DEC OUTLINE T O-257AA. LEAD ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2005 8 www.irf.com