IRHYS63230CM

PD-96925B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω IRHYS63230CM 300K Rads (Si) 0.13Ω ID 16A 16A IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY International Rectifier’s R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Low-Ohmic TO-257AA Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 16 10 64 75 0.6 ±20 83 16 7.5 9.0 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g 300 (0.063 in. /1.6 mm from case for 10s) 4.3 (Typical) www.irf.com 1 01/19/07 IRHYS67230CM Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — 2.0 11 — — — — — — — — — — — — Typ Max Units — 0.19 — — — — — — — — — — — — — — 6.8 — — 0.13 4.0 — 10 25 100 -100 42 10 20 15 40 35 15 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 10A à VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 10A à VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 16A VDS = 100V VDD = 100V, ID = 16A VGS =12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 1660 206 2.6 1.75 — — — — Measured from Drain lead (6mm / 0.25in. from package) to Source lead (6mm /0.25in. from package) VGS = 0V, VDS = 25V pF f = 1.0MHz Ω f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 16 64 1.2 300 3.2 Test Conditions A V ns µC Tj = 25°C, IS = 16A, VGS = 0V à Tj = 25°C, IF = 16A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 1.67 80 °C/W Test Conditions Typical Socket Mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHYS67230CM International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Source On-State „ Resistance (Low Ohmic TO-257) Diode Forward Voltage „ Up to 300K Rads (Si)1 Min 200 2.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS=160V, VGS=0V VGS = 12V, ID = 10A VGS = 12V, ID = 10A VGS = 0V, ID = 16A — 4.0 100 -100 10 0.134 0.13 1.2 1. Part numbers IRHYS67230CM and IRHYS63230CM International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Xe Xe Au LET (MeV/(mg/cm )) 43 59 90 2 Energy (MeV) 2441 825 1480 Range (µm) 205 66 80 @VGS= 0V VDS (V) @VGS= -5V @VGS= -10V @VGS= -15V 200 200 170 200 200 170 200 200 -- 190 190 -- 240 200 160 120 80 40 0 0 -5 -10 VGS -15 -20 Xe - LET=43 Xe - LET=59 Au - LET=90 VDS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHYS67230CM Pre-Irradiation 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 5.0V 5.0V 1 1 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 ID, Drain-to-Source Current (A) T J = 150°C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 16A 2.0 10 T J = 25°C 1.5 1.0 0.5 1 2 4 6 8 VDS = 50V 15 60µs PULSE WIDTH 10 12 14 16 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHYS67230CM 3000 2400 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 100KHz 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 16A 16 VDS = 160V 6 VDS = 100V VDS = 40V C, Capacitance (pF) 1800 Ciss Coss 12 1200 8 600 Crss 4 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 10 20 30 40 50 60 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 10 T J = 150°C ID, Drain-to-Source Current (A) 100 10 T J = 25°C 100µs 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1.0 1ms 10ms 1000 0.1 0.2 0.4 0.6 0.8 VGS = 0V 1.0 1.2 0.1 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHYS67230CM Pre-Irradiation 16 VDS VGS RD ID , Drain Current (A) 12 RG VGS D.U.T. + -V DD 8 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHYS67230CM 160 EAS , Single Pulse Avalanche Energy (mJ) 15V 120 ID 7.0A 10A BOTTOM 16A TOP VDS L DRIVER RG D.U.T. IAS tp 80 + - VDD A VGS 20V 0.01Ω 40 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V(BR)DSS tp Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHYS67230CM Pre-Irradiation à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. Å Total Dose Irradiation with VDS Bias. Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 0.65mH Peak IL = 16A, VGS = 12V  ISD ≤ 16A, di/dt ≤ 750A/µs, VDD ≤ 200V, TJ ≤ 150°C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — Low-Ohmic TO-257AA A 10.66 [.420] 10.42 [.410] 3X Ø 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035] 13.63 [.537] 13.39 [.527] 1 2 3 16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] B C 15.88 [.625] 12.70 [.500] 0.71 [.028] MAX. 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] CA B 3.05 [.120] Ø 0.50 [.020] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. LEAD ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2007 8 www.irf.com