IRHYK57133CMSE

PD - 96898 R ADIATION HARDENED IRHYK57133CMSE POWER MOSFET 130V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-257AA) 5 TECHNOLOGY  ™ ™ Product Summary Part Number Radiation Level IRHYK57133CMSE 100K Rads (Si) RDS(on) 0.082 Ω ID 20A Low-Ohmic TO-257AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID@ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pack. Mounting Surface Temp. Weight For footnotes refer to the last page 20 12.5 80 75 0.6 ±20 73 20 7.5 11.3 -55 to 150 300 (for 5s) 3.7 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 10/28/04 IRHYK57133CMSE Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS / ∆ TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 130 — — 2.5 7.4 — — — — — — — — — — — — Typ Max Units — 0.09 — — — — — — — — — — — — — — 6.8 — — 0.082 4.5 — 10 25 100 -100 48 16 18 20 100 35 40 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 12.5A à V DS = VGS, ID = 1.0mA VDS = 15V, IDS = 12.5A à VDS = 104V ,VGS=0V VDS = 104V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 20A VDS = 65V VDD = 65V, ID = 20A VGS =12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 1020 285 10 0.77 — — — — pF Ω Measured from Drain lead (6mm / 0.25in. from package) to Source lead (6mm /0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 20 80 1.2 200 1.5 Test Conditions A V ns µC Tj = 25°C, IS = 20A, VGS = 0V à Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 1.67 80 Units °C/W Test Conditions Typical Socket Mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHYK57133CMSE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Source On-State„ Resistance (Low-Ohmic TO-257) Diode Forward Voltage „ Min 130 2.0 — — — — — — 100K Rads (Si) Max — 4.5 100 -100 10 0.082 0.082 1.2 Units V nA µA Ω Ω V Test Conditions ˆ VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20V VDS = 104V, VGS= 0V VGS = 12V, ID = 12.5A VGS = 12V, ID = 12.5A VGS = 0V, ID = 20A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 130 130 130 130 130 32.5 130 130 130 100 50 28.4 130 120 30 — — 150 120 VDS 90 60 30 0 0 -5 -10 VGS -15 -20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHYK57133CMSE Pre-Irradiation 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 1 1 5.0V 0.1 5.0V 60µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C 1 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 20A 2.5 ID, Drain-to-Source Current (A) 2.0 1.5 1.0 0.1 VDS = 50V 15 60µs PULSE WIDTH 5 6 7 8 9 10 11 12 13 0.5 VGS = 12V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.01 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHYK57133CMSE 2400 2000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 20A 16 VDS = 104V VDS = 65V VDS = 26V C, Capacitance (pF) 1600 12 1200 Ciss Coss 8 800 400 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 5 10 15 20 25 30 35 40 Crss 0 1 10 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 150°C T J = 25°C 10 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100µs 1ms Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1 VGS = 0V 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD , Source-to-Drain Voltage (V) 10ms 0.1 1000 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHYK57133CMSE Pre-Irradiation 20 VGS VDS RD ID, Drain Current (A) 15 RG VGS D.U.T. + -V DD 10 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 10% VGS td(on) tr t d(off) tf T C , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHYK57133CMSE 140 EAS , Single Pulse Avalanche Energy (mJ) 15V 120 100 80 60 40 20 0 25 50 75 VDS L DRIVER ID 8.9A 12.6A BOTTOM 20A TOP RG D.U.T. IAS tp + - VDD VGS 20V A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 100 125 150 V(BR)DSS tp Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHYK57133CMSE Pre-Irradiation à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L= 0.36 mH Peak IL = 20A, VGS = 12V  ISD ≤ 20A, di/dt ≤ 690A/ µs, VDD ≤ 130V, TJ ≤ 150°C 12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 104 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — Low Ohmic TO-257AA 0.13 [.005] A 10.66 [.420] 10.42 [.410] 5.08 [.200] 4.83 [.190] C 1 2 3 10.92 [.430] 10.42 [.410] B 15.49 [.610] 14.73 [.580] 0.889 [.035] MAX. 2.54 [.100] 2X 3X 0.88 [.035] 0.64 [.025] BA 2.79 [.110] 2.29 [.090] 3.17 [.125] 2.92 [.115] 0.25 [.010] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/2004 8 www.irf.com